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四极照明
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  “四极照明”译为未确定词的双语例句
     Under 3/4 annular and 3/4 quasar illumination,the lithographic performances for dense lines,semi-dense lines and isolated lines in different parameters of the exposure system are studied and the lithographic performances in different illumination modes are compared.
     在3/4环形照明和3/4四极照明方式下,研究65nm线宽的密集线条、半密集线条、孤立线条在较大曝光系统参数范围内的光刻性能,并对不同照明方式的光刻性能进行了比较。
短句来源
     Simulation of Imaging Quality in 193nm lithography using QUASAR Illumination
     四极照明光刻成像质量仿真研究
     Impact of optical parameters on lithography performance have been studied by lithography simulation. The results are presented for the100nm node under annular illumination and quasar illumination.
     针对分辨力100nm的ArF光刻机,在环形照明和四极照明下,对4种曝光图形结构光刻性能进行了仿真研究。
短句来源
     The DOF due to off-axis illumination increases by 100%~150%,compared to conventional illumination. The better performances are obtained for the isolated lines under the quasar illumination.
     离轴照明的焦深比传统照明提高100%~150%,采用四极照明对孤立线条进行曝光,可以获得更好的光刻性能。
短句来源
     The process window under 3/4 annular and 3/4 quasar illumination at 5 0 0 exposure latitude is explored by optical imaging simulation. Line/space pairs of line-to-space ratio 1∶1(dense pattern), 1∶2(semi-dense pattern), 1∶4(isolated pattern) on binary mask and alternate phase-shifting mask(AltPSM) are consi- dered.
     在3/4环形照明和3/4四极照明方式下,分别选用传统掩模和交替型相移掩模,研究65nm线宽的密集线条、半密集线条、孤立线条在较大的曝光系统参数范围内,对光刻工艺窗口的改善。
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  相似匹配句对
     Simulation of Imaging Quality in 193nm lithography using QUASAR Illumination
     四极照明光刻成像质量仿真研究
     Lighting Design of Clothing Store
     服装店照明
短句来源
     PROGRESS IN DAYLIGHTING AND ELECTRIC LIGHTING FOR BUILDING
     室外照明
短句来源
     Application of Four Poles Circuit Breaker
     四极断路器的应用
短句来源
     Energy Analyser for Quadrupole Field
     四极场能量分析器
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The principle of Off-axis illumination for improving photolithographic resolution and increasing depth of focus is presented. Hopkings imaging theory isused to calculate intensity distribution of space image,and some results of twoillumination types,quadrupole and annular illuminations are given. The calculation results show that the resolution is improved and the DOF is increased on thecondition of off-axis illumination, compared with conventional illumination.

本文阐述了离轴照明提高曝光分辨率和增加焦深的原理,应用Hopkins理论研究了其成像特性。给出了两种离轴照明方式──四极照明和环形照明下的空间像分布,并和传统照明方式下的空间像分布作比较。计算结果说明,采用离轴照明使得曝光分辨率和焦深得到了很大的提高。

Impact of optical parameters on lithography performance have been studied by lithography simulation.The results are presented for the100nm node under annular illumination and quasar illumination.The results show that,under quasar illumination,the good lithography performance of dense line and semi-dense line can be reached if the wave front error of6nm rms,moving standard deviation of8nm,flare of2%,exposure latitude of7%and CD uniformity of can be controlled in the final system.

针对分辨力100nm的ArF光刻机,在环形照明和四极照明下,对4种曝光图形结构光刻性能进行了仿真研究。仿真结果表明,如果光刻物镜在加工装调后的光波像差为6nm,杂散光为2%,工件台运动标准偏差为8nm,曝光量控制在10%,CD≤±10%CD,利用四级照明,可以在较大的焦深范围内(DOF≥0.4~0.5μm)实现满足器件要求的100nm密集线条、半密集线条的光刻成像。当曝光剂量更精确控制到7%,可以在较大的焦深范围内(DOF≥0.4~0.5μm)实现满足器件要求的100nm孤立线条的光刻成像。

The effect of off-axis illumination for ArF immersion lithography is studied at 65 nm node.Under 3/4 annular and 3/4 quasar illumination,the lithographic performances for dense lines,semi-dense lines and isolated lines in different parameters of the exposure system are studied and the lithographic performances in different illumination modes are compared.The results show that in order to reach the required lithographic performance the system settings could be chosen widely for the acceptabe DOF.The DOF due to...

The effect of off-axis illumination for ArF immersion lithography is studied at 65 nm node.Under 3/4 annular and 3/4 quasar illumination,the lithographic performances for dense lines,semi-dense lines and isolated lines in different parameters of the exposure system are studied and the lithographic performances in different illumination modes are compared.The results show that in order to reach the required lithographic performance the system settings could be chosen widely for the acceptabe DOF.The DOF due to off-axis illumination increases by 100%~150%,compared to conventional illumination.The better performances are obtained for the isolated lines under the quasar illumination.

研究了离轴照明对65nm分辨率ArF浸没式光刻的影响。在3/4环形照明和3/4四极照明方式下,研究65nm线宽的密集线条、半密集线条、孤立线条在较大曝光系统参数范围内的光刻性能,并对不同照明方式的光刻性能进行了比较。结果表明,在可用焦深(depthoffocus,DOF)范围内,满足光刻性能要求可以有较大范围的曝光系统参数配置。离轴照明的焦深比传统照明提高100%~150%,采用四极照明对孤立线条进行曝光,可以获得更好的光刻性能。

 
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