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零压输出现象
相关语句
  zero-output phenomenon
     Irradiated by the 1.06 μ m 1.319 μ m 3.8 μ m laser respectively, when the incident laser power density is between the saturation threshold and the damage threshold, the vibrating phenomenon and the zero-output phenomenon can be seen in the PV-type detectors' response curve.
     1.分别用波长为1.06μm、1.319μm、3.8μm的激光辐照光伏型(PV)HgCdTe探测器,实验发现,当辐照激光的功率密度大于其饱和阈值而小于其破坏阈值时,探测器的输出存在“振荡现象”和“零压输出现象”。
短句来源
     3.A reasonable explanation is given to the zero-output phenomenon.
     3.对“零压输出现象”给出了合理的解释。
短句来源
  “零压输出现象”译为未确定词的双语例句
     New nonlinear phenomena of photovoltaic HgCdTe detectors, that is chaos and zero output, are found for the first time.
     首次发现了PV型HgCdTe探测器新的非线性现象—混沌现象和零压输出现象
短句来源
  相似匹配句对
     3.A reasonable explanation is given to the zero-output phenomenon.
     3.对“输出现象”给出了合理的解释。
短句来源
     Some new phenomena are found in the experiments, for example, "Vibrating", "Zero-output", etc.
     实验中发现了"振荡"、"输出"等一些新现象
短句来源
     New nonlinear phenomena of photovoltaic HgCdTe detectors, that is chaos and zero output, are found for the first time.
     首次发现了PV型HgCdTe探测器新的非线性现象—混沌现象输出现象
短句来源
     Phenomenon
     现象
短句来源
     Research on "Zero Distance" Phenonmenon
     “距离”现象研究
短句来源
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Theoretical research on soft-damage in photovoltaic semiconductor detectors under medium power density laser irradiation(between the saturation threshold and the damage threshold of detector) was carried out and a new mechanism was proposed.When laser irradiation density exceeds the saturation threshold of a detector,the transitions of the carriers between bands saturated,hot carriers are produced in the semiconductor and the hot carrier temperature is higher than the crystal lattice temperature.Therefore the...

Theoretical research on soft-damage in photovoltaic semiconductor detectors under medium power density laser irradiation(between the saturation threshold and the damage threshold of detector) was carried out and a new mechanism was proposed.When laser irradiation density exceeds the saturation threshold of a detector,the transitions of the carriers between bands saturated,hot carriers are produced in the semiconductor and the hot carrier temperature is higher than the crystal lattice temperature.Therefore the output of the photovoltaic detector decreases with the increase of laser power density till zero-voltage output appears.The output of a photovoltaic HgCdTe detector under laser irradiation is calculated.The calculating results are identical with experimental results.

对激光辐照功率密度高于探测器饱和阈值而低于其破坏阈值(中等功率的激光)时光伏型光电探测器的软损伤进行了理论研究,提出了一种新机制。当激光辐照功率密度超过探测器的饱和阈值以后,载流子的带间跃迁达到深度饱和,在半导体内产生热载流子且热载流子的温度高于晶格的温度,从而导致了光伏型光电探测器的电压输出信号随着辐照光功率密度的增加而下降直到零压输出的现象。对激光辐照下光伏型HgCdTe探测器的输出信号进行了模拟计算,结果表明,辐照光功率密度处于一定范围内探测器的输出信号随着辐照光功率密度的增加而逐步下降,甚至接近于零,与实验结果相符合。

 
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