助手标题  
全文文献 工具书 数字 学术定义 翻译助手 学术趋势 更多
查询帮助
意见反馈
   靶流 的翻译结果: 查询用时:0.015秒
图标索引 在分类学科中查询
所有学科
核科学技术
更多类别查询

图标索引 历史查询
 

靶流
相关语句
  target current
     In order to increase neutron output of minitron, it is necessary to use the high-voltage multiplier with high target voltage, strong target current and high-power output.
     但为了克服其中子产额低的缺点,需要高靶压、大靶流及输出功率大的高压倍加器。
短句来源
  “靶流”译为未确定词的双语例句
     EL 1D2D METHOD FOR CALCULATING LASER CAVITY TARGET FLOW
     计算激光腔靶流场的EL-1D2D方法
短句来源
     The beam currents on the target for As+ or Se+ at 5 keV are 2~5uA, The size of implanted substrate is φ50.Uniformity of implantation is less than 3%.
     最低能量5keV的As~+、Se~+等重离子的靶流为2~5μA; 注入靶片φ50;
短句来源
     The THM is applied to derive the bare nucleus cross section of the ~9Be(p,α)~6Li reaction, which plays a key role in beryllium burning processes, from the cross section measurement of the suitable three-body process d(~9Be,α~6Li)n.
     本次d(~9Be,α~6Li)n实验是在北京串列加速器核物理国家实验室完成的。 串列加速器提供的22.44MeV的~9Be束流轰击CD2靶,流强1-5nA,使用1.5mm左右宽线靶,靶厚约257μg/cm2。
短句来源
     Numerical results show that this method can calculated fairly complicated flow in the cavity and get reasonable physical image.
     数值试验的结果表明,用这种方法计算腔靶流场的运动可以得到合理的物理图象
短句来源
  相似匹配句对
     Numerical Simulations of Flow Field in the Target Region of Accelerator-Driven Subcritical Reactor System
     ADS场的数值模拟
短句来源
     STREAM BEHAVIORS OF LASER - ABLATED PLASMAS
     激光中的等离子体实验研究
短句来源
     Mechanical Energy Flow
     机械能
短句来源
     WOUNDED PATIENT FLOW
     伤员
短句来源
     A New Type of Photoconductive Target
     新型光导
短句来源
查询“靶流”译词为用户自定义的双语例句

    我想查看译文中含有:的双语例句
例句
为了更好的帮助您理解掌握查询词或其译词在地道英语中的实际用法,我们为您准备了出自英文原文的大量英语例句,供您参考。
  target current
The second regime (?>amp;gt;8 kV) is characterized by the irregular launching of drops from the capillary, drop dispersion with respect to size, a sharp increase in the target current, and the sudden appearance of condensation in the air-steam jet.
      
The device converts the charge into a number of pulses (target current into the pulse repetition rate).
      
While sputtering Si with oxygen ions, the laser irradiation produced a strong increase of the target current and the SIMS intensities as well.
      
The laser induced effects observed in the SIMS intensity or the target current can be used for measuring the profile of an ion beam or for measuring the alignment of an ion beam at a laser marked target.
      
We have performed a self-consistent band structure calculation of the 1T chalcogenide VSe2 and obtained from the first principles the normal-incidence target current spectrum (TCS) for its (0001) surface.
      
更多          


This paper describes a new pulsed neutron generator. It consists of self-target ceramic minitron, control circuits, high-temperature and high-voltage multiplier. This minitron is characterised by its long-life, stable parameters, better anti-vibration and high operating temperature. In order to increase neutron output of minitron, it is necessary to use the high-voltage multiplier with high target voltage, strong target current and high-power output. The operation principle and specifications about this minitron...

This paper describes a new pulsed neutron generator. It consists of self-target ceramic minitron, control circuits, high-temperature and high-voltage multiplier. This minitron is characterised by its long-life, stable parameters, better anti-vibration and high operating temperature. In order to increase neutron output of minitron, it is necessary to use the high-voltage multiplier with high target voltage, strong target current and high-power output. The operation principle and specifications about this minitron are presented here in.

本文介绍一种新型脉冲中子发生器。它由自成靶陶瓷中子管、控制电路、井下高温大功率倍加器所组成。自成靶陶瓷中子管具有工作温度高、参数稳定性好、工作寿命长、抗震性强等优点。但为了克服其中子产额低的缺点,需要高靶压、大靶流及输出功率大的高压倍加器。本文叙述自成靶陶瓷中子管以及与其配合的控制电路、高压倍加器的工作原理与技术指标。

A Low energy all-element ion implanter is discribed. It's energy range is from 5 to 60 keV and the ion species from 1H+ To 209Bi+.The beam currents on the target for As+ or Se+ at 5 keV are 2~5uA, The size of implanted substrate is φ50.Uniformity of implantation is less than 3%. Implanted temperature is adjustable from R.T to 400℃.The GaAs super thin active layer and silicon shallow junction in the 0.1um range or below has been obtained.

本文介绍了一台低能全元素离子注入机。它的能量范围为5~60keV;离子品种是从~1H到~(209)Bi;最低能量5keV的As~+、Se~+等重离子的靶流为2~5μA;注入靶片φ50;注入均匀度σ<3%;注入温度:室温~400℃可调。已制备出0.1μm以下的GaAs超薄有源层和硅超浅结。

Let CP-n and QP-n denote the complex proj ec tive space and quaternionic projective space. The stability of harmonic maps fro m CP-n(QP-n) or to CP-n(QP-n) are studied, and two nonexistence theo rems are obtained.

研究以复射影空间CPn 和四元数射影空间QPn 为始流形或靶流形的调和映照的稳定性 ,得到了两个不存在性定理 .

 
<< 更多相关文摘    
图标索引 相关查询

 


 
CNKI小工具
在英文学术搜索中查有关靶流的内容
在知识搜索中查有关靶流的内容
在数字搜索中查有关靶流的内容
在概念知识元中查有关靶流的内容
在学术趋势中查有关靶流的内容
 
 

CNKI主页设CNKI翻译助手为主页 | 收藏CNKI翻译助手 | 广告服务 | 英文学术搜索
版权图标  2008 CNKI-中国知网
京ICP证040431号 互联网出版许可证 新出网证(京)字008号
北京市公安局海淀分局 备案号:110 1081725
版权图标 2008中国知网(cnki) 中国学术期刊(光盘版)电子杂志社