助手标题  
全文文献 工具书 数字 学术定义 翻译助手 学术趋势 更多
查询帮助
意见反馈
   体硅 在 无线电电子学 分类中 的翻译结果: 查询用时:1.52秒
图标索引 在分类学科中查询
所有学科
无线电电子学
仪器仪表工业
更多类别查询

图标索引 历史查询
 

体硅     
相关语句
  bulk silicon
    Study on the High Temperature Properties of Bulk Silicon, SOI and SiC MOS Devices
    体硅、SOI和SiCMOS器件高温特性的研究
短句来源
    PACKAGING OF WAVEGUIDE DEVICES BASED ON BULK SILICON MEMS TECHNOLOGY
    基于体硅微机械工艺的光波导器件封装技术
短句来源
    Packaging of Micro Electro Mechanical Systems Based on Bulk Silicon Bonding and Film Sealed Technology
    用于微电子机械系统封装的体硅键合技术和薄膜密封技术
短句来源
    CMOS FinFET Fabricated on Bulk Silicon Substrate
    体硅衬底上的CMOS Fin FET(英文)
短句来源
    Compact I-V Model for Sub-100nm Bulk Silicon MOSFETs 
    亚100nm体硅MOSFET集约I-V模型
短句来源
更多       
  bulk-silicon
    Research on the 500 V Bulk-Silicon N-LDMOS
    500V体硅N-LDMOS器件研究
短句来源
    An Analytical Model for the Surface Electrical Field Distribution and Optimization of Bulk-Silicon Double RESURF Devices
    体硅Double RESURF器件表面电场解析模型及优化设计(英文)
短句来源
    Optimum Design of High-temperature Bulk-silicon CMOS Inverter in Wide Temperature Range
    宽温区高温体硅CMOS倒相器的优化设计
短句来源
    Fabrication Technique of Bulk-Silicon Micro-Optical Switch in (110) Silicon
    利用(110)硅片制作体硅微光开关的工艺研究
短句来源
    Research on Temperature Effect of the Electrical Parameters of the Bulk-Silicon High-voltage LDMOSFET
    体硅高压LDMOS器件电学特性温度效应的研究
短句来源
更多       
  bulk-si
    Comparison of the characteristics of DSOI, SOI and bulk-Si MOSFETs
    DSOI,SOI和体硅MOSFET的特性测量比较
短句来源
    The DSOI structure was investigated using a local oxygen imp lantation process to successfully fabricate DSOI, bulk-Si and SOI MOSFETs on th e same die.
    为了实现DSOI器件结构并且研究DSOI器件的特性,和SOI器件与体硅器件进行对比,采用新型的局域注氧工艺成功地在同一管芯上制作了DSOI、体硅和SOI3种结构的器件。
短句来源
    A new method of preventing bulk-Si CMOS devices from latchup
    抑制体硅CMOS器件闭锁的新方法
    For single BULK-Si, SOI and DSOI MOSFET, this paper develops their thermal resistance models and analyses the analogous results accordingly.
    进而对体硅,SOI MOSFET器件,特别是DSOI MOSPET的热学特性进行数值计算,比较并分析了其数值计算结果。
短句来源
    In addition the electrical advantages of the SOI devices over the bulk-Si devices remained in the DSOI devices because of the buried oxide layer below the drain and source region.
    由于DSOI器件漏、源区下方埋氧层的存在,在消除了SOI器件严重的自热效应和浮体效应的同时,保持了SOI器件相对体硅器件的电学特性优势。
短句来源
更多       
  bulk si
    Both the theoretical simulation and experiment results show that the relationship betweenμeff and Eeff in strained-Si is similar to the one in bulk Si. The mobility reaches its maximum when Eeff equals to 2×105V/cm.
    理论分析和实验结果表明,应变硅载流子迁移率与横向电场Eeff的函数关系与体硅材料类似,峰值迁移率所对应的Eeff为2×105V/cm。
短句来源
    Tests of total dose effects have been performed on the China-manufactured bulk Si MSI CMOS ICs irradiated by Co60 gamma-ray and 1.5MeV electron.
    本文报道了国产中规模体硅CMOS电路在~(60)Coγ射线和1.5MeV电子辐照下的总剂量效应的研究结果。
短句来源
    Secondly, the operational mechanism of bulk Si SBSD-MOSFET device is simulated and its characteristics are presented in this paper with device simulation program DESSIS. The silulation result shows that there is great leakage current while its gate is in reverse bias in bulk Si SBSD-MOSFET. The leakage current consists of two parts: the thermionic emission from the source and the tunneling current from the drain.
    其次,本文通过二维模拟软件DESSIS模拟了体硅SBSD-MOSFET的基本伏安特性,模拟结果显示,体硅SBSD-MOSFET有着较大的反栅压泄漏电流,而反栅压泄漏电流包括两部分:来自源结的热发射泄漏电流与来自漏结的隧穿泄漏电流。
短句来源
    The components,analytical formula and simulation results of leakage currnet for SOI MOSFETs at high temperature are deeply studied on the base of the investigation on the leakage current at high temperature for bulk Si MOSFETs. The results of the comparision between these two kinds 0f MOSFET prove that the leakage current of SOI MOSFETs with thin silicon film at high temperature decreases significantly,SOI MOSFETs might be widely used in the high temperature field in the future.
    在对体硅MOSFET高温泄漏电流研究的基础上,深入研究了SOI材料MOSFET泄漏电流的组成、解析式及高温模拟结果,并与体硅MOSFET进行了比较,证明薄膜SOI材料MOSFET的高温泄漏电流明显减小,因而在高温领域中有着广阔的应用前景。
短句来源
    The aim of this paper is to give a flavor of the state-of-the-art SOI technology by discussing the synthesis of SOI wafers and the general interest of SOI circuits,the structure and performance of typical SOI devices. Critical questions related to the future of SOI are the raised,The article also addresses the challenges that SOI is facing in older to compete with bulk Si in the commercial areas.
    本文通过讨论SOI芯片的制作、SOI电路的特性、典型SOI器件的结构和性能阐述了SOI技术的现状,同时介绍了与SOI技术未来有关的一些关键问题.本文还强调了为了在商业领域与体硅材料竞争SOI材料面临的挑战.
短句来源
更多       

 

查询“体硅”译词为其他词的双语例句

 

查询“体硅”译词为用户自定义的双语例句

    我想查看译文中含有:的双语例句
例句
为了更好的帮助您理解掌握查询词或其译词在地道英语中的实际用法,我们为您准备了出自英文原文的大量英语例句,供您参考。
  bulk silicon
The susceptibility of twinned samples is diamagnetic and close to the value of χ for bulk silicon, and the nonlinearity of the dependence χ (H) is insignificant.
      
The defect structure of a disturbed layer formed in the process of erosion cutting of bulk silicon carbide crystals has been studied experimentally.
      
When the temperature is lowered below T*, a transition to one-dimensional hopping conduction in the bulk silicon regions occurs.
      
Silicon nanopowders produced by electron-beam-induced evaporation of a bulk silicon sample in an argon atmosphere are studied by the photoluminescence technique and Raman scattering spectroscopy.
      
The cyclotron resonance spectra of holes in bulk silicon in quantizing magnetic fields are investigated in the low-temperature range.
      
更多          
  bulk-silicon
Due to its cost effectiveness and reliability, wet-chemical etching of silicon is still one of the key technologies for producing bulk-silicon microstructures.
      
A bulk-silicon VDMOS structure consists of an n-type substrate on which an n-epi is grown, forming the drain area.
      
In addition, it is more and more frequently stated that SOI is capable to expand the predictable frontiers of the bulk-silicon technology.
      
Like in the previous set of simulations, the thickness of the silicon substrate of the bulk-silicon device is also varied.
      
Various bulk-silicon and silicon-onglass device designs are analyzed and compared.
      
  bulk-si
Measurement indicates that the strained-Si p-MOSFET's (L-4.2 μm) transconductance and the hole mobility are enhanced 30% and 50% respectively, compared with that of conventional bulk-Si.
      
  bulk si
After irradiation with high doses (~103 displacements per nanocrystal), amorphization was observed, which is not characteristic of bulk Si.
      
A number of effects in metal/(tunnel-thin SiO2)/p+-Si structures associated with electron tunneling from the valence band of bulk Si into a metal have been studied.
      
The Direct Current (DC) characters measured by HP 4155B indicate that the maximum saturated transconductance is twice bigger than that of bulk Si PMOSFET.
      
After annealing at elevated temperatures, the clusters coalesce and inhomogeneous surface morphology of the NiSi2 is obtained in the case of the deposition onto the clean surface, due to immediate Ni diffusion into the bulk Si.
      
Under forward bias, the diodes emit infrared electroluminescence closely below the band gap of bulk Si.
      
更多          
  其他


点击这里查询相关文摘
图标索引 相关查询

 


 
CNKI小工具
在英文学术搜索中查有关体硅的内容
在知识搜索中查有关体硅的内容
在数字搜索中查有关体硅的内容
在概念知识元中查有关体硅的内容
在学术趋势中查有关体硅的内容
 
 

CNKI主页设CNKI翻译助手为主页 | 收藏CNKI翻译助手 | 广告服务 | 英文学术搜索
版权图标  2008 CNKI-中国知网
京ICP证040431号 互联网出版许可证 新出网证(京)字008号
北京市公安局海淀分局 备案号:110 1081725
版权图标 2008中国知网(cnki) 中国学术期刊(光盘版)电子杂志社