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变质层
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  damaged layer
    The results show that the thickness of the damaged layer on silicon wafers with surface roughness of 95nm and 227nm are 28μm and 48μm respectively. 
    结果表明,表面粗糙度依次为9.5nm和22.5nm两种〈111〉单晶硅片样品的变质层厚度分别为2.8μm和4.8μm。
短句来源
    An Investigation of The Damaged Layer on The Silicon Wafer Surface by SACP Technique
    用SACP技术研究ELID磨削后的单晶硅片表面变质层
短句来源
  “变质层”译为未确定词的双语例句
    The scratches and damage layer caused by lapping on the SiC wafer surface were reduced by chemo-mechanical polishing (CMP). After CMP,an extremely smooth and low damage layer surface with roughness Ra <1nm was obtained.
    采用化学机械抛光法,可以有效地去除SiC表面的划痕和研磨引入的加工变质层,加工后的SiC晶片粗糙度可小于1nm.
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  damaged layer
Influence of in situ photoexcitation on structure of damaged layer in GaAs (001) substrates implanted with Ar3+ ions
      
It is established that amorphization of the damaged layer proceeds via the formation and growth of clusters of radiation-induced point defects.
      
It is shown that the photoconductivity and edge absorption in mechanically polished and plastically deformed crystals are determined by the damaged layer.
      
This makes it possible to treat the damaged layer as a plane, introduced into the bulk, with an infinite surface recombination rate.
      
The data presented indicate that there is no damaged layer in the gate region of the structures, which is most strongly affected by the proton irradiation.
      
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Damaged layer was formed on the surface of silicon wafer during using ELID grinding technique to refine its surface roughness.the thickness and the structure of the damaged layer on the surface of two monocrystalline silicon wafers have been investigated by SACP technique.The results show that the thickness of the damaged layer on silicon wafers with surface roughness of 95nm and 227nm are 28μm and 48μm respectively.

利用扫描电镜的选区电子通道花样技术研究了用ELID磨削技术制作的两种单晶硅片磨削样品的表面变质层的厚度及其结构。结果表明,表面粗糙度依次为9.5nm和22.5nm两种〈111〉单晶硅片样品的变质层厚度分别为2.8μm和4.8μm。

The pulsed laser deposition technical is used to investigate the growth of YBa-2Cu-3O-{7-δ} (YBCO) film on MgO substrate through CeO-2/YSZ double buffer layers. It is found that the surface morphology of the substrate is the key parameter to obtain ideal epitaxial films. Using low energy ion beam to bomb the MgO surface for increasing its surface roughness and eliminating the metamorphic layer, we achieve the YBCO epitaxial film with fully 45° in-plane rotation. The YBCO film has a critical current density of...

The pulsed laser deposition technical is used to investigate the growth of YBa-2Cu-3O-{7-δ} (YBCO) film on MgO substrate through CeO-2/YSZ double buffer layers. It is found that the surface morphology of the substrate is the key parameter to obtain ideal epitaxial films. Using low energy ion beam to bomb the MgO surface for increasing its surface roughness and eliminating the metamorphic layer, we achieve the YBCO epitaxial film with fully 45° in-plane rotation. The YBCO film has a critical current density of 10+6A/cm+2 at 77K. The bi-epitaxial superconducting junction fabricated by wet method exhibits RSJ character.

我们使用脉冲激光沉积方法对YBa2Cu3O7-δ(YBCO)薄膜在MgO基片上通过CeO2/YSZ双缓冲层的生长进行了系统的研究,发现MgO单晶基片的表面质量是决定能否得到理想外延薄膜质量的关键因素,通过使用低能离子束对MgO表面进行轰击,以增加其表面粗糙度和去除变质层,得到了具有100%面内45°旋转的YBCO外延膜,其临界电流密度77K时在106A/cm2量级.通过湿法刻蚀得到的双外延Josephson结表现出RSJ特性.

This paper reviews the development of bulk SiC single crystals grown by sublimation and summarizes their actual status.The thermal field and growth techniques for the growth of SiC crystal are introduced in this paper.The machining technology of large SiC single crystal is also introduced.With the aid of numerical simulation,we have continued to make efforts to optimize the crucible design and the crucible position in the growth system to achieve an accurate distribution of the thermal field.It is found that...

This paper reviews the development of bulk SiC single crystals grown by sublimation and summarizes their actual status.The thermal field and growth techniques for the growth of SiC crystal are introduced in this paper.The machining technology of large SiC single crystal is also introduced.With the aid of numerical simulation,we have continued to make efforts to optimize the crucible design and the crucible position in the growth system to achieve an accurate distribution of the thermal field.It is found that the use of a low radial temperature gradient leads to a flattening of the crystal interface and therefore to an extended facet with better crystallization.The hardness of the SiC is very close to that of diamond,making it extremely difficult to process large-diameter SiC crystals by cutting,lapping,polishing,etc.Low-warp and low-surface-roughness SiC wafers sliced by a diamond wire saw were obtained.The scratches and damage layer caused by lapping on the SiC wafer surface were reduced by chemo-mechanical polishing (CMP).After CMP,an extremely smooth and low damage layer surface with roughness Ra <1nm was obtained.

回顾了SiC单晶的发展历史,总结了目前的发展状况,同时介绍了SiC单晶生长所需要的温场和生长工艺,最后介绍了SiC单晶的加工技术.通过模拟计算与具体实验相结合的方法,调整坩埚在系统中的位置及优化坩埚设计可以得到理想温场.近平微凸的温场有利于晶体小面的扩展,进而有利于减少缺陷提高晶体的质量.由于SiC硬度非常高,对单晶后续的加工造成很多困难,包括切割和磨抛.研究发现利用金刚石线锯切割大尺寸SiC晶体,可以得到低翘曲度、低表面粗糙度的晶片;采用化学机械抛光法,可以有效地去除SiC表面的划痕和研磨引入的加工变质层,加工后的SiC晶片粗糙度可小于1nm.

 
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