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体硅     
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  bulk silicon
     Most important methods to preparation of silicon on insulator are separation by implanted oxygen and smart cut of bulk silicon.
     注氧隔离法 (SIMOX)和体硅智能剥离法 (smart cut)是目前制备绝缘体上的硅 (SOI)材料的最重要的两种方法。
短句来源
     Compact I-V Model for Sub-100nm Bulk Silicon MOSFETs 
     亚100nm体硅MOSFET集约I-V模型
短句来源
     Bulk Silicon CMOS FinFET's Structure and Characteristics
     体硅CMOS FinFET结构与特性研究
短句来源
     Micro-vibration sensors fabricated by bulk silicon process have the advantage of high sensitivity and low noise compared with the surface micromachining.
     体硅工艺微振动传感器与表面工艺微振动传感器相比,具有灵敏度高、噪声低等优点.
短句来源
     Diam ond film w as used as buried insulator in silicon on diam ond ( S O D) technology. 54 H C T03 C M O S/ S O D integrated circuit w as fabricated by using S O D w afer. The recovery character istics of the S O D circuit under radiation w ere studied, and the results show that the recovery ability ofthe S O D circuit is clearly higher than that of bulk silicon circuit.
     以金刚石膜作为绝缘埋层, 利用金刚石膜上的薄层硅( S O D)技术, 制作 54 H C T03 C M O S/ S O D 结构的集成电路. 对该电路在辐照后的恢复特性进行研究. 结果表明, S O D 电路在大剂量辐照后的恢复能力明显强于体硅电路;
短句来源
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  bulk-silicon
     Research on the 500 V Bulk-Silicon N-LDMOS
     500V体硅N-LDMOS器件研究
短句来源
     The device is fabricated using MEMS bulk-silicon technology,whose sensitive degree is 27 3Hz/g,and the resolution is 167 8μg.
     利用MEMS体硅工艺研制了这种新型加速度计 ,测试的灵敏度为 2 7 3Hz/ g ,分辨率为 16 7 8μg .
短句来源
     An Analytical Model for the Surface Electrical Field Distribution and Optimization of Bulk-Silicon Double RESURF Devices
     体硅Double RESURF器件表面电场解析模型及优化设计(英文)
短句来源
     Optimum Design of High-temperature Bulk-silicon CMOS Inverter in Wide Temperature Range
     宽温区高温体硅CMOS倒相器的优化设计
短句来源
     This paper puts fo rward full consideration of design of th e structure parameter of high-temperatur e bulk-silicon CMOS inverter and brings about the results of optimum design of high-temperature bulk-silicon CMOS inver ter in wide temperature range(27~250 ℃), on the basis of comprehensive research of the high-temperature models of DC cha racteristic and transient characteristi c of bulk-silicon CMOS inverter.
     在对体硅 CMOS倒相器直流特性、瞬态特性的高温模型和高温特性深入研究的基础上 ,提出了高温体硅 CMOS倒相器结构参数设计的考虑 ,给出了宽温区 (2 7~ 2 5 0℃ )体硅 CMOS倒相器优化设计的结果。
短句来源
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  bulk-si
     Comparison of the characteristics of DSOI, SOI and bulk-Si MOSFETs
     DSOI,SOI和体硅MOSFET的特性测量比较
短句来源
     The DSOI structure was investigated using a local oxygen imp lantation process to successfully fabricate DSOI, bulk-Si and SOI MOSFETs on th e same die.
     为了实现DSOI器件结构并且研究DSOI器件的特性,和SOI器件与体硅器件进行对比,采用新型的局域注氧工艺成功地在同一管芯上制作了DSOI、体硅和SOI3种结构的器件。
短句来源
     For single BULK-Si, SOI and DSOI MOSFET, this paper develops their thermal resistance models and analyses the analogous results accordingly.
     进而对体硅,SOI MOSFET器件,特别是DSOI MOSPET的热学特性进行数值计算,比较并分析了其数值计算结果。
短句来源
     A new method of preventing bulk-Si CMOS devices from latchup
     抑制体硅CMOS器件闭锁的新方法
     The numeric simulation of LDMOS and NMOS devices, as well as the experiment of inductors on bulk-Si substrate, demonstrate excellent performance of active devices and passive elements, which validates the feasibility of the compact integration technology for SOI RF IC.
     经过对LDMOS、NMOS的工艺、器件的数值模拟和体硅衬底电感的初步实验,获得了良好的有源和无源器件特性,证明这一简洁的集成工艺方案是可行的。
短句来源
更多       
  bulk si
     Tests of total dose effects have been performed on the China-manufactured bulk Si MSI CMOS ICs irradiated by Co60 gamma-ray and 1.5MeV electron.
     本文报道了国产中规模体硅CMOS电路在~(60)Coγ射线和1.5MeV电子辐照下的总剂量效应的研究结果。
短句来源
     Both the theoretical simulation and experiment results show that the relationship betweenμeff and Eeff in strained-Si is similar to the one in bulk Si. The mobility reaches its maximum when Eeff equals to 2×105V/cm.
     理论分析和实验结果表明,应变硅载流子迁移率与横向电场Eeff的函数关系与体硅材料类似,峰值迁移率所对应的Eeff为2×105V/cm。
短句来源
     DSOI,bulk Si and SOI MOSFETs are fabricated on the same die successfully using local oxygen implantation process.
     通过局域注氧工艺 ,在同一管芯上制作了 DSOI、体硅和 SOI三种结构的器件 .
短句来源
     Although the aging mechanisms and investigation methods are more sophisticated than those in bulk Si,the degradation of SOI MOSFETs does not appear to impede the development of high performance low-voltage ULSI SOI circuits.
     虽然失效机理比体硅器件复杂,但并不会阻碍高性能、低电压ULSI SOI电路的发展。
短句来源
     Compared with the bulk Si BJMOSFET, because of the buried oxide in the SOI device, it doesn't have most problems of the bulk Si device and the superiority of BJMOSFET based on SOI over bulk Si BJMOSFET is analyzed in the bulk effect,hot carrier effect,parasitic capacitance,short-channel effect and latch-up effect.
     与体硅BJMOSFET比较,由于SOI技术完整的介质隔离避免了体硅器件中存在的大部分寄生效应,使基于SOI的BJMOSFET在体效应、热载流子效应、寄生电容、短沟道效应和闩锁效应等方面具有更优良的特性。
短句来源
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  bulk silicon
The susceptibility of twinned samples is diamagnetic and close to the value of χ for bulk silicon, and the nonlinearity of the dependence χ (H) is insignificant.
      
The defect structure of a disturbed layer formed in the process of erosion cutting of bulk silicon carbide crystals has been studied experimentally.
      
When the temperature is lowered below T*, a transition to one-dimensional hopping conduction in the bulk silicon regions occurs.
      
Silicon nanopowders produced by electron-beam-induced evaporation of a bulk silicon sample in an argon atmosphere are studied by the photoluminescence technique and Raman scattering spectroscopy.
      
The cyclotron resonance spectra of holes in bulk silicon in quantizing magnetic fields are investigated in the low-temperature range.
      
更多          
  bulk-silicon
Due to its cost effectiveness and reliability, wet-chemical etching of silicon is still one of the key technologies for producing bulk-silicon microstructures.
      
A bulk-silicon VDMOS structure consists of an n-type substrate on which an n-epi is grown, forming the drain area.
      
In addition, it is more and more frequently stated that SOI is capable to expand the predictable frontiers of the bulk-silicon technology.
      
Like in the previous set of simulations, the thickness of the silicon substrate of the bulk-silicon device is also varied.
      
Various bulk-silicon and silicon-onglass device designs are analyzed and compared.
      
  bulk-si
Measurement indicates that the strained-Si p-MOSFET's (L-4.2 μm) transconductance and the hole mobility are enhanced 30% and 50% respectively, compared with that of conventional bulk-Si.
      
  bulk si
After irradiation with high doses (~103 displacements per nanocrystal), amorphization was observed, which is not characteristic of bulk Si.
      
A number of effects in metal/(tunnel-thin SiO2)/p+-Si structures associated with electron tunneling from the valence band of bulk Si into a metal have been studied.
      
The Direct Current (DC) characters measured by HP 4155B indicate that the maximum saturated transconductance is twice bigger than that of bulk Si PMOSFET.
      
After annealing at elevated temperatures, the clusters coalesce and inhomogeneous surface morphology of the NiSi2 is obtained in the case of the deposition onto the clean surface, due to immediate Ni diffusion into the bulk Si.
      
Under forward bias, the diodes emit infrared electroluminescence closely below the band gap of bulk Si.
      
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