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   压阻器件 的翻译结果: 查询用时:0.202秒
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压阻器件
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  “压阻器件”译为未确定词的双语例句
     Freeze Compensation about Silicon Sensors by Computer
     利用计算机进行扩散硅压阻器件零点的温度补偿
短句来源
     Under 2×10 -7 N force on the tip, the piezoresistive sensitivity coefficient is 5.41×10 -4 , which is sufficient for piezoresistive sensitivity during data reading.
     悬臂梁上的压阻器件敏感度 (电阻相对变化 )在 2× 1 0 - 7N预力作用针尖处时 ,达到了 5 .4 1× 1 0 - 4,满足纳米数据坑读出灵敏度的要求 .
短句来源
     Application of silicon bridge piezoresistive element in air pressure measurment
     桥式硅压阻器件在气压测量中的应用
短句来源
     The principle,specifications and performance of the silicon piezoresistive element are presented.
     介绍了桥式硅压阻器件的工作原理、性能指标和工作特点。
短句来源
     For the purpose of aiding the development of effective MEMS strain sensors using polysilicon nano-film,we investigate the relationship between the B-doped concentration and the gauge factor of LPCVD-grown polysilicon nano-film and analyze the structure of the film via scanning electron photomicrographs and X-ray diffraction-spectra.
     为有效利用多晶硅纳米薄膜研制MEMS压阻器件,本文对LPCVD多晶硅纳米薄膜应变系数与掺硼浓度的关系进行了研究,并利用扫描电镜和X射线衍射实验分析了薄膜的结构特点.
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  相似匹配句对
     Protection Devices
     保护器件
短句来源
     PRESSURE SENSOR BASED ON TRANSVERSE PIEZORESISTIVE EFFECT OF SILICON
     利用硅横向压阻效应的压力敏感器件
短句来源
     Application of silicon bridge piezoresistive element in air pressure measurment
     桥式硅压阻器件在气压测量中的应用
短句来源
     Connecting device-Part (I)
     连接器件(1)
短句来源
     Meso-piezoresistance effect
     介观压阻效应
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By using statistical method reported in this paper are the analyses for the transverse piezoresistance of polysilicon film with a specific preferential orientation. Both n-type and p-type average grain piezoresistive coefficients of poly-silicon with the preferential orientations of <100> <110>,<111>,<211>,<221>, <311>,<331> have been cal culated. Meanwhile, the average grain piezoresistive coefficients of polysilicon with random orientations have also been cal culated by using random statistical method. Based...

By using statistical method reported in this paper are the analyses for the transverse piezoresistance of polysilicon film with a specific preferential orientation. Both n-type and p-type average grain piezoresistive coefficients of poly-silicon with the preferential orientations of <100> <110>,<111>,<211>,<221>, <311>,<331> have been cal culated. Meanwhile, the average grain piezoresistive coefficients of polysilicon with random orientations have also been cal culated by using random statistical method. Based on Ohm's law and grain characyeris-tics of polysilicon, the analytical expression of the sensitivity of polysilicon transverse piezoresistance is obtained,The sensitivity and the theoretical dependence of sensitivity on the angle a between stress and device strip have been verified by experiments. By comparing the experimental results with the theoretical results, Young's modulus of polysilicon is obtained. These results shows that polysilicon transverse piezoresisilve pressure sensors have had practical value, and the design rules for optimized device arc suggested.

本文用统计方法对择优生长的多晶硅横向压阻进行了分析:计算了<100>、<110>、<111>、<211>、<221>、<311>、<331>等低指数晶向择优生长的P型和N型多晶硅横向平均晶粒压阻系数;采用全空间统计平均的方法,计算得到了晶向完全随机的多晶硅横向平均晶粒压阻系数;从欧姆定律和多晶硅晶粒特性出发,推导了多晶硅横向压阻灵敏度的表达式。通过实验测量了多晶硅横向压阻器件的灵敏度及其与角度的关系,证实多晶硅横向压阻灵敏度与器件倾角α符合sin2α的关系。将实验结果与理论分析的结果相比较后,得到了多晶硅的杨氏模量,这些结果表明多晶硅横向压力传感器具有实用价值,并为器件提供了优化的设计方案。

The fundamental working principle of integrated nano mechanical probe's realizing ultrahigh density storage is illustratrated. After the design of component,both the theoretical and finite element method (FEM) analysis are provided. Using the micromachining technology process,the piezoresistor and the electro thermal nano tip are integrated on the silicon micro cantilever. The second order relationship between the heating resistance and its temperature is mined by using resistance temperature demarcating...

The fundamental working principle of integrated nano mechanical probe's realizing ultrahigh density storage is illustratrated. After the design of component,both the theoretical and finite element method (FEM) analysis are provided. Using the micromachining technology process,the piezoresistor and the electro thermal nano tip are integrated on the silicon micro cantilever. The second order relationship between the heating resistance and its temperature is mined by using resistance temperature demarcating technology. Further microsecond rank instant electro thermal performance is tested, agreeing well with the theoretical results and FEM results, respectively. Under 4V pulse voltage, after heating 3μs, the temperature of heater is up to 463.15K, with the cooling time constant of 6.2μs and nearly 100kHz writing velocity during data writing. Under 2×10 -7 N force on the tip, the piezoresistive sensitivity coefficient is 5.41×10 -4 , which is sufficient for piezoresistive sensitivity during data reading.

阐述了集成纳机电探针实现超高密度存储的工作原理 ,并对所设计的结构进行了力学理论计算和有限元模拟 .采用硅基微纳机械加工工艺 ,将压阻敏感器和电热纳米针尖一体集成到硅悬臂梁上 ,实现器件制作 .对加热电阻进行温度标定 ,得到了加热电阻与温度间二次关系曲线 .在此基础上对器件进行微秒级瞬态电热特性分析和测试 ,测试结果与理论计算结果和有限元模拟结果都有较好的吻合 .测试结果表明在 4 V脉冲电压下 ,加热时间为 3μs时 ,针尖温度达到 4 6 3.1 5 K,相应的加热电阻的降温时间常数为 6 .2 μs,数据写入速度达到近百 k Hz.悬臂梁上的压阻器件敏感度 (电阻相对变化 )在 2× 1 0 - 7N预力作用针尖处时 ,达到了 5 .4 1× 1 0 - 4,满足纳米数据坑读出灵敏度的要求 .

The principle,specifications and performance of the silicon piezoresistive element are presented.An example is provided to demonstrate how to use the element.The element has high accuracy and wide measurement range.Its dimension is roughly same with ordinary IC chip with two column pins,and the price is low.The silicon piezoresistive element can be widely used in air pressure measuring and control applications.

介绍了桥式硅压阻器件的工作原理、性能指标和工作特点。通过设计实例说明了压阻器件的应用方法。试验证明:这种气压器件精度高、测量范围宽、体积和普通IC芯片相同、价格低,可以广泛应用在各种气压测量和控制领域。

 
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