Diam ond film w as used as buried insulator in silicon on diam ond ( S O D) technology. 54 H C T03 C M O S/ S O D integrated circuit w as fabricated by using S O D w afer. The recovery character istics of the S O D circuit under radiation w ere studied, and the results show that the recovery ability ofthe S O D circuit is clearly higher than that of bulk silicon circuit.
以金刚石膜作为绝缘埋层， 利用金刚石膜上的薄层硅（ S O D）技术， 制作 54 H C T03 C M O S／ S O D 结构的集成电路． 对该电路在辐照后的恢复特性进行研究． 结果表明， S O D 电路在大剂量辐照后的恢复能力明显强于体硅电路；
This paper puts fo rward full consideration of design of th e structure parameter of high-temperatur e bulk-silicon CMOS inverter and brings about the results of optimum design of high-temperature bulk-silicon CMOS inver ter in wide temperature range(27～250 ℃), on the basis of comprehensive research of the high-temperature models of DC cha racteristic and transient characteristi c of bulk-silicon CMOS inverter.
A new method of preventing bulk-Si CMOS devices from latchup
The numeric simulation of LDMOS and NMOS devices, as well as the experiment of inductors on bulk-Si substrate, demonstrate excellent performance of active devices and passive elements, which validates the feasibility of the compact integration technology for SOI RF IC.
Both the theoretical simulation and experiment results show that the relationship betweenμeff and Eeff in strained-Si is similar to the one in bulk Si. The mobility reaches its maximum when Eeff equals to 2×105V/cm.
Although the aging mechanisms and investigation methods are more sophisticated than those in bulk Si,the degradation of SOI MOSFETs does not appear to impede the development of high performance low-voltage ULSI SOI circuits.
Compared with the bulk Si BJMOSFET, because of the buried oxide in the SOI device, it doesn't have most problems of the bulk Si device and the superiority of BJMOSFET based on SOI over bulk Si BJMOSFET is analyzed in the bulk effect,hot carrier effect,parasitic capacitance,short-channel effect and latch-up effect.
After irradiation with high doses (～103 displacements per nanocrystal), amorphization was observed, which is not characteristic of bulk Si.
A number of effects in metal/(tunnel-thin SiO2)/p+-Si structures associated with electron tunneling from the valence band of bulk Si into a metal have been studied.
The Direct Current (DC) characters measured by HP 4155B indicate that the maximum saturated transconductance is twice bigger than that of bulk Si PMOSFET.
After annealing at elevated temperatures, the clusters coalesce and inhomogeneous surface morphology of the NiSi2 is obtained in the case of the deposition onto the clean surface, due to immediate Ni diffusion into the bulk Si.
Under forward bias, the diodes emit infrared electroluminescence closely below the band gap of bulk Si.