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隔离电阻
相关语句
  isolation resistance
     The isolation resistance is about 60Q.
     隔离电阻约60Ω。
短句来源
     An isolation resistance of 10 kΩ is required by the integrated device researched.
     分析得到,EML的隔离电阻阻值只有达到10 kΩ量级,才能够忽略电泄漏对器件特性的影响。
短句来源
     If the power density oflaser beams used is higher than the threshold value,grooves with smooth edges,no residuum and their isolation resistance higher than 100 kΩ can be obtained.
     用大于该阀值的激光功率进行刻蚀,可得到边缘平整,其中无淤积物,隔离电阻大于100kΩ 的刻槽。
短句来源
     The simulation is focused on the dependence of the frequency chirp of the integrated laser-modulator on the isolation resistance between laser and modulator.
     该模型同时考虑了激光器与调制器之间的电耦合。 这种由于隔离电阻不够大而导致的电耦合将导致激光器激射波长发生漂移,即产生啁啾。
短句来源
     The simulation is focused on the dependence of the characteristics of the integrated laser-modulator on the isolation resistance between the DFB laser and EA modulator. Great differences for the characteristics of the integrated light sources with different isolation resistances were shown in the simulations.
     该模型考虑了由于隔离电阻不够大而导致的激光器与调制器之间的电耦合,通过对电路模型进行仿真可以看出,对于不同隔离电阻的EML,激光器的阈值电流、调制器的频率响应带宽、集成器件的小信号调制和脉冲调制等多方面特性均有明显不同。
短句来源
更多       
  isolating resistor
     This paper discuss that the performance of the isolating resistor in combiner influence on the work state of solid state module.
     分析了固态组件合成器中隔离电阻性能对组件工作状态的影响。
短句来源
     By means of the calculation and analysis, it shows the performance of the isolating resistor is one of the important factors which limit the solid state module.
     计算与分析表明 ,隔离电阻是制约固态组件性能的重要因素之一。
短句来源
     The isolating resistor between two dividing ports in conventional Wilkinson power combiner is replaced by a structure of coax balun transformer.
     在这种功率合成器中用同轴线Balun阻抗变换器和假负载代替传统的W ilk inson功率合成器中隔离电阻;
短句来源
  “隔离电阻”译为未确定词的双语例句
     To resolve a series of technique problem caused by isolation resitance in power divider at Ka band,we use the CPW ^ CCPW transmission line and Ansoft-Serenade 8.7 engineering software to emulate a power divider at Ka band. The emulation result could satify the engineering demand,and provide a useful reference to realize new millimeter element via new type transmission line.
     为了解决在Ka频段二等分功率分配/合成器中隔离电阻带来的一系列技术问题,应用共面波导和耦合共面波导,利用Ansoft电磁仿真软件仿真设计了二等分功率分配,仿真的结果基本能够满足工程需要,为采用新型传输线实现新的毫米波无源器件提供了参考。
短句来源
     Taking into consideration of ESD, the guard ring is adopted to isolate resistors and capacitors, thus to eliminate the influence in the main circuit by them.
     出于ESD考虑,在输入输出采用保护电路:采用保护环隔离电阻电容,减小其对核心电路的影响。
短句来源
     The infection of the dimension of microstrip line to power capability of devices and the power capability of isolate resistor has been investigated in detail.
     详细研究了微带线尺寸对器件功率容量的影响,以及大功率合成系统中隔离电阻功率容量的量值;
短句来源
     The amplifier having reason structure,precisely and conveniently controlled gain,high insulating resistance,low noise and wide gain flatness range has been proved in the working of the impulse vibration specimen material level detection device.
     通过在冲击振动料位计中的使用 ,证明该方案的程控增益隔离放大器结构合理 ,增益控制准确、方便 ,隔离电阻高 ,噪声低 ,频带平坦。
短句来源
     The isolated resistor in the C level shift structure can be increased by a JFET consisting of a Pwell,Nepi,and P-sub,and the short of a poly field plate(PFP) in the LDMOS and HVJT is avoided by use of a metal field plate(MFP).
     借助Pwell,Nepi,P-sub所形成的JFET效应增加C型结构中隔离电阻; 引入金属场板MFP,防止LD-MOS的栅、漏与高压结终端多晶场板短接.
短句来源
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  isolation resistance
The simulation is focused on the dependence of the frequency chirp of the integrated device on the isolation resistance between laser and modulator.
      
It is only important that the capacitor Cm used on the voltage measurement has constant or very high isolation resistance.
      
Typical electrical isolation resistance between a DFB-LD section and a modulator section was about 5 k.
      
The isolation resistance and the dielectric strength are inherently very high.
      
  isolating resistor
Different from conventional Wilkinson hybrid, the proposed combiner requires no isolating resistor, and is easier fabricated and more suitable for millimeter integrate circuits.
      


A new design of a UHF power divider is suggested, by which the power may be distributed to any N branches in any desired ratios. The equations used to find the values of the wave impedances of the dividing sections and the impedance-transforming sections as well as the isolating resistances are given. In these equations, an arbitrary constant coefficient is contained, which may be selected freely. Furthermore, the methods of finding the wave impedances of the branched coaxial strip lines used as the dividing...

A new design of a UHF power divider is suggested, by which the power may be distributed to any N branches in any desired ratios. The equations used to find the values of the wave impedances of the dividing sections and the impedance-transforming sections as well as the isolating resistances are given. In these equations, an arbitrary constant coefficient is contained, which may be selected freely. Furthermore, the methods of finding the wave impedances of the branched coaxial strip lines used as the dividing line sections are also given.

本文提出一种超高频功率分配器的新方案,可以按任意的比例将功率分配给任意N条支路。给出了求各路分配节和变阻节特性阻抗以及隔离电阻的计算公式,其中含有一个可供灵活选择的任意常系数。文中还给出了求取作为分配节的同轴分支带线的特性阻抗的方法。

The problems in fabricating integrated a-Si solar cells with acousto-opticQ-switched Nd:YAG laser scriber are described.During ITO layer scribing,the power density threshold of laser beams fora given thickness of ITO layer should be considered.If the power density oflaser beams used is higher than the threshold value,grooves with smooth edges,no residuum and their isolation resistance higher than 100 kΩ can be obtained.The crystallization of the material in the area near edges has been examinedby X-ray diffraction...

The problems in fabricating integrated a-Si solar cells with acousto-opticQ-switched Nd:YAG laser scriber are described.During ITO layer scribing,the power density threshold of laser beams fora given thickness of ITO layer should be considered.If the power density oflaser beams used is higher than the threshold value,grooves with smooth edges,no residuum and their isolation resistance higher than 100 kΩ can be obtained.The crystallization of the material in the area near edges has been examinedby X-ray diffraction and laser Raman scattering spectrum.The twice-frequency harmonic laser beam with wavelength of 0.53 μm ismore suitable for scribing a-Si and a-SiC,because the absorption coefficient ofthese materials at 0.53μm is higher than at 1.06μm.It is necessary to increase the efficiency of the frequency multiplier inorder to obtain enough power density of the laser beams.For decreasing the se-ries resistance of integrated a-Si solar cells,the selection of an optimum movingspeed of the sample is very important.For the selective scribing of the metalback electrode,besides controlling the power density of the laser beams,selectinglens with short focus depth and carefully focusing are also very important forpreventing ITO layer beneath the metal electrode from damage.

本文叙述用声光调 Q Nd:YAG 激光制造集成型 a-Si 太阳电池中的问题。在刻蚀 ITO 时,要注意掌握对应于 ITO 薄膜厚度的激光功率密度的阀值。用大于该阀值的激光功率进行刻蚀,可得到边缘平整,其中无淤积物,隔离电阻大于100kΩ 的刻槽。用 X 射线衍射和激光 Raman 谱确定了刻蚀区及其周围的晶化,二次谐波、波长为0.53μm 的激光束对 a-Si、a-SiC 的刻蚀是很有利的,因这些材料对波长0.53μm 的光的吸收系数较大,但必须提高倍频器的效率才能获得有足够功率密度的激光束。为减少集成型 a-Si 太阳电池的串联电阻,应选择适当的激光与样品的相对移动速率。对于金属背电极的选择刻蚀,为不损伤其下的 ITO 层,除控制激光功率密度外,选择短焦深的透镜并仔细调焦亦十分重要。

With two-electrode structure,wave length tuning in single-mode operation was achieved for a DFB laser operating at 1.55nm. The overall cavity length is 250u.m. The isolation resistance is about 60Q. Under a constant total bias current, the lasing wavelength can be tuned electrically over 15 A (190GHz). The side-mode suppression ratio ( SMSR ) is larger than 30dB.

本文介绍1.55μm波长可调谐DFB激光器的结构及特性。激光器腔长为250μm。隔离电阻约60Ω。在总电流恒定时,波长调谐范围超过15A(190GHz)。边模抑制比(SMSR)大于30dB。

 
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