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   各向同性刻蚀 的翻译结果: 查询用时:0.509秒
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各向同性刻蚀
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  isotropic etching
     The fabricating of the micro-needle point adopts isotropic etching technology and the fabricating of the micro-needle hole adopts the deep etching technology. It gives the detailed theory explanation and the study with the experiment to the two kinds of fabricate technologies in the article.
     其中微针尖的加工采用各向同性刻蚀技术,微针孔的加工采用各向异性深度刻蚀技术,文中对这两种微加工技术做了详细的理论阐述和实验研究。
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  “各向同性刻蚀”译为未确定词的双语例句
     Two step RIE process on polysilicon doped phosphorus by three type gases mixed, such as CF4,SF6,Cl2CF, are studied in the paper.
     采用两步刻蚀工艺,SF6,CF4,Cl2CF三种气体组合,从原来45度的各向同性刻蚀提高到73度以上的各向异性刻蚀。
短句来源
     Simulated results illustrate that the ratio of isotropic component to anisotropic component affects the etching profile significantly and the ion angle distribution of incidence modulates the etching profile as well.
     模拟结果表明:刻蚀过程中的各向同性刻蚀和各向异性刻蚀作用的比例对刻蚀剖面形状影响挺大,离子束发散角的大小对刻蚀剖面也有较大影响。
短句来源
  相似匹配句对
     Ion Beam Etching
     离子束刻蚀
短句来源
     Plasma Etching
     等离子体刻蚀
短句来源
     ON ISOTROPY OF ROBOT'S FORCE SENSORS
     机器人力传感器的各向同性
短句来源
     THERMAL PROPERTY OF CARBON FIBER ISOTROPIC PITCH
     各向同性沥青的热性能
短句来源
     When remains the DC power,the decreasing of gas pressure can lead to the increasing of etching rate and the transformation from isotropic etching to anisotropic etching.
     在直流功率一定时,工作气压的降低会导致刻蚀速率的增加,并且刻蚀各向同性转变为各向异性。
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  isotropic etching
The isotropic etching of SiO2 with an SF6-O2 plasma is studied experimentally.
      
For the structuring of these materials with nearly arbitrary shapes only standard lithography and isotropic etching is needed.
      
Long annealing steps at high temperatures did not show any improvement, but smoothening the powder blasted channel walls by isotropic etching did.
      
The isotropic etching profile of the glass master was utilized for microlens replication.
      
The simulation shows that multistep isotropic etching can yield buried cavities with a narrow opening as well as large aspect ratio cavities.
      
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(100) Si is etched by using CF4, SF6, NF3 and C7F14 etchant in reactive ionetching (RIE) and plasma etching (PE) systems respectively. The experiments havethat anisotropy and uniformity are better in RIE than those in PE. Anisotropy is obvise-ly related to etchant gas composition and pressure,when 20% Ar is added to SF6, theanisotropy of 5. 4 is given. In addition to 20%C2F5Cl in SF6,anisotropy is above 10. Uni-formity of CF4 and NF3 is better than that of SF6. Uniformity of 5% has been gained inRIE. Plasma...

(100) Si is etched by using CF4, SF6, NF3 and C7F14 etchant in reactive ionetching (RIE) and plasma etching (PE) systems respectively. The experiments havethat anisotropy and uniformity are better in RIE than those in PE. Anisotropy is obvise-ly related to etchant gas composition and pressure,when 20% Ar is added to SF6, theanisotropy of 5. 4 is given. In addition to 20%C2F5Cl in SF6,anisotropy is above 10. Uni-formity of CF4 and NF3 is better than that of SF6. Uniformity of 5% has been gained inRIE. Plasma etching silicon is isotropic and its uniformity is about 16. 5%. Etch unifor-mity has not obvisely relation to addititonal gas compsition. A discussion of anisotropyand uniformity and their relation to process parameters is included.

在反应离子刻蚀(RIE)及等离子体刻蚀(PE)设备中,分别采用CF_4,SF_6,NF_3和C_7F_(14),腐蚀剂气体,对(100)Si进行刻蚀.研究了工艺条件对刻蚀各向异性及均匀性的影响.结果表明,RIE的各向异性与均匀性均优于PE.RIE的各向异性值A与刻蚀气体中的添加剂成份有关,添加20%Ar时A最大值为5.4;添加20%C_2F_5Cl时,A值可高达10以上.在RIE中,CF_4和NF_3,的刻蚀均匀性优于SF_6,最佳刻蚀均匀性平均值优于5%,添加剂对刻蚀均匀性没有明显的影响.而PE显示各向同性的刻蚀特征,均匀性约为16.5%.并对各向异性及均匀性的起因作了解释.

One of a key process of the microelectromechanical system is to form high aspect ratio of pattern. Two step RIE process on polysilicon doped phosphorus by three type gases mixed, such as CF4,SF6,Cl2CF, are studied in the paper. The aspect ratio is improved from 45 degree to 73 degree,etch rate is 200nm per minute. It takes about 20 minutes for 3.5 μ m polysilicon doped phosphorus at 390W of RF power.

微电子机械系统中关键工艺之一就是刻蚀出高深宽比的图形。本文对掺磷多晶硅反应离子刻蚀(RIE)进行了研究。采用两步刻蚀工艺,SF6,CF4,Cl2CF三种气体组合,从原来45度的各向同性刻蚀提高到73度以上的各向异性刻蚀。射频功率390瓦时,刻蚀速率每分钟200nm。对3.5微米厚的多晶硅,刻蚀时间在20分钟左右,基本上达到要求。

Although modern biotechnology has produced extremely sophisticated and potent drugs, many of these compounds can not be effectively delivered by convention drug delivery techniques (e.g., pills and injections). Transdermal delivery is an attractive alternative, but it is limited by the extremely low permeability of skin. As the primary barrier of drug delivery is the upper skin in the thickness about 120μm and the nerves is distributed in the tissue about 200μm under the upper skin, the arrays of microneedles...

Although modern biotechnology has produced extremely sophisticated and potent drugs, many of these compounds can not be effectively delivered by convention drug delivery techniques (e.g., pills and injections). Transdermal delivery is an attractive alternative, but it is limited by the extremely low permeability of skin. As the primary barrier of drug delivery is the upper skin in the thickness about 120μm and the nerves is distributed in the tissue about 200μm under the upper skin, the arrays of microneedles can be used to penetrate through the upper skin without stimulating the nerves. Therefore, the key technique of this drug delivery method is the fabrications of the of microneedle arrays. The silicon fabrica- tion processing based on the combination of isotropic and anisotropic etching is discussed.

尽管现代生物技术制造出了许多新型的合成药物,但是利用目前的给药方式(比如口服或肌肉注射),不能将这些药物有效的输入人体。透皮给药是解决这个问题的一个有效途径,但由于人体皮肤的渗透性很差,使透皮给药方式的应用受到限制。透皮给药的最大障碍是皮肤表层12μm厚的角质层,而神经处在更深层的组织中,因此利用硅微加工技术制作了一种微针阵列,既可以穿透皮肤的角质层,又不触及到深层组织中的神经,从而形成一种渗透性好且无任何痛苦的新型透皮给药方式,这种给药方式的关键技术是微针阵列的加工,着重讨论硅材料微针阵列加工的各向同性刻蚀和各向异性刻蚀两种工艺。

 
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