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二维生长模式
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  two dimensional mode
    Analysis of quadruple mass spectroscopy for laser ablated plumes indicates that the plumes consist of Zn, Se and 2Se. It was deduced that ZnSe thin film was grown in two dimensional mode.
    对激光烧蚀团束的四极质谱分析表明烧蚀团束主要由Zn ,Se和 2Se组成 ,并由此推断ZnSe薄膜的二维生长模式
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    <RESULTS: The metabolic characteristic of cardiac cells cultured in collagen scaffolds was similar to that cultured in polystyrene plates in two dimensional mode.
    结果:培养于多孔胶原支架上的心肌细胞的代谢特性近似于心肌细胞在培养板上培养的二维生长模式
短句来源
  two dimensional mode
    Analysis of quadruple mass spectroscopy for laser ablated plumes indicates that the plumes consist of Zn, Se and 2Se. It was deduced that ZnSe thin film was grown in two dimensional mode.
    对激光烧蚀团束的四极质谱分析表明烧蚀团束主要由Zn ,Se和 2Se组成 ,并由此推断ZnSe薄膜的二维生长模式
短句来源
    <RESULTS: The metabolic characteristic of cardiac cells cultured in collagen scaffolds was similar to that cultured in polystyrene plates in two dimensional mode.
    结果:培养于多孔胶原支架上的心肌细胞的代谢特性近似于心肌细胞在培养板上培养的二维生长模式
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  “二维生长模式”译为未确定词的双语例句
    Abstract The effects of atomic hydrogen on step bunching of GaAs grown by MBE on high index substrates including (100),(210),(311),and (331)are investigated by atomic force microscopy measurements.
    本文研究了MBE通常生长条件和氢原子辅助生长条件下(100)、(331)、(210)、(311)等表面外延形貌的变化.原子力显微镜AFM测试的结果表明:(100)表面在氢原子辅助生长条件下外延面的岛状起伏变得更为平坦,二维生长模式得到增强;
短句来源
    While the reduction of the Ga diffusion length on step structures surfaces is caused by atomic H, which are relevant for the accumulation of the complex microscopic step structures by passivating As dangling bonds to be terminated by atomic H. It is expected that the improvement of step bunching by atomic H could be applied to the direct growth of low dimensional structures in a controlled way.
    而对于平坦的(100)表面氢原子的诱导作用使得Ga迁移长度增加,导致二维生长模式的进一步增强.预期氢原子辅助MBE生长导致的台阶积累效应可以用于低维结构的直接生长
短句来源
    The interlayer of Pd was grown by pulsed laser deposition, whereas the Co layer was prepared by thermal deposition.
    脉冲激光溅射生长的单原子Pd层呈现了很好的二维生长模式.
短句来源
    GaN films in 2-D growth mode were grown by plasma-assisted molecular beam epitaxy (MBE) under a range of low-temperature buffer layer conditions.
    在射频(RF)等离子体辅助分子束外延(MBE)系统中,采用低温缓冲层等一系列生长工艺制备出二维生长模式的GaN材料;
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  two dimensional mode
The model has been tested in a two dimensional mode against analytic solutions for a standing wave in a closed basin, tidal flow in a annular basin with constant depth and wind driven flow in a elliptic cylindrical basin.
      
At the low oxygen pressure, the Nb-STO film grew in the two dimensional mode.
      
Rigorous two dimensional mode expansion simulations are applied to verify the predictions of the approximate model.
      


Abstract We present a new approach to fabricate quantum dots using self-organized growth of InAs on GaAs (100) substrates.Both cross-sectional and plan-view TEM micrographs clearly show that strikingly uniform and very dense InAs QDs appeared after a critical coverage of 1. 7 ML, while InAs film is rather flat before the critical coverage. Optical characterization of these self-organized InAs QDs are studied by photoluminescence spectroscopy.

本文利用在GaAs(100)衬底上自组织生长超薄层InAs的方法得到了InAs量子点结构.当InAs的覆盖度小于1.7ML(Mono-Layer)时,InAs层仍保持二维生长模式,而当InAs的覆盖度大于1.7ML时,InAs层将会成岛生长,得到的量子点的尺寸和分布相当均匀.我们还研究了不同覆盖度的InAs层的光致发光(PL)特性,结果发现在成岛前后,它们的PL特性有明显差异.

Abstract The effects of atomic hydrogen on step bunching of GaAs grown by MBE on high index substrates including (100),(210),(311),and (331)are investigated by atomic force microscopy measurements. Comparative results with and without atomic hydrogen show that atomic hydrogen assisted MBE results in a reduction of the Ga diffusion length on high index surfaces which exhibit a high density of steps at typical growth conditions. On (311) surfaces step bunching is promoted by atomic H. (331) surfaces exhibit step...

Abstract The effects of atomic hydrogen on step bunching of GaAs grown by MBE on high index substrates including (100),(210),(311),and (331)are investigated by atomic force microscopy measurements. Comparative results with and without atomic hydrogen show that atomic hydrogen assisted MBE results in a reduction of the Ga diffusion length on high index surfaces which exhibit a high density of steps at typical growth conditions. On (311) surfaces step bunching is promoted by atomic H. (331) surfaces exhibit step arrays whose lateral periodicity of steps become smaller with atomic H. On (210) surfaces, the morphology shows a smaller size island structures with atomic H. Only on (100) surface, the shapes of island on the surface are similar with and without atomic H, while the surface becomes more flat under atomic H. We considered that the increment of Ga diffusion length improved by atomic H enhance the 2D growth mode on (100) surface. While the reduction of the Ga diffusion length on step structures surfaces is caused by atomic H, which are relevant for the accumulation of the complex microscopic step structures by passivating As dangling bonds to be terminated by atomic H. It is expected that the improvement of step bunching by atomic H could be applied to the direct growth of low dimensional structures in a controlled way.

本文研究了MBE通常生长条件和氢原子辅助生长条件下(100)、(331)、(210)、(311)等表面外延形貌的变化.原子力显微镜AFM测试的结果表明:(100)表面在氢原子辅助生长条件下外延面的岛状起伏变得更为平坦,二维生长模式得到增强;(331)面在两种条件下均显示出台阶积累(stepbunching)式生长,而氢原子辅助生长则减小了台阶结构的横向周期;(210)面在氢原子辅助生长下也使原表面存在的岛状结构尺寸减小;在(311)表面氢原子诱导的作用明显地增强了台阶积累生长模式.本文认为氢原子诱导作用机制在于:外延面台阶处As原子和H原子结合减小了表面结合能,导致Ga原子表面迁移长度的减小,增强了台阶积累生长效应;而对于平坦的(100)表面氢原子的诱导作用使得Ga迁移长度增加,导致二维生长模式的进一步增强.预期氢原子辅助MBE生长导致的台阶积累效应可以用于低维结构的直接生长

Crystalline ZnSe thin films have been deposited on polished GaAs(100) substrates by pulsed laser ablation of a single target of polycrystalline ZnSe solid using KrF 248 nm excimer laser. Chemical etching and high temperature heating were used for pretreatment of substrates. Atomic force microscopy (AFM) shows that the average roughnesses of ZnSe thin films can reach 3~4 nm. X ray diffraction (XRD) shows that FWHM of ZnSe (400) peaks are 0.4°~0.5°. Analysis of quadruple mass spectroscopy for laser ablated plumes...

Crystalline ZnSe thin films have been deposited on polished GaAs(100) substrates by pulsed laser ablation of a single target of polycrystalline ZnSe solid using KrF 248 nm excimer laser. Chemical etching and high temperature heating were used for pretreatment of substrates. Atomic force microscopy (AFM) shows that the average roughnesses of ZnSe thin films can reach 3~4 nm. X ray diffraction (XRD) shows that FWHM of ZnSe (400) peaks are 0.4°~0.5°. Analysis of quadruple mass spectroscopy for laser ablated plumes indicates that the plumes consist of Zn, Se and 2Se. It was deduced that ZnSe thin film was grown in two dimensional mode.

用 2 48nm的KrF准分子脉冲激光烧蚀ZnSe靶材沉积ZnSe薄膜。靶采用多晶ZnSe片 ,衬底采用抛光GaAs(10 0 )。衬底预处理采用化学刻蚀和高温处理。原子力显微镜 (AFM )观察显示在GaAs(10 0 )沉积的ZnSe薄膜的平均粗糙度为 3~ 4nm。X射线衍射 (XRD)结果表明ZnSe薄膜 (4 0 0 )峰的半高宽 (FWHM)为 0 4°~ 0 5°。对激光烧蚀团束的四极质谱分析表明烧蚀团束主要由Zn ,Se和 2Se组成 ,并由此推断ZnSe薄膜的二维生长模式

 
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