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   硅片磨削 的翻译结果: 查询用时:0.568秒
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硅片磨削
相关语句
  wafer grinding
    Based on this, the overall structure of the test apparatus for silicon wafer grinding is designed.
    在此基础上,设计了硅片磨削试验台的整体结构;
短句来源
    A series of process experiments of wafer grinding are carried out on a VG401MKII grinding machine. The influence of the grit size and the process parameters, including the rotational speed of the cup grinding wheel, the down feed rate of the grinding wheel spindle and the rotational speed of the chuck table, on MRR, spindle motor current and roughness, areanalyzed. The grinding process parameters are proposed to improve grinding efficiency and surface quality on ground wafer.
    以VG401MKⅡ型超精密磨床为试验平台进行了磨削工艺试验,研究了磨削工艺参数、砂轮粒度对硅片磨削材料去除率、砂轮主轴电机驱动电流以及磨削后硅片表面粗糙度的影响,提出了提高磨削表面质量和加工效率的工艺措施。
短句来源
    In this paper, based on rotational coordinates method, a theoretical model of ground wafer shape in rotational grinding process is developed in which many critical factors including the parameters of a porous ceramic vacuum chuck dressing and silicon wafer grinding etc.
    本文综合考虑硅片夹持系统中真空吸盘修整参数以及硅片磨削参数等多种因素,建立了硅片自旋转磨削面型的理论模型;
短句来源
  “硅片磨削”译为未确定词的双语例句
    Through the model, computer simulation software about ground wafer shape is developed with VC++ 6.0 and OpenGL.
    并应用VC++6.0编程技术和OpenGL三维图形库开发了硅片磨削面型仿真软件,对真空吸盘修整面型以及硅片自旋转磨削面型进行了计算机仿真和预测;
短句来源
    The critical depth of cut for diamond grains in the grinding process with 3000# mesh diamond wheel was obtained as well.
    对硅片磨削过程的磨粒切削深度进行了分析,建立了硅片自旋转磨削方法的磨粒切削深度模型,并进行了实验验证; 建立了硅片自旋转磨削方法的砂轮临界切削深度模型。
短句来源
    Although many researchers study the machined wafer damage, the damage mechanism of the wafer rotational grinding is not yet perfectly understood. Therefore, the research regarding the surface layer damage in wafer rotation grinding has an important significance for realizing process of the wafer with high efficiency, precision, undamaged and ultra-smooth surface.
    目前,对硅片磨削表面层损伤机理的研究还不完善,深入研究硅片磨削表面层损伤机理对最终实现硅片的高效率、高精度、无损伤、超光滑表面的加工有着重要的指导意义。
短句来源
    The main research work is listed as follows:(1) Base on different damage forms, the wafer surface layer damage measurement methods are analyzed. Damage measurement methods and the implementation schemes are determined by doing abundant experiments.
    (1) 结合硅片加工表面层损伤形式,分析硅片加工表面层损伤的检测技术,通过大量试验确定硅片磨削加工表面层损伤检测技术与试验方案。
短句来源
    In the process of grinding, the grinding force is a key physical parameter, generally reflecting properties and state of material, and the characteristics of grinding wheel and abrasion state.
    在硅片磨削过程中,磨削力是综合反映工件材料性质和状况、砂轮特性和磨损状态、加工用量和工艺系统参数等因素的一个重要物理参量。
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  wafer grinding
Traditionally, silicon wafer grinding was the domain of IC manufactures for thinning the finished wafer to meet packaging height requirements.
      
Wafer processing 75-200mm Wafer Grinding When we bond wafer we have to go to the US to get them ground down.
      


Damaged layer was formed on the surface of silicon wafer during using ELID grinding technique to refine its surface roughness.the thickness and the structure of the damaged layer on the surface of two monocrystalline silicon wafers have been investigated by SACP technique.The results show that the thickness of the damaged layer on silicon wafers with surface roughness of 95nm and 227nm are 28μm and 48μm respectively.

利用扫描电镜的选区电子通道花样技术研究了用ELID磨削技术制作的两种单晶硅片磨削样品的表面变质层的厚度及其结构。结果表明,表面粗糙度依次为9.5nm和22.5nm两种〈111〉单晶硅片样品的变质层厚度分别为2.8μm和4.8μm。

The ultraprecision mirror surface grindingof silicon wafers has been carried out using the combination of ELID and cast iron fiber bonded diamond wheel(CIFB-D). The effect of grinding parameter on grinding efficiency and surface quality of silicon wafers is studied. The results of atomic force microscopy (AFM ) andscanning tunneling microscopy(STM) show that the disconnected and folding grinding trace on surface of siliconis formed by grinding process. The surface rougnnessproduced by ELID-grinding is about...

The ultraprecision mirror surface grindingof silicon wafers has been carried out using the combination of ELID and cast iron fiber bonded diamond wheel(CIFB-D). The effect of grinding parameter on grinding efficiency and surface quality of silicon wafers is studied. The results of atomic force microscopy (AFM ) andscanning tunneling microscopy(STM) show that the disconnected and folding grinding trace on surface of siliconis formed by grinding process. The surface rougnnessproduced by ELID-grinding is about 4.0nm in Ra withW1-CIFB-D. The flatness is approx. 1. 5μm. Thegrinding efficiency can reach 1. 07 ×10~3mm~3/min.

用铸铁短纤维结合剂金刚石砂轮与脉冲电解修整相配合,对硅片进行了在线电解修整(ELID)超精密磨削。研究了磨削工艺多数对硅片的加工质量及磨削效率的影响,采用原子力显微镜(AFM)与扫描电子隧道显微镜(STM)对硅片磨削表面进行了形貌分析,探讨其微观磨削机理。结果表明,砂轮中金刚石磨粒对硅片表面进行间歇式破碎,微观磨痕为Z字型;硅片表面粗糙度可达纳米级,R_a=4.0nm、R_z=7.8nm;整个硅片(3#)厚度变差为1.5μm;磨削硅片的变质层主要为原子面扭曲展及过渡层;磨削效率达1.07×10~3mm~3/min。

 
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