助手标题  
全文文献 工具书 数字 学术定义 翻译助手 学术趋势 更多
查询帮助
意见反馈
   基本器件 的翻译结果: 查询用时:0.611秒
图标索引 在分类学科中查询
所有学科
计算机软件及计算机应用
更多类别查询

图标索引 历史查询
 

基本器件
相关语句
  basic device
     Firstly, SOI MOSFETS are simulated by SPICE software and BSIM3SOI model________________________ Abstract_________________________________to provide more data for the basic device of the circuit.
     首先,利用SPICE软件和BSIM3SOI器件模型对SOI MOSFET器件进行了模拟,分析了SOI MOSFET器件的特性和这些特性对电路的影响,为SOI电脉冲时间间隔测定器制作中基本器件——SOI MOSFET提供了设计依据。
短句来源
     As the size of the basic device MOSFET approaches its ultimate limit, a series of nano-electronic devices based on different physical mechanisms have been proposed for future generations.
     今天,当微电子的基本器件MOSFET缩小接近其终极时,作为下一代的基础,一批基于新的物理效应的纳电子器件又被提了出来.
短句来源
  “基本器件”译为未确定词的双语例句
     In the design of MEMS, the resolution model of every essential device, the accurate numeric analysis and calculation are required to achieve more precise and rational analyzed results.
     在MEMS器件设计中,综合各基本器件的精确分析结果,才能保证设计的合理性与准确性,这就需要建立器件的解析模型,并能够对其进行精确的数值分析与计算。
短句来源
     Fiber Bragg grating (FBG) is one of the most important fundamentalcomponents in optical communication and optical sensors system.
     光纤布喇格光栅(fiber Bragg grating,简称FBG)是光通信和光传感领域的重要基本器件之一。
短句来源
     Through solving a set of device equations,we simulate and then analyze the basic characteristics of NANO MOSFET.
     利用一组基本器件方程式 ,我们模拟并分析了NANO MOSFET的基本特性 .
短句来源
     In this paper, it is described about the basic structure and operation of the CCD(charge coupled device), and also investigated in the development of the studies on radiation effects on CCD. It is analyzed about the damage mechanism of ionization and displacement radiation on CCD, and showed the test results reported in references, such as dark current density , RTS and CTI, and also introduced the relative physics models.
     简要介绍了CCD的基本器件结构与工作机制,跟踪了国外CCD器件辐射效应方面的研究进展,分析了CCD器件电离效应和位移损伤机理,给出了国外在暗电流密度、RTS、电荷转移损失率等特征参数辐射效应的试验测试结果,以及相应的数学物理模型。
短句来源
     The PSPICE and Matlab simulation of the reconstruction and the basic cell such as multiplier and LPF are given. The results show that the continuous wavelet transform companding circuit proposed in the article is feasible.
     用PSPICE,Matlab对乘法器和滤波器等小波变换基本器件及小波重构进行仿真,表明所提出的连续小波变换压缩扩展电路可行。
短句来源
更多       
  相似匹配句对
     The fundamental properties of different device structures ars also discussed.
     并讨论了各种器件结构的基本性能.
短句来源
     The values calculated were in agreement with the results from the devices.
     计算与器件研制结果基本相符。
短句来源
     Protection Devices
     保护器件
短句来源
     basic principles;
     基本原理 ;
短句来源
     (2)essential features;
     基本特征;
短句来源
查询“基本器件”译词为用户自定义的双语例句

    我想查看译文中含有:的双语例句
例句
为了更好的帮助您理解掌握查询词或其译词在地道英语中的实际用法,我们为您准备了出自英文原文的大量英语例句,供您参考。
  basic device
The basic device is an M-i-n-GaN light-emitting diode structure.
      
The basic device is a resonant tunneling transistor (RTT) composed of a resonant tunneling diode monolithically integrated on the drain contact layer of a heterostructure field effect transistor.
      
The fundamental FPA performance limitations and possible FPA performance improvements are discussed in terms of basic device physics and material properties.
      
The basic device structure is an MBE-grown p-on-n heterojunction device.
      
A traditional analogue camera is a pretty basic device, with the simple task of accurately exposing a piece of film though a lens and shutter.
      
更多          


The construction,main units and materials requirements ofoptical processing and computing device are described.Materials that can becurrently used for this device are introduced.The trend of development ofsuch materials is reported so as to give a clue for researching new materialsfor optical processing and computing device.

本文概述了光计算机的构造和主要的基本器件,以及光处理器件对材料的要求,介绍了当前可用于光处理器件的各种材料与今后的发展方向,为光计算机器件材料的研究提供了探索方向。

The basic principle and the contritutions of various single-chipcircuits of auto-rotating three cutting torches. The basic elements of form-ing infinite rotating three cutting torches-rotating transformer is anal-ysed in detail. The advantages of three cutting torches are described.Itshows that it has reached the international level of the same products.

本文着重介绍了自动无限回转三割炬的工作原理及各单元电路的基本组成。对组成回转三割炬炬的基本器件——旋转变压器进行了较详细的分析。阐述了应用三割炬的优点。实践证明,已达到了同类产品的国际水平。

When device size being scaled down to deep submicron,it is requred to re-determine the position of LDD and conventional MOSFET in deep submicron VLSI because of the supply power scaling down.Based upon the principal device mathematic equations,two dimensional stable numerical simulation has been conducted to depict the device characteristics,hot carriers effect and short channel effect of LDD and conventional MOSFET in deep submicron region. The restrictions of deep submicron LDD in deep submicron VLSI fabrication...

When device size being scaled down to deep submicron,it is requred to re-determine the position of LDD and conventional MOSFET in deep submicron VLSI because of the supply power scaling down.Based upon the principal device mathematic equations,two dimensional stable numerical simulation has been conducted to depict the device characteristics,hot carriers effect and short channel effect of LDD and conventional MOSFET in deep submicron region. The restrictions of deep submicron LDD in deep submicron VLSI fabrication has also been assured.

对深亚微米器件,由于工作电压下降,要求重新确定LDD和常规MOSFET在VLSI中的作用.本文从基本器件数理方程出发,对深亚微米常规及LDDMOSFET的器件特性、热载流子效应及短沟道效应进行了二维稳态数值模拟,指出了常规和LDDMOSFET各自的局限性,明确了在深亚微米VLSI中,LDD仍然起主要作用。

 
<< 更多相关文摘    
图标索引 相关查询

 


 
CNKI小工具
在英文学术搜索中查有关基本器件的内容
在知识搜索中查有关基本器件的内容
在数字搜索中查有关基本器件的内容
在概念知识元中查有关基本器件的内容
在学术趋势中查有关基本器件的内容
 
 

CNKI主页设CNKI翻译助手为主页 | 收藏CNKI翻译助手 | 广告服务 | 英文学术搜索
版权图标  2008 CNKI-中国知网
京ICP证040431号 互联网出版许可证 新出网证(京)字008号
北京市公安局海淀分局 备案号:110 1081725
版权图标 2008中国知网(cnki) 中国学术期刊(光盘版)电子杂志社