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自旋转磨削
相关语句
  rotational grinding
     Study on Simulation and Experiment of Ground Wafer Shape in Rotational Grinding Method
     硅片自旋转磨削面型仿真与实验研究
短句来源
     In this paper, based on rotational coordinates method, a theoretical model of ground wafer shape in rotational grinding process is developed in which many critical factors including the parameters of a porous ceramic vacuum chuck dressing and silicon wafer grinding etc.
     本文综合考虑硅片夹持系统中真空吸盘修整参数以及硅片磨削参数等多种因素,建立了硅片自旋转磨削面型的理论模型;
短句来源
  wafer rotation grinding
     Finally, according to a serial of single-factor experiments in wafer rotation grinding, the relationship between the grinding parameters and the SSD of the wafer is researched, and the research results will provide worthy reference for optimizing the wafer grinding parameters.
     最后,通过几组单因素试验,研究了自旋转磨削方式下磨削参数与磨削硅片亚表面损伤深度之间的关系,得到了磨削参数对硅片亚表面损伤深度的影响规律以及影响程度,为磨削工艺参数的优化提供了有力的参考依据。
短句来源
     Analysis of Kinematic Geometry on Wafer Rotation Grinding Processes
     硅片自旋转磨削的运动几何学分析
短句来源
     By use of a wafer rotation grinding machine, the influence of the main process factors including the grit size of the diamond grinding wheel, the rotational speed of the wafer chuck table, the rotational speed and the down teed rate of the cup grinding wheel on the material removal rate, spindle motor current and wafer surface roughness in grinding of large size wafer are experimentally investigated.
     利用基于自旋转磨削原理的硅片超精密磨床,通过试验研究了砂轮粒度、砂轮转速、工件转速及砂轮进给速度等主要因素对材料去除率、砂轮主轴电机电流以及磨削后硅片表面粗糙度的影响关系。
     By the principle of reversal process, the formula of material removal rate (MRR) in wafer rotation grinding process is deduced. The relationship between MRR and the grinding parameters is given.
     在反转法的原理上,建立了硅片自旋转磨削材料去除率的理论模型,推导了材料去除率公式,分析了磨削工艺参数与材料去除率的关系。
短句来源
     This paper mainly discusses the manufacturing technique of smaller diameter silicon wafers, as well as the principle and characteristic of silicon wafermanufacturing based on the wafer rotation grinding method for larger diameter silicon wafer.
     文章主要论述了小直径硅片的制造技术以及适应大直径硅片生产的硅片自旋转磨削法的加工原理和工艺特点。
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     The relationship between grinding marks and the grinding parameters is analyzed. The cutting trajectories of grits on the wafer are predicted by computer simulation.
     本文建立了硅片自旋转磨削的运动几何学模型,分析了磨削参数与磨削纹理的关系,并对磨粒磨削运动轨迹进行了计算机仿真和预测;
短句来源
     Through the model, computer simulation software about ground wafer shape is developed with VC++ 6.0 and OpenGL.
     并应用VC++6.0编程技术和OpenGL三维图形库开发了硅片磨削面型仿真软件,对真空吸盘修整面型以及硅片自旋转磨削面型进行了计算机仿真和预测;
短句来源
     GRINDING OF LARGE SIZE SILICON WAFER ON A WAFER-ROTATING GRINDING MACHINE
     大尺寸硅片自旋转磨削的试验研究
短句来源
     The critical depth of cut for diamond grains in the grinding process with 3000# mesh diamond wheel was obtained as well.
     对硅片磨削过程的磨粒切削深度进行了分析,建立了硅片自旋转磨削方法的磨粒切削深度模型,并进行了实验验证; 建立了硅片自旋转磨削方法的砂轮临界切削深度模型。
短句来源
     Based on adequate analysis of research background, the rotation ground wafer surface layer damage is studied in this paper.
     本文在深入分析硅片加工表面层损伤的研究现状及存在问题的基础上,对硅片自旋转磨削加工表面层损伤进行了研究。 论文的主要研究工作有:
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As IC chips are fast developing toward higher density, higher performance and smallersize, to meet the demands of IC package, back thinning of the patterned wafer is one of most impor-tant procedure in the backend of semiconductor manufacturing process. When the thickness of primewafer increase corresponding to larger diameter of wafer and the chip become thinner because ofrequirement of advanced IC package technology, back grinding is applied as main back thinningtechnology. In this paper, common back thinning...

As IC chips are fast developing toward higher density, higher performance and smallersize, to meet the demands of IC package, back thinning of the patterned wafer is one of most impor-tant procedure in the backend of semiconductor manufacturing process. When the thickness of primewafer increase corresponding to larger diameter of wafer and the chip become thinner because ofrequirement of advanced IC package technology, back grinding is applied as main back thinningtechnology. In this paper, common back thinning technologies are discussed, the principle, charac-teristics and key technology of the wafer back grinding based on the wafer rotation grinding methodare described in detail, and the new evolutions of the wafer back grinding facing the new challengesare introduced.

集成电路芯片不断向高密度、高性能和轻薄短小方向发展,为满足IC封装要求,图形硅片的背面减薄成为半导体后半制程中的重要工序。随着大直径硅片的应用,硅片的厚度相应增大,而先进的封装技术则要求更薄的芯片,超精密磨削作为硅片背面减薄主要工艺得到广泛应用。本文分析了几种常用的硅片背面减薄技术,论述了的基于自旋转磨削法的硅片背面磨削的加工原理、工艺特点和关键技术,介绍了硅片背面磨削技术面临的挑战和取得的新进展。

By using a wafer-rotating grinding machine,the influence of the main process factors including grit size of diamond grinding wheel,rotating speed of the wafer chuck table,rotating speed and the down feed rate of the cup grinding wheel on the material removal rate,spindle motor current and wafer surface roughness in grinding large size wafer are experimentally investigated. The results show that,when increasing the feed rate of the grinding wheel,decreasing the rotating speed of the wafer chuck table and using...

By using a wafer-rotating grinding machine,the influence of the main process factors including grit size of diamond grinding wheel,rotating speed of the wafer chuck table,rotating speed and the down feed rate of the cup grinding wheel on the material removal rate,spindle motor current and wafer surface roughness in grinding large size wafer are experimentally investigated. The results show that,when increasing the feed rate of the grinding wheel,decreasing the rotating speed of the wafer chuck table and using coarser grit grinding wheel,the material removal rate in the wafer rotating grinding increase,the feed rate of the grinding wheel has greater influence on the material removal rate;when suitably increasing the rotating speed of the grinding wheel,decreasing the feed rate of the grinding wheel and using finer grit grinding wheel,the wafer surface roughness can be reduced;there exists a critical rotating speed of the grinding wheel (about 2300rpm),beyond which the material removal rate evidently decreases and the spindle motor current and wafer surface roughness steeply increase;when the grit size of the grinding wheel is finer than #2000, the material removal rate decreases and the wafer surface roughness has no obvious improvement.

利用基于自旋转磨削原理的硅片超精密磨床 ,通过试验研究了砂轮粒度、砂轮转速、工件转速及砂轮进给速度等主要因素对材料去除率、砂轮主轴电机电流以及磨削后硅片表面粗糙度的影响关系。研究结果表明 ,增大砂轮轴向进给速度和减小工件转速 ,采用粗粒度砂轮有利于提高磨削硅片的材料去除率 ,砂轮轴向进给速度对材料去除率的影响最为显著 ;适当增大砂轮转速 ,减小砂轮轴向进给速度 ,采用细粒度砂轮可以减小磨削表面粗糙度 ;在其它条件一定的情况下 ,砂轮速度超过一定值会导致材料去除率减小 ,主轴电机电流急剧增大 ,表面粗糙度变差 ;采用比 #2 0 0 0粒度更细的砂轮磨削时 ,材料去除率减小 ,硅片表面粗糙度没有明显改善。

As IC's technique advances, integrated circuit chips are developing toward higher density, higher performance and higher integration. The conventional silicon wafers manufacturing technique chiefly suited to the production of smaller diameter ( ≤200 mm ) silicon wafers .With the application of larger diameter silicon wafer, high precision grinding is widely used for its manufacturing. This paper mainly discusses the manufacturing technique of smaller diameter silicon wafers, as well as the principle and characteristic...

As IC's technique advances, integrated circuit chips are developing toward higher density, higher performance and higher integration. The conventional silicon wafers manufacturing technique chiefly suited to the production of smaller diameter ( ≤200 mm ) silicon wafers .With the application of larger diameter silicon wafer, high precision grinding is widely used for its manufacturing. This paper mainly discusses the manufacturing technique of smaller diameter silicon wafers, as well as the principle and characteristic of silicon wafermanufacturing based on the wafer rotation grinding method for larger diameter silicon wafer.

随着IC技术的进步 ,集成电路芯片不断向高集成化、高密度化及高性能化方向发展。传统的硅片制造技术主要适应小直径 (≤ 2 0 0mm)硅片的生产 ;随着大直径硅片的应用 ,硅片的超精密磨削得到广泛的应用。文章主要论述了小直径硅片的制造技术以及适应大直径硅片生产的硅片自旋转磨削法的加工原理和工艺特点。

 
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