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大失配
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  “大失配”译为未确定词的双语例句
     Meantime, (002) peak of both films shifts slighty toward the higher diffraction angle(with Ni 2θ=34.5°, without Ni 2θ=34.7°) compared to the normal value of the bulk ZnO material(2θ=34.42°).
     从(002)的衍射峰位来看,加入Ni金属层的样品2θ=34.5°比未加入Ni金属层的样品2θ=34.7°更接近体材料ZnO的(002)方向的衍射峰2θ=34.42°,即水平方向受到相对较小的张应力。 Ni金属层的加入有效缓解了由于ZnO与Si衬底之间的大失配造成水平方向受到的张应力。
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     Synthesizing the advantages of model algorithmic control (MAC) in prediction, ootimization and feedback online real time, MAC is applied to PMSM speed control, Which only need fow precision model, and system isof better performance and stronger robustness.
     综合MAC在线实时预测、优化、反馈校正的优点,将MAC应用于PMSM的速度控制,系统算法简易,性能优良,鲁棒性强,对PMSM模型的精度要求很低,允许模型有较大失配
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     The results are important for the further work of growing latticematched Cd_(1-y)ZnyTe for Hg_(1-x)Cd_xTe epitaxy.
     该研究结果对于进一步优化在大失配的异质衬底上外延同Hg1-xCdxTe材料晶格匹配的Cd1-yZnyTe材料的Zn组分具有指导意义。
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     A Method of Measuring Microwave Source Reflection Coefficient Using High Mismatch Power Sensor
     用大失配功率座法测量稳幅环路的等效源反射系数
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     And the major outstanding issues, which have been encountered with during the investigation of integrated optoelectronic devices, are compatibility of semiconductor materials, that of structures and that of processes.
     本论文围绕着光电子集成中的大失配异质兼容(异材料系兼容)问题开展了大量研究工作,并已取得以下主要研究成果:
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  相似匹配句对
     Big Aristotle
     “”亚里士多德
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     A Big Cheater
     骗子
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     Review to the large-scale grassland degradation caused by improper policy system
     由政策制度失配造成草原面积退化的回顾与反思
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     ON THE INTERFACE MISFIT AND THE SUPERLATTICE STRUCTURES
     界面失配和超晶格结构
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  large lattice mismatch
Because of the large lattice mismatch of roughly 10%, CdTe and CdS can only be joined at the expense of a high density of misfit dislocations.
      
The evolution of the RHEED pattern in the initial growth stages shows that, regardless of the large lattice mismatch, growth becomes two-dimensional after the deposition of a few monolayers.
      
Low temperature GaN buffer layers grown by metal-organic vapor-phase epitaxy were used to accommodate the large lattice mismatch between InN and sapphire.
      
For both materials, the large lattice mismatch with the GaAs substrate results in the formation of an interface accumulation layer with a large defect concentration, which strongly affects the spin relaxation in these areas.
      
To heteroepitaxally grow the crystalline cubic-GaN (c-GaN) film on the substrates with large lattice mismatch is basically important for fabricating the blue or ultra-violet laser diodes based on cubic group III nitride materials.
      
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This paper describes an accurate method for measuring the efficiency of low loss reciprocal two-ports network under larger mismatch. The measuring accuracy of the system does not depend strictly on the mismatch of the device to be tested. For example, if the reflection coefficient and the efficiency of the device are 0.1 and 0.99 respectively and the reflection coefficient of the load to the device is 0.1, the mismatch error is only ±2×10-4. The total uncertainty for this case is 0.06%.

本文介绍一种测量低损耗互易二端口网络在较大失配情况下的功率传输效率的测试系统。该系统的测量精度对被测器件的失配不敏感。如当被测网络及其给定负载的反射系数均达0.1时,对于效率约为99%的被测器件,失配误差仅有2×10~(-4),而总精度可达±0.06%。

This paper discusses the application of inacrocomputer in theanalysis and computation of macroware networks.Taking the problemsof reflection and attenuation in the analysis of macrowave networksas an instance, present a BASIC program implemented in macroco-mputer APPLE-Ⅱ,Which works out the input reflectance Г_(in),workingattenuation L_a, insent attenuation L_i,maximum non'-matched errormax (△L_(i+)) and max (△L_(i-)), when S, Г_g and Г_L are known.

本文讨论了微机在微波网络分析计算中的应用,以微波网络分析中的反射和衰减问题作实例,编出BASIC程序,在APPLE-Ⅱ机上,经过调试,当已知S、Γg和Γ_L时,分别计算出输入反射系数Γin,工作衰减La、插入衰减Li、最大失配误差max(△Li+)和max(△Li-)。

Abstract For the target of developing long wave length optoelectronic material,some investigation on GaAs1-xSbx/GaAs-a very large lattice-mismatch heterostructure have been proceeded. A series of GaAs1-.xSbx in different x value has been successfully grown by using homemade type-Ⅲ MBE system. According to the chemical thermodynamic data of GaAs and GaSb, the combination rate of Sb in GaAsSb is much higher than As. Through a large amount of experments, we discovered that the x value can be controlled by flux...

Abstract For the target of developing long wave length optoelectronic material,some investigation on GaAs1-xSbx/GaAs-a very large lattice-mismatch heterostructure have been proceeded. A series of GaAs1-.xSbx in different x value has been successfully grown by using homemade type-Ⅲ MBE system. According to the chemical thermodynamic data of GaAs and GaSb, the combination rate of Sb in GaAsSb is much higher than As. Through a large amount of experments, we discovered that the x value can be controlled by flux ratio of Sb/Ga, and the dominance of Sb flux will be decreased when the growth temperature increased. The epilayer and interface have been checked by TEM and RBS technology. The results suggest that the composition step-changed buffer layer comfines the misfit dislocations in the in terface effectively, and even high quality epilayers can be obtained.

本文以开发长波长半导体光电子材料为目的,对GaAs1-xSbx/GaAs这一大失配异质结材料开展了较为深人的研究,利用国产MBEIII型设备外延生长了全组分的GaAs1-xSbx材料,化学热力学数据分析表明,Sb结合到GaAssb中的速率比As高得多,实验表明,合金组分可由Sb/Ga束流比控制,也发现Sb束流的支配作用随温度升高而降低.利用TEM和RBS技术研究了异质结界面及外延层的晶体质量,实验表明采用组分阶变的过渡层有效地抑制了界面位错向体层的延伸,可以获得较高晶体质量的外延层.

 
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