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滞流层
相关语句
  stagnant layer
     By theoratical analysis and experimental research,it's certain that in the process of th epitaxial growth of silicon by the reduction Sicl_4-H_2 the difference of the ethickness of the stagnant layer over the silicon wafers is the main reason to cause the difference of the thickness of the epitaxial layers.
     本文通过理论分析和实验研究确定:在卧式反应室中 SiCl_4—H_2还原法生长硅外延层的过程中,硅片上面滞流层厚度一致性差异是导致硅外延层生长厚度一致性差的重要因素。
短句来源
     Fringe Effect During EPI/Polysilicon Co-Deposition and a Model of Two-Dimensiorlal Diffusion in the stagnant Layer
     单晶硅/多晶硅同步定积过程中的边缘效应及二维扩散滞流层模型
短句来源
     In this paper the fringe effect is explained by a horizontal diffusional flow, and a semiquantitative estimation is made by means of a two-dimensional diffusion model in the stagnant layer.
     本文认为边缘效应的起因在于反应物沿衬底表面的水平扩散流,并提出了一个二维扩散滞流层模型。 从这个模型出发,可以半定量地估计各工艺参数与边缘效应的关系,理论与实验观察很好地一致。
短句来源
  “滞流层”译为未确定词的双语例句
     It is believed that the silicon growth is carried out by the diffusion of the homogeneous reaction products towards the substrate and the accumulation on it.
     作者认为硅烷外延生长和四氯化硅外延不同,其生长机制是硅烷气相分解产物通过滞流层向衬底的定向扩散并在衬底上堆积.
短句来源
     Stapnant layer was observed and linear relation between slope(k) of the initial dissolution curve and square root of stirring speed was demonstrated.
     药物释放有明显的滞流层现象。 释药初期累积溶出量对时间变化的斜率(k)与搅拌速率的平方根的倒数呈直线关系。
短句来源
     Catalyst fines carried by the gas and oil drops with coking potential entered the stagnation layer acted by various factors such as turbulent diffusion and secondary turbulence in the annular space of the cyclone, and deposited on the external wall surface of the exit-tube especially along the region of pressure-gradient.
     具有结焦倾向的油气液滴和细催化剂颗粒在气流的湍流扩散和环行空间二次涡等多种因素作用下进入"滞流层"并沉积在升气管表面,尤其是顺压力梯度区域。
短句来源
  相似匹配句对
     sliding layer (D);
     D滑移带 ;
短句来源
     (3) syllablic tier;
     (3)音节;
短句来源
     Fringe Effect During EPI/Polysilicon Co-Deposition and a Model of Two-Dimensiorlal Diffusion in the stagnant Layer
     单晶硅/多晶硅同步定积过程中的边缘效应及二维扩散滞流模型
短句来源
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  stagnant layer
The rate of unsteady-state evaporation of a stagnant layer of methanol-water, formic acid-water, ethanol-isopropanol, methanol-ethanol, and methanol-isopropanol binary solutions into an inert gas (helium or argon) is studied in a closed system.
      
However, the Nusselt number did not show a linear output with the height of the enclosure, since a top conduction lid or stagnant layer was induced over a certain height of the enclosure.
      
A comparison of the two lakes shows the importance of a so-called semi-stagnant layer.
      
An analysis is presented for the transient cooling or heating of a stagnant layer of hot radiating gas surrounded by a cold gas capable of absorbing and emitting radiation.
      
One anoxic layer from 20 to 100 m which is occasionally ventilated by a flow over the sill (which has a depth of 2.5 m), and finally a stagnant layer below 100 m.
      
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Experiments were carried out in which monocrystalline and polycrystalline silicon are simultaneously deposited on Si substrates selectively covered with SiO-2 or Si-3N-4 film.The fringe effect of abnormal nucleation on a narrow area of SiO-2 near SiO-2/Si boundary is observed in a wide range of experimental conditions for SiO-2/Si substrates, but it does not take place on Si-3N-4/Si substrates. In this paper the fringe effect is explained by a horizontal diffusional flow, and a semiquantitative estimation is...

Experiments were carried out in which monocrystalline and polycrystalline silicon are simultaneously deposited on Si substrates selectively covered with SiO-2 or Si-3N-4 film.The fringe effect of abnormal nucleation on a narrow area of SiO-2 near SiO-2/Si boundary is observed in a wide range of experimental conditions for SiO-2/Si substrates, but it does not take place on Si-3N-4/Si substrates. In this paper the fringe effect is explained by a horizontal diffusional flow, and a semiquantitative estimation is made by means of a two-dimensional diffusion model in the stagnant layer.

在选择复盖SiO_2或Si_■N_4的硅衬底上,进行了单晶硅和多晶硅的同步淀积实验。对于SiO_2-Si衬底,在相当广泛的实验条件下,观察到在SiO_2-Si边界附近存在着异常核化现象。即边缘效应,而在Si_3N_4-Si衬底上则不出现边缘效应。本文认为边缘效应的起因在于反应物沿衬底表面的水平扩散流,并提出了一个二维扩散滞流层模型。从这个模型出发,可以半定量地估计各工艺参数与边缘效应的关系,理论与实验观察很好地一致。

By theoratical analysis and experimental research,it's certain that in the process of th epitaxial growth of silicon by the reduction Sicl_4-H_2 the difference of the ethickness of the stagnant layer over the silicon wafers is the main reason to cause the difference of the thickness of the epitaxial layers.In the experimental research,we get a regular curve for the growth of epitaxial layers.According to this curve,we made some selections among the technological condictions of the growth of the epitaxial layers.We...

By theoratical analysis and experimental research,it's certain that in the process of th epitaxial growth of silicon by the reduction Sicl_4-H_2 the difference of the ethickness of the stagnant layer over the silicon wafers is the main reason to cause the difference of the thickness of the epitaxial layers.In the experimental research,we get a regular curve for the growth of epitaxial layers.According to this curve,we made some selections among the technological condictions of the growth of the epitaxial layers.We have made a good improvement in the thickness consistence of the epitaxial layer,in prevention of the crown of the edge of the epitaxial layer,and in the elevation of the technical level.

本文通过理论分析和实验研究确定:在卧式反应室中 SiCl_4—H_2还原法生长硅外延层的过程中,硅片上面滞流层厚度一致性差异是导致硅外延层生长厚度一致性差的重要因素。在实验研究中得出了外延生长的一些规律曲线;根据这些曲线对外延生长的工艺条件进行了选择,在改善外延层厚度一致性、防止外延片翘边、提高工艺水平等方面均取得较明显的效果。

This paper studies the formation mechanism of spray-welding over lay, especially the way chemical inhomogeneity forms near the fusion line, presents the dividing manner of the characteristic zones for plasma spraywelding overlay and analyses the major factors which influence the formation of the partically melted zone in welded overlay. Conclusions are obtained as follows: 1) The characteristic zones of plasma spraywelding overlay are divided into mixed Zone, uncompletely mixed zone, fusion line, heataffected...

This paper studies the formation mechanism of spray-welding over lay, especially the way chemical inhomogeneity forms near the fusion line, presents the dividing manner of the characteristic zones for plasma spraywelding overlay and analyses the major factors which influence the formation of the partically melted zone in welded overlay. Conclusions are obtained as follows: 1) The characteristic zones of plasma spraywelding overlay are divided into mixed Zone, uncompletely mixed zone, fusion line, heataffected zone and the unaffected base metal. Although paretically melted zone sometimes exists in welded overlay, it is not the major character. 2) The existance of partically melted zone in plasma spraywelding overlay is influenced by the material quality of the base metal and the spraywelding technology. when the latter is strictly controlled, the formation of partically melted zone can be avoided 3) The uncompletely mixed zone in welded overlay mainly results from the existance of stagnant layer at the juncture of base metal and welded overlay, and meanwhile, liquid phase and solid phase diffusions have a certain influence on it too. Their comprehensive action causes the chemical inhomogeneity in this region and the composition of the region is decided basically by the average composition of the overlay.

本文探讨了等离子喷焊层的形成机理,特别是熔合线处化学不均匀性的产生方式。提出了等离子喷焊层特征区域的划分方法,分析了焊层中局部熔化区产生的主要因素。研究结果表明: 1.等离子喷焊层的特征区域可划分为混合区、不完全混合区、熔合线、热影响区和未受影响的基体金属。虽然在焊层中有时会出现局部熔化区,但它不是焊层的主要特征。 2.等离子喷焊层中,局部熔化区的出现,主要受基体金属材质和喷焊工艺的影响。通过控制喷焊工艺,可以避免局部熔化区的产生。 3.喷焊层中不完全混合区,主要由于焊层和基体金属结合处滞流层的存在而产生,液相扩散、固相扩散也产生一定的影响。它们的综合作用,导致了这个区域的化学不均匀性。而这个区域的化学成分,则基本上取决于焊层中的平均成分。

 
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