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nmos电路
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  nmos circuits
     Structure Analysis of Master/Slave Ternary Flip flops and Its Realization with nMOS Circuits
     三值主从触发器结构分析及其nMOS电路实现
短句来源
     Based on this, several binary and ternary nMOS circuits and ECL circuitswith parallel switches are designed at switch-level.
     在此基础上,论文从开关级设计了采用并联开关技术的适合于低电压电源工作的二值和三值nMOS电路和ECL电路。
短句来源
     This paper analyses the cause that the traditional multiple-valued NMOS circuits with depletion N-MOSFET as load have low speed and low driving power. An improved design of ternary NMOS output circuit is proposed based on the signal transmission characteristics of the N-MOSFET.
     本文分析了传统的以耗尽型晶体管作负载的多值NMOS电路工作速度低及驱动能力差的原因,并根据NMOS晶体管对信号的传输特性提出了三值NMOS电路输出级的改进设计.
短句来源
     Comparison between two kinds of threshold detection in multivalued nMOS circuits by controlling geometry ratio and multilevel threshold voltage shows that the latter has better transfer characteristics.
     对多值nMOS电路中阈值检测所采用的两种方法,即改变几何比和多阈值法进行比较的结果表明:多阈值法具有更好的转移特性.
短句来源
     The cause of the digital circuits performance reduction and even fail to operate at low supply voltage was analyzed, then, two methods for converting cascade switches to parallel switches which are suitable to design nMOS circuits at low voltage were proposed. Using these methods, several ternary nMOS circuits at low voltage with parallel switches were designed at switchlevel.
     在分析了采用低电压工作时数字电路性能下降甚至不能正常工作的原因后,提出了两种适合于低电压nMOS电路设计的串联开关转换成并联开关技术,并从开关级具体设计了低电压三值nMOS电路.
短句来源
  “nmos电路”译为未确定词的双语例句
     Improved Design of Ternary NMOS Output Circuit
     三值NMOS电路输出级的改进设计
短句来源
     The Application of the Simulation in NMOS Circuit Redesign
     仿真在NMOS电路设计中的应用
短句来源
     This dissertation proceed from the principle of that reducing supply voltage of circuitsis the most efficient way to decrease the dissipation of circuits, and first, discuss thedifficult of conventional nMOS and ECL circuits performing at low-voltage in standardtechnology which do not reduce the threshold voltage of the transistor, and point out this isdue to the structure of cascade switches, so, when supply voltage is reduced to a certainmagnitude, the circuit will not perform correctly.
     论文根据降低电源电压是降低功耗的最有效手段这一原理出发,首先讨论了在采用不降低管子阈值的标准工艺时,传统nMOS电路和ECL电路在低电压下工作时遇到的困难,指出这是由于传统的nMOS电路和ECL电路采用了串联开关结构造成的,因而在电压低到一定值后,电路就不能正常工作。
短句来源
     We adopt down-top-down method and our task is to design a coprocessor that is compatible with Intel 8087.8087 is the first product of Intel 80X87, it is the basis for the improvement of the 80X87 .We chose 8087 as the entrance of our research, completely analyzed it and change it from NMOS circuit to CMOS circuit. In this article, I introduce a reverse analysis and top-down design flow.
     本设计采用逆向提取,正向设计的设计方法,设计与Intel 8087指令和时序完全兼容的协处理器。 考虑到8087是Intel 80X87协处理器系列的第一代产品,它是其他改进的80X87系列的基础,因此选择8087作为研究的切入点,对其进行全面的分析,并将其原NMOS电路改为CMOS电路。
短句来源
     The estimated values agree quite well with tests and the results indicate that VVMOS power FET is compatible with NMOS integrated circuits even by conventional processing technology.
     结果指出,即使用常规工艺制造技术把VVMOS功率晶体管相容集成到NMOS电路中去亦是可能的.
短句来源
更多       
  相似匹配句对
     An Analysis of Multivalued nMOS Basic Circuit Units
     多值nMOS基本单元电路分析
短句来源
     The Application of the Simulation in NMOS Circuit Redesign
     仿真在NMOS电路设计中的应用
短句来源
     Basic Direct Current Circuits
     直流电路
短句来源
     Communication Circuits
     通信电路
短句来源
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When VVMOSFET and NMOSFET are integrated into a monolithic integrated circuit, the values of threshold voltage tolerance between them are estimated theoretically and compared with process tests.The estimated values agree quite well with tests and the results indicate that VVMOS power FET is compatible with NMOS integrated circuits even by conventional processing technology.

本文介绍了VVMOSFET和NMOSFET单片集成时阈值电压容差的理论估算和工艺试验结果,二者符合得较好.结果指出,即使用常规工艺制造技术把VVMOS功率晶体管相容集成到NMOS电路中去亦是可能的.

A new device interpolation modeling is added into SPICE circuit simulation pro-gram by introducing one to three-dimensional 2-order B spline function in it.Ther-fore the device simulation fumction in SPICE is extended and the circuit simulation ac-curacy in SPICE is enhanced.The characteristics simulation results of tunnel diodeoscillator and 3 tμm E/E NMOS circuit by using this modified SPICE program demon-strate the above-mentioned superiority of this new device modeling.

通过在SPICE通用电路模拟程序中引入一至三维的二次B样条函数,使该程序在保持原有器件解析模型的同时,又增加了新的器件插值模型,从而扩大了SPICE程序的器件模拟功能,提高了SPICE程序的电路模拟精度.采用这种改进的SPICE程序对隧道二极管振荡电路和 3μm E/E NMOS电路的特性模拟结果显示了这种新器件模型的上述优越性.

This paper analyses the cause that the traditional multiple-valued NMOS circuits with depletion N-MOSFET as load have low speed and low driving power. An improved design of ternary NMOS output circuit is proposed based on the signal transmission characteristics of the N-MOSFET. Taking the ternary NMOS inverter as an example, we have made computer simulation with SPICE-Ⅱ. The results show that the circuit designed in this paper has higher speed and better driving power than that of the traditional one.

本文分析了传统的以耗尽型晶体管作负载的多值NMOS电路工作速度低及驱动能力差的原因,并根据NMOS晶体管对信号的传输特性提出了三值NMOS电路输出级的改进设计.以三值NMOS反相器设计为例,用SPICE-Ⅱ进行计算机模拟比较.结果表明,本文所设计的电路较传统设计具有工作速度高,驱动能力强等优点.

 
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