Both the theoretical simulation and experiment results show that the relationship betweenμeff and Eeff in strained-Si is similar to the one in bulk Si. The mobility reaches its maximum when Eeff equals to 2×105V/cm.
Secondly, the operational mechanism of bulk Si SBSD-MOSFET device is simulated and its characteristics are presented in this paper with device simulation program DESSIS. The silulation result shows that there is great leakage current while its gate is in reverse bias in bulk Si SBSD-MOSFET. The leakage current consists of two parts: the thermionic emission from the source and the tunneling current from the drain.
The components,analytical formula and simulation results of leakage currnet for SOI MOSFETs at high temperature are deeply studied on the base of the investigation on the leakage current at high temperature for bulk Si MOSFETs. The results of the comparision between these two kinds 0f MOSFET prove that the leakage current of SOI MOSFETs with thin silicon film at high temperature decreases significantly,SOI MOSFETs might be widely used in the high temperature field in the future.
The aim of this paper is to give a flavor of the state-of-the-art SOI technology by discussing the synthesis of SOI wafers and the general interest of SOI circuits,the structure and performance of typical SOI devices. Critical questions related to the future of SOI are the raised,The article also addresses the challenges that SOI is facing in older to compete with bulk Si in the commercial areas.
After irradiation with high doses (～103 displacements per nanocrystal), amorphization was observed, which is not characteristic of bulk Si.
A number of effects in metal/(tunnel-thin SiO2)/p+-Si structures associated with electron tunneling from the valence band of bulk Si into a metal have been studied.
The Direct Current (DC) characters measured by HP 4155B indicate that the maximum saturated transconductance is twice bigger than that of bulk Si PMOSFET.
After annealing at elevated temperatures, the clusters coalesce and inhomogeneous surface morphology of the NiSi2 is obtained in the case of the deposition onto the clean surface, due to immediate Ni diffusion into the bulk Si.
Under forward bias, the diodes emit infrared electroluminescence closely below the band gap of bulk Si.