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电路器件
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  circuit element
     The result shows that the quantum fluctuations of the voltage and current of each branch relate with parameter of the circuit element,and decay with time.
     结果表明,各支路电流电压的量子涨落均与电路器件的参数有关,且随时间衰减.
短句来源
     The result shows that the quantum fluctuations of the voltage and current of each branch relate with parameter of the circuit element,temperature,and decay according to exponent along with time.
     结果表明,各支路电流电压的量子涨落不仅与电路器件的参数有关,还与温度有关,而且随时间按指数规律衰减.
短句来源
     The result shows that the quantum fluctuations of the voltage and current of each branch are related with parameter of the circuit element, and also related with temperature and decayed with time.
     结果表明,各支路电流电压的量子涨落均与电路器件的参数以及温度有关.
短句来源
     The result shows that the quantum fluctuations of the voltage and current of each branch are related with parameter of the circuit element, and decay with time.
     结果表明,各支路电流电压的量子涨落均与电路器件的参数有关,且随时间衰减
短句来源
     The result shows that the quantum fluctuations of the voltage and current of each branch are related with parameter of the circuit element,and also related with temperature,and decay with time.
     结果表明,各支路电流电压的量子涨落均与电路器件的参数以及温度有关,且随时间衰减.
短句来源
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  circuit devices
     Modeling methods for circuit devices are discussed Physical model method and macromodel method are described Physical model of field transistors and macromodel of operational amplifiers are given
     探讨了电路器件的建模方法 ,主要讨论了物理模型和宏模型法 ,并给出了场效应管的物理模型和运算放大器的宏模型
短句来源
     According to the analysis of the key problem which influences the smelting speed of the intermediate frequency power, discuss to realize maximum output power of power suppy on the basis of automatic regulation reverse voltage time under the permissable condition of the power main circuit devices. This system achieves the goal to increase semlting speed of intermediate frequency power and gives the practical circuit.
     根据影响中频电源熔炼速度关键问题的分析,在电源主电路器件允许的条件下,通过负载变化自动调节反压时间,实现了电源输出功率最大,达到了提高中频电源熔炼速度的目的,并给出了实现电路。
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  “电路器件”译为未确定词的双语例句
     Amodgen: Constraints Based Device Generator for CMOS Analog Layout
     Amodgen:基于约束的CMOS模拟电路器件版图生成器
短句来源
     This paper analyses the randomness of the pseudo random codes, presents a novel wayto design pattern generators of error code testers in the 2Mb/s,8Mb/s and 34Mb/s digitaltransmission syster,and introduces has to seleect circuit components and test circuits.
     作者主要分析讨论了伪随机序列码的随机特性,介绍了2Mb/s、8Mb/s、34Mb/s数字传输系统误码测试仪中图案发生器的设计方法,同时还介绍了电路器件的选用和电路的检测方法等。
短句来源
     With the more and more widely application of high-speed electrical components, the signal integrity of high-speed circuit is emphasized by designers of electrical circuits.
     随着高频电路器件越来越广泛的应用,高频电路的信号完整性问题受到设计人员的关注。
短句来源
     Aim at the 2KW wind power generation system in the lab, the main circuit parts is selected.
     以2KW风力发电系统为例,选取了并网逆变器的主要电路器件
短句来源
     The transient responses of voltage regulator (VR) to sudden load changes and the parameters of a VR affecting the transient response of output voltage were analyzed to achieve a VR with fast transient responses.
     为设计具有快速动态响应的微处理器电源电压调节器,分析了在负载突变时电压调节器的瞬态响应特性和电路器件参数对输出电压瞬态响应影响.
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  circuit element
Physical Principles of Laser Simulation for the Transient Radiation Response of Semiconductor Structures, Active Circuit Element
      
Physical principles of laser simulation for the transient radiation response of semiconductor structures, active circuit element
      
The limiter comprises a seriesconnected dc circuit element immersed in liquid nitrogen.
      
It is shown that the properties of such a circuit element differ greatly from those of a conventional MIM diode.
      
Current can be transferred to the load of an inductive energy storage device by rapidly increasing the inductance of a circuit element connected in parallel with the load.
      
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  circuit devices
Coupling mode-based nanophotonic U-shaped circuit devices is proposed.
      
We propose a numerical simulation technique to model the process of diffusional creep and stress relaxation that occurs in Cu-damascene interconnects of integrated circuit devices in processing stage.
      
Thus these cells find potential use in rechargeable micropower sources and uninterrupted power supplies for microelectronic circuit devices.
      
Among integrated-circuit devices, magnetic bubbles are a particularly interesting candidate to implement the Fredkin gate and conservative logic.
      
Barium Strontium Titanate (BST) ferroelectric thick films have been investigated as potential candidates for use in frequency agile microwave circuit devices.
      
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In this paper, we present a concise device physics theory for I2L family. The core of the integrated injection logic family which includes I2L, I3L, S2L, SFL, SI2L and 3JL etc., is composed of three mutually interactive PN junctions.By making use of the'Total Number of Excess Minority Carriers"mothod, and starting from the integral form of the continuity equation, we shall relate the terminal current of I2L with the total mumber of excess carriers, which are functions of the junction voltages. The theory can...

In this paper, we present a concise device physics theory for I2L family. The core of the integrated injection logic family which includes I2L, I3L, S2L, SFL, SI2L and 3JL etc., is composed of three mutually interactive PN junctions.By making use of the'Total Number of Excess Minority Carriers"mothod, and starting from the integral form of the continuity equation, we shall relate the terminal current of I2L with the total mumber of excess carriers, which are functions of the junction voltages. The theory can be used to compute the recombination losses of various regions. The culculated results can be used to understand and to design the I2L family, and the parameters are also measurable from the circuit characteristic point of view.Taking the I2L LSI or VLSI as a single device, We can specify and measure the static input and output characteristics.It exhibits various regions of operation.For each of these various modes of operation, we can simplify the analysis, and obtain, with appropriate approximation, simple equivalent circuits, which can be used for CAD.The Eber-Moll and Gummel-Poon models are useful for junction transistors. However, these models are insufficient for three mutually interactive junctions. Especially for the dynamic behavior of I2L, it is necessary to consider the building up or decaying of the "Total Number of Excess Carriers" in the entire I2L. The charging and discharging currents are no more constants as that has been assumed in the "Charge control" theory. Simplified equations will be given for the dynamic analysis of I2L. This analysis provides useful basic principles for the device design theory and the circuit design theory.

本文叙述了注入型电路的器件物理。注入型电路包括I~2L、I~3L、S~2L、SFL、SI~2L以及3JL等,它们的核心是三个相互作用的PN结。 采用“过剩少数载流子总量”的方法,从电流连续方程的积分形式入手,给出了注入型电路端点电流与“过剩少数载流子总量”,以及端点电压之间的关系,由此可以计算出各区域的复合损失。计算结果可用来理解和设计注入型电路。从线路的角度来看,这些参数也可直接测得。 文中给出了可测的注入型大规模集成电路的静态输入和输出特性曲线族。这些特性曲线族包括了各种工作区。对于各种工作区域,可简化为简单的等效电路,用来进行线路和器件的设计,也可用于计算机辅助设计。 E-M和G-P模型对于描述结型晶体管是很完善的,但是不能充分描述三个结之间的相互作用。因此,特别是对于注入型电路的动态分析,还须考虑注入型电路各区域的“过剩少数载流子总量”的建立和消失过程,这时充、放电电流都已不是常数。本文给出了简化的动态分析方程,这些方程有助于器件和线路的设计。

LDCMOS is one of the power MOS devices,which has both high-frequency and high-voltage performances. It is also one of the widely used devices in HVIC(high voltage integrated circuits) and PIC (power integrated circuits). The high frequency and high voltage of the device are structurally characterized. And new techniques and design concepts are presented to improve the performances.

高频高压场效应晶体管(LDMOS)是功率MOS器件中同时具有高频高压性能的一种器件,也是目前广泛用于HVIC(高压集成电路)及PIC(功率集成)电路的器件之一。本文从结构上描述了器件的高频、高压特性,并提出了一些可提高这些性能的措施和设计思想。

The development trends of integrated circuits used in SPC telephone switching systems, system architecture, features and requirements of the switching systems are discussed.

本文对程控数字电话交换机所用的集成电路器件,交换机的系统结构以及性能要求的发展趋势进行了讨论。

 
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