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铜cmp
相关语句
  copper cmp
     Copper CMP Barrier Slurry System for 130 nm/ 90 nm New Process Development
     130nm/90nm新工艺开发用的铜CMP阻挡层浆料系统(英文)
短句来源
     Copper CMP Barrier Slurry System for 130nm/90nm New Process Development
     用于130nm/90nm新工艺开发的铜CMP阻挡层磨料系统(英文)
短句来源
     Technology Analysis on Copper CMP Slurry in ULSI Manufacturing
     ULSI制造中铜CMP抛光液的技术分析
短句来源
     To meet the requisition of copper CMP in ULSI, the experiment specialty, which are weak oxidant, strong complex and non-metal ions, achieved high CMP rate, appropriate non-contamination.
     根据多层布线铜CMP要求,采用弱氧化剂、强络合剂、非离子型的实验特点达到铜的CMP的高速率、合适的选择性、无污染的要求。
短句来源
     Therefore, a barrier slurry for copper CMP, in addition to exhibition a high removal rate of the barrier, must be able to remove the upper capping layer and stop at the underlying dielectric surface.
     因此,对于适合铜CMP的选择性浆料,除了具备的高去除率之外,须是在去除上面盖层后能够在下面的介质层表面上终止的浆料。
短句来源
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  cu cmp
     Gelatin of SiO_2 slurry and its elimination in Cu CMP
     铜CMP中SiO_2抛光液的凝胶及其消除实验
短句来源
     Experimental Study on Influences of Dispersant on Material Removal Rate and the Surface Roughness of Cu CMP
     分散剂对铜CMP材料去除率和表面粗糙度影响的实验研究
短句来源
     Advanced materials for STI, Cu CMP, and low-kdielectric were obtained.
     现已开发出了用于浅沟道隔离穴STI雪、铜CMP和低k介质的新型材料。
短句来源
  “铜cmp”译为未确定词的双语例句
     Influence of Process Parameters on Polishing Rate of Copper in Chemical Mechanical Polishing
     铜CMP中工艺参数对抛光速率的影响
短句来源
     The copper chemical mechanical polishing (CMP) which is the key planarization technology for ULSI manu- facturing wasdiscussed,and the progress and problems of CMP were reviewed in the paper.
     对ULSI制备中铜布线化学机械抛光(CMP)进行了分析,综述了铜CMP技术的研究现状.
短句来源
     Formation processes of passivation film were proved to accord with Muller model according to variation of apex current and apex potential with scan rate of potential by circle volt-ampere method of linear potential scan in various CMP recipe.
     发现了CMP过程中抛光速率R与腐蚀电流密度Icorr在一定条件下存在着线性关系,得出了定量的抛光速率方程,并提出了解释铜CMP过程机理的新模型—催化腐蚀模型。
短句来源
     High combination to copper ions avoids abrasive contamination and yields high CMP rate;
     保证了强络合,解决了颗粒沾污,提高了铜CMP速率;
短句来源
     The use of different barrier slurries for copper chemical mechanical planarization CMP creates a challenge for post-CMP cleaning.
     铜化学机械平面化不同阻挡层浆料的应用引起了铜CMP后清洗的问题。
短句来源
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  copper cmp
This approach may be useful for the application of single and first step copper CMP slurry with one package system.
      
In this work, we investigated the frictional behavior of copper CMP.
      
Discussions lead to three mechanisms during copper CMP.
      
During our project the two crucial defects of copper CMP technology, dishing of copper and over-polish of dielectric, have been investigated.
      
Electrical characterization of the copper CMP process and derivation of metal layout rules.
      
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  cu cmp
It was concluded that IO3- was an effective oxidant for Cu chemical mechanical polishing (CMP) with strongly acidic (pH >amp;lt; 3) slurries but it was not convenient reagent as an oxidant for Cu CMP with weakly acidic (pH >amp;gt; 3) slurries.
      
A novel in situ reflectance sensing technique detects the polishing uniformity and endpoint of the Cu CMP process.
      
A statistical analysis for in situ reflectance sensing tech nique in the Cu CMP process was developed.
      
Both analytical and experimental studies on the erosion in the Cu CMP process are presented in this paper and the following conclusions are drawn.
      
Both analytical and experimental studies on the erosion in the Cu CMP process are presented in this paper and the following conclusions can be drawn.
      
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A model for copper CMP in alkaline polish slurry is introduced in the paper.A lot of study on the best choice for the components of corresponding polish slurry,the global planarization,the selective,the control of polish rate,the stability and pureness of the polish slurry required by copper CMP have been made.

提出了在碱性浆料中 UL SI多层布线导体铜化学机械抛光的模型 ,对铜 CMP所需达到的平面化、选择性、抛光速率控制、浆料的稳定及洁净度、抛光液成分的优化选择进行了实验研究。

The technical of CMP of Cu in ULSI was systematically introduced, with the detailed analysis and summary of polishing mechanism, patterning of Cu for Multilevel metalliztion, types and components of slurry for CMP of Cu, and Cu dishing and SiO\-2 erosion. The questions existing and their solutions and directions of development were discussed.

作者对当前 ULSI多层布线中金属铜的 CMP技术作了系统的介绍 ,对抛光机理、多层布线中铜图案成型技术、浆料目前的种类及成分和表面完美性问题作了详细地分析和论述 ,并对目前存在问题及解决的方法和发展方向进行了讨论。

Advanced materials for STI, Cu CMP, and low-kdielectric were obtained. Technical nodes of 90 nm or later are requesting for less defectivity, improvement in topography reduction under soft touching CMP condition. The obtained new materials showed improvements in CMP performance and mechanical properties, so that they are considered to be compatible with future technical demands. The key solutions for the issues are large particle size control, new chemical for planarization and metal polishing control, and...

Advanced materials for STI, Cu CMP, and low-kdielectric were obtained. Technical nodes of 90 nm or later are requesting for less defectivity, improvement in topography reduction under soft touching CMP condition. The obtained new materials showed improvements in CMP performance and mechanical properties, so that they are considered to be compatible with future technical demands. The key solutions for the issues are large particle size control, new chemical for planarization and metal polishing control, and introducing controlled pores into SOG material.

现已开发出了用于浅沟道隔离穴STI雪、铜CMP和低k介质的新型材料。90nm以及下一代技术节点的新型器件要求在软接触CMP条件下减少缺陷率,改善片子表面形貌的衰减。获得的新材料展示了在CMP性能和街写特性方面的改进,因此这些材料被认为能够适应未来技术要求。这些材料的关键之处在于大颗粒尺寸的控制,进行平面化和金属抛光的化学控制以及将控制方法用于旋涂玻璃()材料。

 
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