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体硅电路
相关语句
  bulk silicon circuit
     Diam ond film w as used as buried insulator in silicon on diam ond ( S O D) technology. 54 H C T03 C M O S/ S O D integrated circuit w as fabricated by using S O D w afer. The recovery character istics of the S O D circuit under radiation w ere studied, and the results show that the recovery ability ofthe S O D circuit is clearly higher than that of bulk silicon circuit.
     以金刚石膜作为绝缘埋层, 利用金刚石膜上的薄层硅( S O D)技术, 制作 54 H C T03 C M O S/ S O D 结构的集成电路. 对该电路在辐照后的恢复特性进行研究. 结果表明, S O D 电路在大剂量辐照后的恢复能力明显强于体硅电路
短句来源
     Diamond film with high resistivity and thermal conductivity is used as buried insulator in SOD (silicon on diamond) technology. 54HCT03 CMOS/SOD integrated circuit is fabricated by using SOD wafer. The high temperature characteristics of SOD circuit are studied, and the results show that the SOD circuit can be used at the temperature of 350℃, this working temperature is clearly higher than that of the bulk silicon circuit.
     采用具有高导热、高绝缘等优异物理性能的金刚石膜作为绝缘理层,利用金刚石膜上的薄层硅(SOD)技术,制作了54HCTO3CMOS/SOD结构的集成电路.对该电路高温下的工作特性进行了研究.结果表明SOD电路在350℃下仍具有正常的逻辑功能,其工作温度明显高于体硅电路
短句来源
     The test results show that the operating frequency of the 1.2 micron SOI CMOS circuit is 3 times than that of the bulk silicon circuit . The static power dissipation is only 10 percent and the propagation delay per-stage of 101-stage ring oscillators is 20 percent of the bulk silicon ones. A device with high-speed and low-power dissipation was achieved.
     测试结果表明:与同类体硅电路相比,工作频率提高三倍,静态功耗仅为体硅电路的10%,且电路的101级环振总延迟时间也仅为体硅电路的20%,实现了电路对高速低功耗的要求。
短句来源
  bulk circuits
     High\|performance SOI devices and ring oscillators with 0 8μm channel length are fabricated and characterized. The propagated delays per stage of the ring oscillator at 3V and 5V supply voltage are 82ps and 281ps respectively, which is much higher than that of the corresponding bulk circuits.
     采用 SOI/CMOS工艺成功地研制出沟道长度为 0 .8μm的 SOI器件和环振电路 ,在 5V和 3V电源电压时 51级环振的单门延迟时间分别为 82 ps和 2 81 ps,速度明显高于相应的体硅电路 .
短句来源
  “体硅电路”译为未确定词的双语例句
     Through the experiments,we have found that the SOT /CMOS AID converter have good radiation hardness.
     通过测试可以看出CMOS/SOI A/D转换器的抗核加固性能明显优于体硅电路
短句来源
     Silicon on Insulator (SOI) Technology was originally invented for the niche of radiation-hard circuits.
     与传统的体硅电路比较起来,SOI电路具有高速、低压、低功耗、抗辐照、耐高温等优点。
短句来源
     The devices include CMOS/Si, CMOS/SOS,CPU,GaAs MESFET,MIMIC,VHSIC and CCD.
     涉及的器件包括:CMOS/体硅电路,CMOS/SOS电路,GaAsMESFET及其电路,电荷耦合器件等。
短句来源
  相似匹配句对
     A Tunneling-Based Accelerometer in Bulk Silicon Processes
     隧道加速度计
短句来源
     Fabrication of the Bulk Silicon MOEMS Optical Switch Array
     MOEMS阵列光开关的制作
短句来源
     Analysis of the interface circuit of silicon micromachined gyroscope
     微陀螺仪接口电路分析
短句来源
     The circuit can be used to prevent latchup in conventional bulk-Si CMOS devices.
     运用计算机仿真分析技术开发的抗闭锁电路,可以实现CMOS器件的闭锁抑制。
短句来源
     The circuits adopt SOI (Silicon On Insulator) instead of body Silicon, So the circuits have the advantages as high speed, anti-irradiation.
     电路采用了SOI(SiliconOnInsulator)材料代替常规的,使电路具有高速、抗辐照的特点;
短句来源
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Based on the radiation environments of nature and nuclear,radiation effects and hardness technology of microelectronic devices used in satellite are analysed. The devices include CMOS/Si, CMOS/SOS,CPU,GaAs MESFET,MIMIC,VHSIC and CCD.

在介绍卫星天然辐射环境和人工核爆辐射环境的基础上,着重分析应用于卫星电子系统中的微电子器件的辐射效应,包括电离辐射效应、瞬态辐射效应和中子辐射效应,并归纳出各种器件抗辐射加固的主要途径和具体方法。涉及的器件包括:CMOS/体硅电路,CMOS/SOS电路,GaAsMESFET及其电路,电荷耦合器件等。

Diamond film with high resistivity and thermal conductivity is used as buried insulator in SOD (silicon on diamond) technology. 54HCT03 CMOS/SOD integrated circuit is fabricated by using SOD wafer. The high temperature characteristics of SOD circuit are studied, and the results show that the SOD circuit can be used at the temperature of 350℃, this working temperature is clearly higher than that of the bulk silicon circuit.

采用具有高导热、高绝缘等优异物理性能的金刚石膜作为绝缘理层,利用金刚石膜上的薄层硅(SOD)技术,制作了54HCTO3CMOS/SOD结构的集成电路.对该电路高温下的工作特性进行了研究.结果表明SOD电路在350℃下仍具有正常的逻辑功能,其工作温度明显高于体硅电路

Diam ond film w as used as buried insulator in silicon on diam ond ( S O D) technology.54 H C T03 C M O S/ S O D integrated circuit w as fabricated by using S O D w afer. The recovery character istics of the S O D circuit under radiation w ere studied, and the results show that the recovery ability ofthe S O D circuit is clearly higher than that of bulk silicon circuit. Annealing technique is advandageousto the quick recovery of the radiated S O D circuit.

以金刚石膜作为绝缘埋层, 利用金刚石膜上的薄层硅( S O D)技术, 制作 54 H C T03 C M O S/ S O D 结构的集成电路. 对该电路在辐照后的恢复特性进行研究. 结果表明, S O D 电路在大剂量辐照后的恢复能力明显强于体硅电路; 常规非辐照环境下的高温退火工艺更有利于辐照后的 S O D 电路的快速恢复

 
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