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脉冲腐蚀
相关语句
  pulsed etching
     Porous Silicon Fabricated by Pulsed Etching Method and its Optical Properties
     脉冲腐蚀法制备多孔硅及其光学特性研究
短句来源
     Porous Silicon(PS) was prepared by pulsed and DC electrochemical etching method under the same etching conditions. The scanning electron microscopy(SEM) and the photoluminescence(PL)observation showed that the porous Silicon surface prepared by pulsed etching was more uniform and the Silicon particles were smaller.
     采用脉冲腐蚀和直流电化学腐蚀两种方法制备多孔硅,对这两种方法制备的多孔硅样品进行了扫描电镜和荧光光谱测量,发现脉冲腐蚀制备的多孔硅样品比直流腐蚀制备的多孔硅样品表面均匀、硅丝或者硅柱的尺寸较小、发光强度大,而且发光峰位有明显.
短句来源
     The pulsed etching method is adopted to fabricate PSBR,and the orghogonal method is used to optimize the experimental parameters.
     利用脉冲腐蚀法制备PSBR,采用正交参数设计法优化实验参数。
短句来源
  pulsed electrochemical etching
     Preparation of Uniformly Luminescence Porous Silicon by Pulsed Electrochemical Etching Method
     电化学脉冲腐蚀制备均匀发光多孔硅
短句来源
     Narrow-Line Light Emission from Porous Silicon Microcavities Prepared by Pulsed Electrochemical Etching Method
     电化学脉冲腐蚀法制备窄峰发射的多孔硅微腔
短句来源
     A dynamic etching model based on diffusion of HF acid explains the experimental results well. It indicates that the narrow emission peak of porous silicon mirocavities prepared by the pulsed electrochemical etching method can be attributed not only to longitudinal etching, but also to transverse etching (soaking etching) of HF.
     并用了以HF酸扩散为基础的多孔硅动态腐蚀机理对实验结果进行了解释,认为在用电化学脉冲腐蚀法制备多孔硅微腔的过程中,不但要考虑到HF酸对硅的纵向腐蚀(电流腐蚀),也要考虑到HF酸对多孔硅硅柱的横向腐蚀(浸泡腐蚀)。
短句来源
     Firstly, PSMs were prepared by the pulsed electrochemical etching method and the experimental conditions were optimized.
     一、用电化学脉冲腐蚀法制备多孔硅微腔,优化了实验参数。
短句来源
  pulse etching
     Preparation of Porous Silicon by Pulse Etching Method
     用脉冲腐蚀制备发光多孔硅
短句来源
     Abstract Pulse etching method is adapted to study the dynamical etching process in preparmg porous silicon. The relationship between the dynamical current and etching time is measured and is supposed to be due to the dynamical process of the reduction of HF in the etching holes and the diffusion of HF outside. Porous silicon samples prepared by pulse etching process have better uniformity,stronger luminescence intensity and some blueshift in PL spectra compared to that of the samples prepared by constant current etching process.
     采用脉冲腐蚀方法,研究多孔硅的动态腐蚀过程,测定了动态电流和时间的关系,提出并讨论了动态腐蚀机理.用脉冲腐蚀制备得到发光多孔硅,与直流腐蚀相比较,脉冲腐蚀能得到均匀性更好、发光更强的多孔硅,而且PL峰位有一定的蓝移,我们认为脉冲腐蚀是一种更优秀的制备方法,并对此作了初步的讨论.
短句来源
  “脉冲腐蚀”译为未确定词的双语例句
     Multilayer porous silicon(MLPS) was etched with alternate varied current density which made the porosity change periodically. We use AFM to investigate the cross section of the MLPS structure and get images of different layers with different porosity.
     多层多孔硅是采用交替变化脉冲腐蚀电流密度的方法制成的多孔度周期性变化的多孔硅结构,我们用AFM对多层多孔硅结构的侧向解理的截面进行观测,得到了不同多孔度层及其界面处的图像。
短句来源
     Porous silicon microcavities were etched with alternate varied current density which made the porosity change periodically.
     多孔硅微腔是采用交替变化脉冲腐蚀电流密度的方法制成的多孔度周期性变化的多孔硅结构。
短句来源
     The thermal stability of porous silicon (PS) Fabricated by pulsed anodic etching method was investingated by micro-Raman spectra, with different incident laser powers.
     运用微拉曼谱仪以不同功率的激光入射到用阳极脉冲腐蚀制备的多孔硅样品研究多孔硅的热稳定性。
短句来源
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  pulsed etching
The pulsed etching of silicon was accompanied by pulsed illumination coinciding either with current pulses or with zero-current periods.
      
  pulsed electrochemical etching
Single-mode, highly directional and stable photoluminescence (PL) emission has been achieved from porous silicon microcavities (PSMs) fabricated by pulsed electrochemical etching.
      
  pulse etching
We developed a XeF2 pulse etching system and clarified the Si etching characteristics.
      


Abstract Pulse etching method is adapted to study the dynamical etching process in preparmg porous silicon. The relationship between the dynamical current and etching time is measured and is supposed to be due to the dynamical process of the reduction of HF in the etching holes and the diffusion of HF outside.Porous silicon samples prepared by pulse etching process have better uniformity,stronger luminescence intensity and some blueshift in PL spectra compared to that of the samples prepared by constant current...

Abstract Pulse etching method is adapted to study the dynamical etching process in preparmg porous silicon. The relationship between the dynamical current and etching time is measured and is supposed to be due to the dynamical process of the reduction of HF in the etching holes and the diffusion of HF outside.Porous silicon samples prepared by pulse etching process have better uniformity,stronger luminescence intensity and some blueshift in PL spectra compared to that of the samples prepared by constant current etching process. It is suggested that pulse etching is a better method in preparing porous silicon.

采用脉冲腐蚀方法,研究多孔硅的动态腐蚀过程,测定了动态电流和时间的关系,提出并讨论了动态腐蚀机理.用脉冲腐蚀制备得到发光多孔硅,与直流腐蚀相比较,脉冲腐蚀能得到均匀性更好、发光更强的多孔硅,而且PL峰位有一定的蓝移,我们认为脉冲腐蚀是一种更优秀的制备方法,并对此作了初步的讨论.

AFM and PL are adopted to study the morphological and photoluminescent characteristics of a series of porous silicon (PS) samples etched with direct current and pulsed current.The results of AFM indicate that there are many “hillocks” at the surface of PS samples and the microstructure of PS samples is quite different with different etching modes.The amount of the small Si particles formed by pulsed etching is more than that by direct current etching under the equivalent etching conditions and the particles...

AFM and PL are adopted to study the morphological and photoluminescent characteristics of a series of porous silicon (PS) samples etched with direct current and pulsed current.The results of AFM indicate that there are many “hillocks” at the surface of PS samples and the microstructure of PS samples is quite different with different etching modes.The amount of the small Si particles formed by pulsed etching is more than that by direct current etching under the equivalent etching conditions and the particles appear more protruding and sharper by the pulsed etching.Moreover,PL spectra shows that it is easier to get photoluminescent PS samples with higher intensity by using pulsed etching method.The microstructure of PS samples plays a very important role in the generation of photoluminescence of porous silicon.

利用原子力显微镜(AFM)和光致荧光(PL)光谱对一系列直流腐蚀和脉冲腐蚀的多孔硅的微结构及发光特性进行了对比研究.表面和侧面的AFM结果表明,多孔硅表面呈“小山”状,有许多小的、突出的硅颗粒.在相同的腐蚀条件(等效)下,脉冲腐蚀的样品表面Si颗粒更加尖锐、突出,侧面的线状结构更明显,多孔硅层更厚.对应的PL谱,脉冲腐蚀的样品发光更强.量子限制效应的理论可以比较成功地解释这个结果

Multilayer porous silicon(MLPS) was etched with alternate varied current density which made the porosity change periodically.We use AFM to investigate the cross section of the MLPS structure and get images of different layers with different porosity.It is found that there is a inhomogenity of thickness of different layers in different period which was etched under the same condition.This inhomogenity lead to the broadening of the luminescent peak of the MLPS.

多层多孔硅是采用交替变化脉冲腐蚀电流密度的方法制成的多孔度周期性变化的多孔硅结构,我们用AFM对多层多孔硅结构的侧向解理的截面进行观测,得到了不同多孔度层及其界面处的图像。发现不同周期中相同条件下腐蚀得到的多孔硅层,其层厚随周期的不同而不同,从而限制了多孔硅发光峰半宽的缩小。对多层多孔硅的电化学腐蚀机理作了初步的探讨。

 
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