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纳米磨料
相关语句
  nano-sized abrasives
     Effect of hardness of nano-sized abrasives on roughness of polished super-smooth surface
     纳米磨料硬度对超光滑表面抛光粗糙度的影响
短句来源
     Study on the Polishing of GaAs Wafer Using Nano-sized Abrasives
     纳米磨料对GaAs晶片的抛光研究
短句来源
     The effect of the hardness of nano-sized abrasives on the roughness of polished surface was discussed.
     分析了纳米磨料自身变形量对磨料嵌入硅晶片基体材料的深度的影响,以及纳米磨料硬度对抛光表面粗糙度的影响。
短句来源
  nanometer abrasive
     A Study of CMP Nanometer Abrasive Preparation Technology
     ULSI中CMP纳米磨料制备技术的研究
短句来源
  “纳米磨料”译为未确定词的双语例句
     the deformation of the abrasive counteract part of the cutting depth which determines the roughness of the polished surface;
     纳米磨料的自身变形抵消了纳米磨料嵌入基体材料的切削深度,从而也决定了抛光表面的粗糙度;
短句来源
     Various size of nanoparticles had the different polishing effect,of which the 8 nm particles exhibited the best polishing effect with the lowest surface roughness 0.740 nm,and those smaller or bigger than such size got higher surface roughness.
     结果表明,不同尺寸的纳米磨料具有不同的抛光效果,采用粒度8 nm的CeO2磨料抛光后微观表面粗糙度最低(0.740 nm),采用粒度小于或大于8 nm的CeO2磨料抛光后其表面粗糙度值均较高.
短句来源
     STUDY ON THE PREPARATION OF GRANITE POLISHING TOOLS WITH NANOSIZED ABRASIVE GRITS
     纳米磨料制备花岗石抛光磨具的研究
短句来源
     Study on Ultra-Precision Polishing of Silicon Wafer by Nanosized Abrasives
     纳米磨料对硅晶片的超精密抛光研究
短句来源
     Granite polishing tools were prepared with nanomaterials(mixture of nano Al 2O 3 and nano SnO 2) as abrasive grits, phenolic resin as binder, pre pressed at 160℃ and 8MPa and then hardened in the hardening oven.
     以纳米三氧化二铝和纳米二氧化锡等作为复合纳米磨料 ,以酚醛树脂为粘结剂在 160℃和 8MPa的条件下预压 ,然后在硬化炉里硬化制备花岗石抛光磨具。
短句来源
更多       
  相似匹配句对
     STUDY ON THE PREPARATION OF GRANITE POLISHING TOOLS WITH NANOSIZED ABRASIVE GRITS
     纳米磨料制备花岗石抛光磨具的研究
短句来源
     Study on the Polishing of GaAs Wafer Using Nano-sized Abrasives
     纳米磨料对GaAs晶片的抛光研究
短句来源
     Nano-foam plastics
     纳米泡沫塑料
短句来源
     Nanobiotechnology
     纳米生物技术
短句来源
     Development of Abrasive Tools
     磨料磨具的发展
短句来源
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Granite polishing tools were prepared with nanomaterials(mixture of nano Al 2O 3 and nano SnO 2) as abrasive grits, phenolic resin as binder, pre pressed at 160℃ and 8MPa and then hardened in the hardening oven. The polishing experiment showed that the characteristics of nano abrasives granite polishing tools such as grinding performance, erosion resistance and water impermeability are higher than that of the conventional granite polishing tools. The polishing finish can attain to 98 0.

以纳米三氧化二铝和纳米二氧化锡等作为复合纳米磨料 ,以酚醛树脂为粘结剂在 160℃和 8MPa的条件下预压 ,然后在硬化炉里硬化制备花岗石抛光磨具。磨削对比试验表明 :纳米磨料花岗石抛光磨具的磨削性能、耐磨性能、耐水性能均优于普通磨料花岗石抛光磨具 ,前者的抛光光洁度达 98度

Nano-powder of CeO_2 was prepared by homogenous precipitation and was compounded into polishing slurry

通过均相沉淀法制备了纳米CeO_2超细粉体,并配制成抛光液对硅片进行化学机械抛光(CMP),研究了纳米CeO_2磨料对硅片的抛光效果,通过建立的接触模型进一步地解释了纳米级磨料的化学机械抛光机理。实验结果分析表明:由于纳米磨料粒径小,切削深度小,材料是以塑性流动的方式去除。使用纳米CeO_2磨料最终在1μm的范围内达到了微观表面粗糙度Ra为0.103 nm的超光滑表面,而且表面的微观起伏更趋向于平缓。

Nanoscale powders of CeO_2 and Al_2O_3 were prepared via homogenous precipitation method. The polishing slurry for the chemical-mechanical-polishing of silicon wafer was prepared from the resulting nano-particulates, keeping the mass fraction of the nano-particulates therein as 1%. Thus the polishing tests with respect to the single crystal Si wafers in the presence of the polishing slurry containing the nano-particulates were carried out to investigate the polishing effect. The morphologies and surfaces roughness...

Nanoscale powders of CeO_2 and Al_2O_3 were prepared via homogenous precipitation method. The polishing slurry for the chemical-mechanical-polishing of silicon wafer was prepared from the resulting nano-particulates, keeping the mass fraction of the nano-particulates therein as 1%. Thus the polishing tests with respect to the single crystal Si wafers in the presence of the polishing slurry containing the nano-particulates were carried out to investigate the polishing effect. The morphologies and surfaces roughness of the polished Si wafers were observed and determined on an atomic force microscope. It was found that the nano-CeO_2 was superior to nano-Al_2O_3 in terms of the ability to reach ultra-precise polishing of the Si wafers, which could be related to the relatively smaller hardness of the former and its decreased damage to the polished Si wafer surface. It was feasible to realize ultra-precise polishing of the single crystal Si wafers making use of the polishing slurry doped with the nano-particulates, because in this case the cutting depth of the nano-sized abrasives was minimized, the removal of material was dominated by plastic flowage, and the polished surface quality and polishing efficiency could be assured.

采用均相沉淀法制备了纳米CeO2和纳米Al2O3超细粉体,将所制备的超细粉体配制成抛光液并用于硅晶片化学机械抛光,考察了纳米磨料对硅晶片抛光效果及抛光机理的影响.结果表明,纳米CeO2磨料的抛光效果优于纳米Al2O3磨料,采用纳米CeO2磨料抛光硅晶片时可以得到在1μm×1μm范围内微观表面粗糙度Ra为0.089nm的超光滑表面,且表面微观起伏较小.

 
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