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器件失效
相关语句
  device failure
     Based on the characteristic of experimental data, this paper presents a method to evaluate the possibility distribution of electronic device failure applying the possibility theory.
     结合电子器件实验数据较少的情况,提出用可能性理论估计器件失效可能性分布的评估方法;
短句来源
  failure of the device
     The whole experiment demonstrates that monitoring the quality of CCD process and analysing failure of the device by microelectronic test patterns is practical and reliable.
     整个实验表明,用微电子测试图形监控CCD工艺、分析器件失效,是可行可靠的。
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  “器件失效”译为未确定词的双语例句
     The devices structure are ITO/TPA-PPV (38 nm)/ TNSC25 nm)/ Alq3(30 nm)/Al and ITO/PDAC/TPA-PPV nanoparticles film/BCP (20 nm) /Akfc (30 nm) /Al respectively. The devices performance were studied and invalidation of the devices were explained.
     用TPA-PPV纳米粒子作为发光层制备了结构为ITO/PDAC/TPA-PPV nanoparticles film/BCP(20 nm)/Alq_3(30 nm)/Al的发光二极管器件,研究了器件性能,并对器件失效原因进行了解释。
短句来源
     PEM in failure detect and analysis
     PEM用于半导体器件失效缺陷检测和分析
短句来源
     hFE (D)/hFE (0)=80%, 70% and 50% was taken as the failure criteria for transistors. The experimental results have shown that distributing curves depend on failure criteria.
     取hFE(D)/hFE(O)=80%,70%,50%为器件失效判据,实验结果表明,失效分布曲线取决于失效判据。
短句来源
     Research on Failure Mechanism and Reliability Evaluation of SDB/SOI Bipolar Devices
     SDB/SOI双极器件失效机理与可靠性评价技术研究
短句来源
     While the PF-D straights are extrapolated to lower PF, the failure total dose was only several tens Gy for the failure probabilities being 0.1% and 0.01% in some devices.
     当将PF-D直线外推到低PF区时,有些器件失效概率为0.1%和0.01%的失效总剂量仅为几十戈瑞(Gy(Si))。
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  相似匹配句对
     Analyses of semiconductor devices ineffectiveness
     半导体器件失效分析研究
短句来源
     Analysis on Abatement Mechanism of Electronic Units in Hydropower Stations
     水电站电子器件失效分析
短句来源
     FAILURE ANALYSIS TECHNOLOGY
     失效分析技术
短句来源
     FAILURE ANAL YSIS PROCEDURE
     失效分析程序
短句来源
     Protection Devices
     保护器件
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  device failure
Revisions of inflatable penile prostheses are more often required for nonmechanical reasons than for device failure.
      
As load increased, the menisci separated until device failure.
      
Early detection of wear may allow prediction of device failure.
      
Relevant parameters were major complications such as significant infection, intraoperative bleeding, facial nerve injury, implant loss and device failure, as well as lesser complications, including delayed wound healing, chronic pain and vertigo.
      
Revision of an artificial disc with an artificial disc can be performed safely and adequately with the Charité disc prosthesis as an alternative to fusion necessitated by a device failure.
      
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  failure of the device
The main problem was mechanical failure of the device in four patients.
      
Extrusion forces and the degree of deformation occurring until mechanical failure of the device-body interface were measured for the two types of fixation systems.
      
2) Placement of a new band: for failure of the device, accidental removal (slippage in difficult conditions), and erosion after a delay.
      
Areas of persistent stagnation in the flow field may result in thrombus formation and catastrophic failure of the device.
      
Because this type of fault does not re ect a permanent failure of the device, it is termed soft.
      
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In the paper the results of the primary reliablity test of TV-IF SAW filters are presented. The failure phnomenons of the devices under high temperatur and high tempeatur-high humidity loading tests are discussed and some comments to avoid the failure of the devices are proposed

本文报道了声表面波电视中频滤波器可靠性的初步试验概况,介绍了器件在高温负荷试验和高温高湿负荷试验中的失效现象,并提出了防止这种器件失效的一些见解.

Al-Si ohmic contact made by CW CO_2 laser irradiation instead of sintering is report-ed.Laser annealing having the feature of transient annealing,Al-Si interdiffusion phe-nomenon which causes the failure for shallow junction device can be avoided or decreas-ed significantly,therefore ohmic contact with good junction property can be achieved.This method offers a way for improving the integrated density of LSI.

本文报道了用连续CO_2激光辐照代替热合金化做Al-Si欧姆接触.由于激光退火具有瞬时退火的特点,避免或是明显地减少导致残结器件失效的Al-Si互扩散现象,从而达到保持良好结特性的欧姆接触.为提高大规模集成电路的集成度提供了一条途径.

A Simple and direct method,Al-Si ohmic contact achieved by utilizing capacitance dischar- ging instead of conventional sintering,is introduced.Using this method,Al-Si interdiffusion phenomenon which causes the failure for shallow junction device can be restricted effectively.

本文报导了一种用电容放电代替常规热合金化实现 Al-Si 欧姆接触的简捷方法。该法能有效地抑制导致浅结器件失效的 Al-Si 互扩散现象,从而具有良好的结特性。

 
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