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   分子动力学计算机模拟 在 材料科学 分类中 的翻译结果: 查询用时:1.279秒
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分子动力学计算机模拟
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    Molecular dynamics simulation of the epitaxial growth of C 60 on MoS 2 substrate,which was already reported as an experimental success for a large lattice mismatching system,was performed. The simulated results show that van der Waals force makes it possible to epitaxially grow hetergenous films in the case of some highly lattice mismatching systems.
    实验上已经得出了在MoS2 基板上外延生长C60 薄膜的结果 ,本文用分子动力学计算机模拟方法对MoS2 基板上外延生长C60 薄膜进行了研究 ,证实范德瓦尔斯外延可以克服较大的晶格失配问题。
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  molecular dynamics computer simulation
The phenomenon of water penetration into sodium octanoate micelles studied by molecular dynamics computer simulation
      
The analysis of this phenomenon was based on a molecular dynamics computer simulation.
      
With a molecular dynamics computer simulation we investigated the dynamic properties of a monododecyl pentaethylene glycol (C12E5) molecule adsorbed at air/water and oil/water interfaces.
      
We use the molecular dynamics computer simulation technique to study the behavior of electron plasmas in the presence of highly charged ions and strong magnetic fields.
      
A new nonequilibrium molecular dynamics computer simulation method has been developed for the study of rapid interface kinetics.
      
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  molecular dynamics computer simulation
The phenomenon of water penetration into sodium octanoate micelles studied by molecular dynamics computer simulation
      
The analysis of this phenomenon was based on a molecular dynamics computer simulation.
      
With a molecular dynamics computer simulation we investigated the dynamic properties of a monododecyl pentaethylene glycol (C12E5) molecule adsorbed at air/water and oil/water interfaces.
      
We use the molecular dynamics computer simulation technique to study the behavior of electron plasmas in the presence of highly charged ions and strong magnetic fields.
      
A new nonequilibrium molecular dynamics computer simulation method has been developed for the study of rapid interface kinetics.
      
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Nanostructured materials are characterized by a typical structural size below 100nm. Due to its unique properties, great attention to nanostructured materials has increased in past years. The recent progress in nanostructured materials, especially their generation and synthesis, microstructure, mechanical and thermodynamic properties, is summarized in this paper. This paper also discusses several research hotspots of nanostructured materials and related molecular dynamics simulations. Several future research...

Nanostructured materials are characterized by a typical structural size below 100nm. Due to its unique properties, great attention to nanostructured materials has increased in past years. The recent progress in nanostructured materials, especially their generation and synthesis, microstructure, mechanical and thermodynamic properties, is summarized in this paper. This paper also discusses several research hotspots of nanostructured materials and related molecular dynamics simulations. Several future research topics are also presented.

纳米材料是由尺度在 1~100nm的微小颗粒组成的体系.由于它具有独特的性能而备受关注.本文总结了近几年来纳米材料的研究进展,着重从纳米材料的制备、微观结构、力学及热力学性能的研究情况作了一个概述,总结了有关纳米材料的几个研究热点以及分子动力学计算机模拟在纳米材料研究中的应用.最后并指出了几个急待研究的工作.

Lattice mismatching between different materials significantly forbids epitaxial growth of hetero structured films.However,if van der Waals force is mainly responsible for the epitaxial growth,lattice matching requirements can be considerably relaxed.Molecular dynamics simulation of the epitaxial growth of C 60 on MoS 2 substrate,which was already reported as an experimental success for a large lattice mismatching system,was performed.The simulated results show that van der Waals force makes it possible...

Lattice mismatching between different materials significantly forbids epitaxial growth of hetero structured films.However,if van der Waals force is mainly responsible for the epitaxial growth,lattice matching requirements can be considerably relaxed.Molecular dynamics simulation of the epitaxial growth of C 60 on MoS 2 substrate,which was already reported as an experimental success for a large lattice mismatching system,was performed.The simulated results show that van der Waals force makes it possible to epitaxially grow hetergenous films in the case of some highly lattice mismatching systems.

外延生长异质薄膜通常要求材料之间晶格匹配 ,然而利用范德瓦尔斯作用外延生长时 ,晶格匹配要求显著降低。实验上已经得出了在MoS2 基板上外延生长C60 薄膜的结果 ,本文用分子动力学计算机模拟方法对MoS2 基板上外延生长C60 薄膜进行了研究 ,证实范德瓦尔斯外延可以克服较大的晶格失配问题。

 
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