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四元系材料
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  “四元系材料”译为未确定词的双语例句
     Graded heterojunction in AlGaInP compound semiconductors and its application to HB-LED
     AlGaInP四元系材料渐变异质结及其在高亮度发光二级管器件中的应用
短句来源
     A simple model of the graded heterojunction in ALGaInP compound semiconductors was introduced to analyze the energy band profile.
     引入渐变理论 ,通过建立AlGaInP四元系材料渐变异质结能带简单模型 ,分析在渐变长度相同、不同渐变方式下导带边的情况 .
短句来源
     The effect of the composition and calcining temperature on the microstructure and properties were studied。
     研究了成分及预烧温度对该四元系材料组织结构与性能的影响规律。
短句来源
     Optimum Al Composition Analysis on AlGalnP Quaternary Double Heterojunction Light-emitting Diodes
     A1GaInP四元系材料双异质结发光二极管的最佳Al组分分析
短句来源
     1. Depicting InGaAsP quantum well layer epitaxy material measurement and device fabrication technology. The material MOCVD epitaxy needs to regulate some parameters including V/III and interval.
     1.对InGaAsP量子阱材料生长、测试及器件制作工艺作了详细的说明,InGaAsP四元系材料的MOCVD高质量生长需要调整很多参数如Ⅴ/Ⅲ、中断时间等;
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     STUDY OF A FOUR-COMPONENT-SYSTEM PIEZOELECTRIC CERAMICS MATERIAL
     一种压电陶瓷材料的研究
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     Study on Piezoelectric Ceramics of PMMN-PZT
     PMMN-PZT压电陶瓷材料的研究
短句来源
     Thermal Stability of InGaAsP Quaternary Quantum Wells Materials
     InGaAsP量子阱材料的热稳定性
短句来源
     Study of the PMN-PZN-PZT Quaternary Piezoelectric Ceramic Materials
     PMN-PZN-PZT压电陶瓷材料的研究
短句来源
     Magnetic Properties of Super Magnetostrictive Materials of the Tb-Dy-Fe-M Quarternary Systems
     Tb-Dy-Fe-M 超磁致伸缩材料的磁性
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The PLMN-PZT piezoelectric ceramics have good piezoelectric properties and small dielectric loss compared with PLN-PZT and PMN-PZT ceramics.It is a good candidate material for piezoelectric ceramic transformer.Their piezoelectric and dielectric properties relate to the structure characters such as suitable tetragonality,moderate grain-size and Mn ions distributed on the grain boundary.

在PLN -PZT、PMN -PZT两个三元系基础上制备的PLMN -PZT四元系压电陶瓷综合了两个三元系材料的优点 ,既具有良好的压电性能又具有小的损耗 ,是一种优良的压电变压器材料。通过三个体系的比较 ,PLMN -PZT四元系材料适中的四方度、晶粒尺寸及晶界处锰的析出是它具有良好压电、介电性能的结构基础。

BAlGaN quaternaries were proposed for use as light emitting devices operating i n the ultraviolet spectral region. GaN and AlN binaries seem to be the basic material for the device applications of the quaternary. A 6H SiC substrate has an advantage in its small lattice mismatch to the nitride s and a thermal expansion coefficient of the SiC substrate is close to that of A lN. However, residual strain control of the AlN epitaxial layer is needed, becau se compressive strain, which was originated in the...

BAlGaN quaternaries were proposed for use as light emitting devices operating i n the ultraviolet spectral region. GaN and AlN binaries seem to be the basic material for the device applications of the quaternary. A 6H SiC substrate has an advantage in its small lattice mismatch to the nitride s and a thermal expansion coefficient of the SiC substrate is close to that of A lN. However, residual strain control of the AlN epitaxial layer is needed, becau se compressive strain, which was originated in the lattice mismatch to the subst rate, was included in the AlN epitaxial layer directly grown on the SiC substrat e. On the other hand, GaN epitaxial layer includes tensile strain, when the GaN is grown directly on the SiC substrate. The origin of the tensile strain is beli eved to be the larger thermal expansion coefficient of the GaN than that of the substrate. In this paper, effective control of the types and amount of the resid ual strain in the epitaxial layers are discussed for the 6H SiC substrate. For th is purpose, the (GaN/AlN) multi buffer structure is proposed as an effective too l for not only an AlN but also a GaN layer grown on the 6H SiC substrate. Also we discuss the relationship between the residual strain and the crystalline quality for an AlN and a GaN epitaxial layer.

人们已提出用BAlGaN四元系材料制备紫外光谱区的光发射器件。GaN和AlN二元系是这种四元材料在器件应用中的基础材料。 6H SiC衬底在氮化物生长中因其晶格失配小是一大优势 ,而且SiC衬底的热膨胀系数也和AlN的很接近。然而 ,对于AlN外延层来说 ,需要控制其中的残余应力 ,因为在SiC衬底上直接生长的AlN外延层中存在着因晶格失配所产生的压缩应力。另一方面 ,在SiC衬底上直接生长的GaN外延层中存在着拉伸应力。这种拉伸应力起源于GaN比衬底有着更大的热膨胀系数。本文讨论了在 6H SiC衬底上生长的氮化物外延层中残余应力的类型、数量及控制。为此目的 ,提出了在 6H SiC衬底上 ,无论是生长AlN ,还是生长GaN ,都可以采用 (GaN/AlN)多层缓冲层的办法 ,作为控制残余应力的有效方法。我们还讨论了AlN和GaN外延层的结晶质量和残余应力间的关系。

A simple model of the graded heterojunction in ALGaInP compound semiconductors was introduced to analyze the energy band profile.We analyze the energy band profiles with the different grading ways but the same grading length,under the different doping densities.We analyze the effect of the different grading lengths on the surplus of the spike potential to the potential of the n region under the different doping densities.We analyze the effect of the graded heterojunction,finding it can improve the HB-LED (high-brightness...

A simple model of the graded heterojunction in ALGaInP compound semiconductors was introduced to analyze the energy band profile.We analyze the energy band profiles with the different grading ways but the same grading length,under the different doping densities.We analyze the effect of the different grading lengths on the surplus of the spike potential to the potential of the n region under the different doping densities.We analyze the effect of the graded heterojunction,finding it can improve the HB-LED (high-brightness light emitting diode)performance,and proved by the experiment.A graded heterojunction should be applied to HB-LED,based on this analysis.

引入渐变理论 ,通过建立AlGaInP四元系材料渐变异质结能带简单模型 ,分析在渐变长度相同、不同渐变方式下导带边的情况 .分析不同掺杂浓度下 ,渐变区长度变化对势垒尖峰值和n区电势能之间差值的影响 .讨论了渐变方式引入高亮度发光二极管 (HB LED)器件的作用和意义

 
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