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   靶材利用率 的翻译结果: 查询用时:0.725秒
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靶材利用率     
相关语句
  target utilization
     IMPROVING TARGET UTILIZATION FORFLAT-PANEL-DISPLAY APPLICATIONS
     提高平板显示屏镀膜应用中的靶材利用率
短句来源
     Development of Cylindrical Rotating Magnetrons with High Target Utilization Rate
     高靶材利用率的新型磁控溅射器
短句来源
     In this paper it is introduced the newly developed ITO sputtering cathode α cathode by ULVAC. The α cathode with it's merits, for example high target utilization,low sp. voltage, high power high rate and no target cleaning etc. is now actively used in SDP series sputtering system for ITO deposition.
     本文介绍由日本真空技术株式会社开发的新型ITO膜溅射阴极——α阴极,同以往相比它具有诸如高靶材利用率、低溅射电压、高功率——高速率以及无需靶的清洗等优点,因此目前在SDP系列溅射设备中得到有效的利用
短句来源
  utilization factor of target
     A New Method to Increase the Utilization Factor of Target by DC Planar Magnetron Sputtering
     提高DC平面磁控溅射中靶材利用率的新方法
短句来源
  usage of target material
     This revolving target improved on the usage of target material and uniformity of film thickness comparing with conventional cylindric magnetron sputtering target.
     与常规的圆柱形磁控溅射靶相比较,该旋转式靶提高了靶材利用率和膜厚均匀度。
短句来源
  “靶材利用率”译为未确定词的双语例句
     DC planar magnetron sputtering processe is the most common technology to produce ITO glass, but the capacity utilization of target in the process with conventional fixed magnetron control is only 20% to 25%.
     直流平面磁控溅射法是生产ITO玻璃最常用的工艺,但是常规的固定磁控方法只有20%~25%的靶材利用率
短句来源
     The production should especially pay attention to such aspects as deposition rate, process stability as well as the utilization rate of target materials which need the optimized design of whole system and target design is the key.
     生产中需特别关注靶材利用率、沉积速率以及溅射过程稳定性等方面的问题,其根本在于整个系统的优化设计,靶设计则是其中的关键环节。
短句来源
     The experimental results show the utilization factor of the Zn target increases by factor of 3~4.
     该文介绍了一种采用稀硝酸对已被氧化的金属锌靶进行清洗的新方法,效果良好,靶材利用率提高3~4倍。
短句来源
     In this paper,the experiment and study on the cathode arc source of multiarc ion coater are described,the methods how to drop down the operation current of target, enhance the utilization of target material, decrease the size of the vapourized particle and enhance the film quality are given.
     本文叙述了对多弧离子镀膜机阴极弧源所做的实验研究,提出了如何降低靶极工作电流、提高靶材利用率、减小蒸发粒子的颗粒度以及提高成膜质量的方法。
短句来源
     To enhance the utilization, the fixed megnetic field was changed into an eccentrically rotated planar magneric field by which the utilization of target can be up to 60% to 70%. After two-year operation, it was proved that the change is very successful.
     为了尽可能提高靶材利用率,我们在原来的固定磁场基础上进行了偏心轴旋转的平面磁场改造,改造后的靶材利用率达到了60%~70%,经过两年多的运行,证明改造是相当成功的。
短句来源
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      target utilization
    A target utilization less than 100 helps the router prevent bu er over ows due to transient congestion e ects.
          
    If they increase target utilization threshold, the burst loss ratio is also increased.
          
    Linking these data to outcomes for the newborn can help refine target utilization strategies for C-section and VBAC.
          
    Our scheme uses a common target utilization level target for each i.
          
    Target utilization is a parameter which is set to a fraction based on current queuing delay.
          
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    In this paper,the experiment and study on the cathode arc source of multiarc ion coater are described,the methods how to drop down the operation current of target, enhance the utilization of target material, decrease the size of the vapourized particle and enhance the film quality are given.The process experiment and actual results on the TiN ultra-hard film and decorative film produced by multi-arc ion coater with 8 arc sources HLZ-750 mades in our institute are introduced in detail here.

    本文叙述了对多弧离子镀膜机阴极弧源所做的实验研究,提出了如何降低靶极工作电流、提高靶材利用率、减小蒸发粒子的颗粒度以及提高成膜质量的方法。详细介绍了在我所研制的HLZ-750型八个弧源的多弧离子镀膜机上所做的 TiN超硬涂层及装饰涂层的工艺研究及实测结果。

    In this paper it is introduced the newly developed ITO sputtering cathode α cathode by ULVAC.The α cathode with it's merits, for example high target utilization,low sp. voltage, high power high rate and no target cleaning etc.is now actively used in SDP series sputtering system for ITO deposition.

    本文介绍由日本真空技术株式会社开发的新型ITO膜溅射阴极——α阴极,同以往相比它具有诸如高靶材利用率、低溅射电压、高功率——高速率以及无需靶的清洗等优点,因此目前在SDP系列溅射设备中得到有效的利用

    The cladding processes used in gold targets and base plates are introduced. The rectangular and cylindrical magnetic controlled spttering pure gold and gold alloy targets are improved. The utilization ratio of gold targets raises to 70%~80%. The target making processes make great progress in vacuum gold ion sputtering technology.

    本文介绍了金靶材与阴极背板结合时所采用的镶嵌复合工艺,以及利用这种工艺对矩形或圆柱形磁控溅射靶进行金靶材形状的改进,最终可使金靶材的利用率提高到70%~80%。而且这种工艺也适用于金合金靶材与阴极背板的结合上,因此这一制靶工艺的开发,对真空离子镀金技术的进一步推广和应用具有十分重要的意义

     
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