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透射反射谱
相关语句
  analysis of transmission-reflection
     In the Present paper, the microstructure of diamond - like a - C: H: N films was studied by analysis of transmission - reflection and infrared spectra.
     通过透射-反射谱、红外光谱表征了类金刚石a—C:H:N薄膜微结构与氨含量的关系。
短句来源
  相似匹配句对
     Instrumentation for rapid determination of reflective and transmissive spectra
     反射透射的快速测定装置
短句来源
     Reflection and Transmission Spectrum of Sound at Anisotropic Solid Layer
     各向异性固体层的声反射透射
短句来源
     Femtosecond Transient Transmission and Reflection Spectroscopy of GaAs Thin Film
     GaAs薄膜的飞秒瞬态反射透射
短句来源
     Reconstruction by reflection of transmission holograms
     透射全息图的反射再现
短句来源
     Ultrasonic reflection and transmission at an adhesion interface
     超声在粘接界面的反射透射
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The amorphous Te-In-Sb thin films were prepared by radio frequency sputtering. We investigated the reflectance and the transmittance of different compositions of Te-In-Sb films. The structure and its change were observed by TEM and electron diffraction. The effect of the Te-In-Sb composition on their optical properties, such as dielectric constant, absorbation coefficient and optical gap etc. are discussed. As a result, we find that TeselnaiSbsr .film may be a suitable medium for erasable optical disk.

采用高频溅射方法制成Te-In-Sb系统的非晶态薄膜.系统的研究了不同组分薄膜的透射、反射谱,及其在结晶过程中的变化.用透射电镜研究了Te-In-Sb薄膜的结构和晶化过程.分析了组分对薄膜的吸收系数、介电常数、光学能隙等光学性质的影响.并由此综合评价了Te-In—Sb系统中比较适合作为光盘介质的组成.

The crystallization processes of amorphous Te_xIn_(0.6-x)Sb_(0.4) (0.24≤x≤0.42) thin films prepared by radio frequency sputtering were studied. Their electrical resistivity, light reflectance and transmittance were measured during their phase transition. The relationships between the structure and the optical and electrical properties were discussed. It is found that there exist two processes of structural relaxation, and the reflectance of Te-In-Sb films increases by about 30%—45% through the phase transition....

The crystallization processes of amorphous Te_xIn_(0.6-x)Sb_(0.4) (0.24≤x≤0.42) thin films prepared by radio frequency sputtering were studied. Their electrical resistivity, light reflectance and transmittance were measured during their phase transition. The relationships between the structure and the optical and electrical properties were discussed. It is found that there exist two processes of structural relaxation, and the reflectance of Te-In-Sb films increases by about 30%—45% through the phase transition.

研究了高频溅射制备的非晶态Te-In-Sb系统薄膜的电学性质和透射、反射谱及其在结晶过程中的变化。用TEM和DSC研究了该系统薄膜的晶化过程。分析了组分对薄膜的吸收系数、介电常数和光学能隙等光学性质的影响。发现Te-In-Sb系统非晶态薄膜在热处理过程中,存在二个结构(?)像阶段。当非晶态Te-In-Sb薄膜向晶态转变时,其反射率可发生30%—45%的变化。

The amorphous Ge/SiO2 superlattices have been prepared by rf sputtering with poIycrystalline Ge and quata targets in Ar ambient. Small angle X-ray diffraction measurement was carried to invedigate the structure of the samples, the results indicate the abrupt intedece and highly homogeneous layered structure of the superlattices. The optical band-gap of the superlattices were determined by infrared transmission and reflection spectra, the blue shift of about 0.3eV of optical band-gap was found when the width...

The amorphous Ge/SiO2 superlattices have been prepared by rf sputtering with poIycrystalline Ge and quata targets in Ar ambient. Small angle X-ray diffraction measurement was carried to invedigate the structure of the samples, the results indicate the abrupt intedece and highly homogeneous layered structure of the superlattices. The optical band-gap of the superlattices were determined by infrared transmission and reflection spectra, the blue shift of about 0.3eV of optical band-gap was found when the width of Ge potential well decrease from 0.38nm to 0.12nm.

在双靶射频溅射系统中,以氢气为工作气体,交替溅射高纯Ge和SiO2,制备出了非晶态Ge/SiO2超晶格.小角度X射线衍射分析结果表明样品具有良好的周期性和界面平整性.其光学带降Eopt由红外透射、反射谱确定.当锗势阱层厚度从0.38nm减小到0.12nm时,超晶格光学带欧发生约0.3eV的游移.

 
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