n型gap n-type gap(1) n type gap(2) n type gap layer(1)   n-type gap      The radiation defects induced by 85MeV 19F ion of 2.4×1015/cm2 and 2.2×1016/cm2 in N-type GaP, and of 1.6×1016/cm2 in P-type InP are investigated by positron annihilation lifetime technique respectively.      用正电子湮没寿命谱技术研究了2.4×1O15/cm2、2.2×1016/cm2注量的85MeV19F离子辐照N型GaP和1.6×1016/cm 2注量的85MeV19F离子辐照P型InP所产生的辐照缺陷. 短句来源   n type gap      The Best Conditions of Van De Pauw Method of N Type Gap Crystal Materials      N型GaP单晶范德堡测试法的最佳条件 短句来源      The n type GaAs substrates are used and their conductive type is changed to p type by tunnel junction for AlGaInP light emitting diodes(TJ LED),then n type GaP layer is used as current spreading layer.      报道了通过隧道结将衬底的导电类型从 n型转变到 p型 ,从而可以利用 n型 Ga P作为以 n型 Ga As为衬底的 Al Ga In P发光二极管的电流扩展层 . 短句来源   n type gap layer      The n type GaAs substrates are used and their conductive type is changed to p type by tunnel junction for AlGaInP light emitting diodes(TJ LED),then n type GaP layer is used as current spreading layer.      报道了通过隧道结将衬底的导电类型从 n型转变到 p型 ,从而可以利用 n型 Ga P作为以 n型 Ga As为衬底的 Al Ga In P发光二极管的电流扩展层 . 短句来源   “n型gap”译为未确定词的双语例句      In this paper the n-type single crystal and P-type epitaxaxy layer doped nitrogen of Gap have been analysed by the electron spectrum. The constituent, electron construction chemicel shift of the materials are given, and the quality problems of the materials are discussed also.      本定时n型GaP单晶及掺氦P型外延层,进行了电子能谱分析,给出了材料的组分结构状态、化学位移,并讨论了材料质量的有关问题。 短句来源     查询“n型gap”译词为其他词的双语例句   查询“n型gap”译词为用户自定义的双语例句     我想查看译文中含有：的双语例句 为了更好的帮助您理解掌握查询词或其译词在地道英语中的实际用法，我们为您准备了出自英文原文的大量英语例句，供您参考。   n-type gap n-type GaP(100) was anodized in H2SO4, HF, HCl, HBr, HI, HNO3 and H3PO4 in order to obtain porous structures. 例句来源       Zinc was diffused at 850°C from ternary sources containing 1-20 atom percent Zn and 0.5-1.0 atom percent P in Ga into n-type GaP grown by liquid phase epitaxy (LPE) and the liquid encapsulated Czochralski (LEC) process. 例句来源       The growth of liquid phase epitaxial (LPE) layers of n-type GaP on GaP substrates was investigated using a multi-wafer growth system constructed of fused quartz which had provisions for gas phase saturation and doping of the gallium melt. 例句来源       We report measurements to 500°C of resistivity and Hall mobility in Sn-doped, n-type GaP grown by liquid phase epitaxy. 例句来源                In this paper the n-type single crystal and P-type epitaxaxy layer doped nitrogen of Gap have been analysed by the electron spectrum.The constituent, electron construction chemicel shift of the materials are given, and the quality problems of the materials are discussed also.             本定时n型GaP单晶及掺氦P型外延层,进行了电子能谱分析,给出了材料的组分结构状态、化学位移,并讨论了材料质量的有关问题。 文摘来源          The radiation defects induced by 85MeV 19F ion of 2.4×1015/cm2 and 2.2×1016/cm2 in N-type GaP, and of 1.6×1016/cm2 in P-type InP are investigated by positron annihilation lifetime technique respectively. In irradiated N-type GaP,the monovacancies are created at both low and high fluence. and the concentration of defects gets higher as the fluence increases. For irradiated P-type InP, the defects are monovacancies,too.             用正电子湮没寿命谱技术研究了2.4×1O15/cm2、2.2×1016/cm2注量的85MeV19F离子辐照N型GaP和1.6×1016/cm 2注量的85MeV19F离子辐照P型InP所产生的辐照缺陷.结果表明:两种注量辐照在GaP中均产生较高浓度的单空位.其浓度随着辐照注量的增大而增加;辐照也在InP中产生较高浓度的单空位. 文摘来源       相关查询: n型 n型电导 n型si n连接型 n型保护区 n型催化剂 基本型n n-型 n型半导体 n型方钴矿 n型硅 n型结构  对查询结果不满意

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