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   变质层 在 金属学及金属工艺 分类中 的翻译结果: 查询用时:0.872秒
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变质层     
相关语句
  deteriorative layer
    Its surface microhardness is improved to some extent, and the depth of the deteriorative layer of its surface is reduced.
    零件表面的显微硬度有所提高,同时表面变质层深度也减小了。
短句来源
  damaged layer
    Texture and Assessment of the Microstate of the Damaged Layer on the Grinding Surface
    磨削表面变质层微观状态特征与评估
短句来源
    From the analysis of the experimental results by TEM, it is demon-strated that the polishing damaged layer of marble is in the amorphous and microcrystal forms.
    进而利用透射电镜证明:该变质层是由非晶和微晶组成的。
短句来源
  metamorphic layer
    wear-resistance of the metamorphic layer related to(T_p)at the ambitof 4—2000μs hare been studied. The effect of the polarity of the poles and heat treatment processon the metamorphic layer has beeh discussed. This paper made a new uiewpoint concerning distri-bution of hardness wear-resistance of the metamorphic layer.
    在研究变质层组织的同时,重点研究脉宽(τp)在4~2000μs 范围变化对变质层的粗糙度、厚度、裂纹、硬度与耐磨性等之间的关系,对白亮层的硬度与耐磨性提出新的论点,并讨论了电极极性、电加工后热处理对变质层的影响。
短句来源
  alterative layer
    Research of Residual Stress on Alterative Layer for 20Cr_2Ni_4A Gear
    20Cr_2Ni_4A齿轮磨削变质层残余应力研究
短句来源
    This process uses dissociative fine abrasives to polish the surface to abtain fine roughness and high quality surface without alterative layer.
    这种利用游离态磨粒进行工件的抛光加工的工艺,可获得高的表面质量和表面粗糙度值,而且加工表面无加工变质层.
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  damaged layer
Influence of in situ photoexcitation on structure of damaged layer in GaAs (001) substrates implanted with Ar3+ ions
      
It is established that amorphization of the damaged layer proceeds via the formation and growth of clusters of radiation-induced point defects.
      
It is shown that the photoconductivity and edge absorption in mechanically polished and plastically deformed crystals are determined by the damaged layer.
      
This makes it possible to treat the damaged layer as a plane, introduced into the bulk, with an infinite surface recombination rate.
      
The data presented indicate that there is no damaged layer in the gate region of the structures, which is most strongly affected by the proton irradiation.
      
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  metamorphic layer
Structural and optical properties of InAs quantum dots (QDs) deposited on the surface of a thick InGaAs metamorphic layer grown on a GaAs substrate have been studied.
      
The rise of In content in the InGaAs layer results in the red shift of the photoluminescence (PL) line, so that with 30 at % indium in the metamorphic layer the PL peak lies at 1.55 μm.
      
The quantitative estimates thus obtained led the authors to important conclusions: first, it was demonstrated that the estimated abundances of elements in the granite-metamorphic layer of the continental crust presented in the classic works by A.P.
      
New data confirmed that, in the central area of the Barents Sea, the "granitic-metamorphic" layer of the crust with a seismic velocity of 6.2 km/s typical of the Baltic Shield is absent.
      
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