SRO layer is deposited on n type Si substrate by LPCVD technique using SiH 4 and N 2O gas mixture as deposition reactant with gas flow ratio of R =/=30.High frequency C V measurements are performed to study the charge trapping effect.
It is found that,for n type Si substrate,positive charges can be trapped in the SRO layer with charge density of 3 0×10 11 cm -2 .A simple model based on the potential distribution and the formation of induced pn junction under the stressing electrodes is proposed to interpret the experimental results.
We report the experimental results of photothermal ionization spectra of the splittingground state of phosphorus,in n-type Si sample with Phosphorus concentration of the order of10~(13) cm~(-3). The value of the ground splitting is accurately determined as 6△c=12.95meV;
Cu/Co Nanomultilayers were prepared on n-type Si(111) substrate by double-bath method in bo- ric acid plating solution and the technical conditions were determined.
Deep traps in n-Si induced by B~+ (200keV, 2.5×10~(11)cm~(-2) and P~+(240keV, 4.4×10~(11)cm~(-2) implantation are reinvestigated by an extended DLTS system of fast current DLTS andlow temperature refrigerator.For B~+ implanted samples,three new electron traps with E_(?)
Polycrystalline Bi 4Ti 3O 12 thin films were prepared by chemical solution deposition technique on n Si(100)( ρ =6~9 Ω·cm) using bismuth nitrate and titanium butoxide as starting material.
The Si_SiO x N y _Al capacitors have been fabricated on both 〈100〉 and 〈111〉oriented Si substrates by the tungsten_halogen lamps thermal RTN. The electron current transporting from the n_type Si accumulation layer into the SiO x N y ultrathin films has been measured in both the lower electric field region and the F_N region.
The DLTS and Van der Pauw methods are used to investigate the production of Ec-0.37 eV centers responsible for the formation of high-resistivity layers in n-type Si irradiated with electrons and annealed in the temperature range 80-320 °C.
The behavior of the electron density at the Si/SiO2 interface with temperature is investigated by measuring the rf conductivity of band-edge surface electronic channels that shunt Schottky barriers in n-type Si.
A new method for measuring the capture cross sections of interface states is sug-gested by using transient capacitance technique,and this method has been used tomeasure the eletron capture rates and cross sections of the interface states at n-typeSi-SiO_2 interface.The results show that the electron capture cross section stronglydepends on the energy,i.e.σ_n almost exponentially decreases with energy towards theedge of the conduction band except for the interval of 0.53 to 0.38 eV from the con-duction band....
Deep traps in n-Si induced by B~+ (200keV, 2.5×10~(11)cm~(-2) and P~+(240keV, 4.4×10~(11)cm~(-2) implantation are reinvestigated by an extended DLTS system of fast current DLTS andlow temperature refrigerator.For B~+ implanted samples,three new electron traps with E_(?)(0.16), E_7 (0.15) and E_(?)(0.08) are reported. For P~+ implanted samples,two new electron trapsof E_7 (0.15) and E_(?)" (0.09) are reported. E (0.15) which appears in both P~+ and B~+ implantedsamples with large concentration is tentatively...
The MeV high energy ion implantation experiment is first reported do- mestically. The p~+-type buried layers of boron in silicon samples are made by implanting boron ions of 1~3 MeV energy with doses of 1×10~(13)~5×10~(15) cm~(-2).In the meanwhile, the n-p-n structure is produced rapidly. The im- planted samples under different annealing conditions are inverstigated mainly through automatic spreading resistance probe measurement, MOS structure C-V electrical properties measurment, TEM and TED observation. I...
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