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温度调制     
相关语句
  temperature modulation
     Gas Sensor Temperature Modulation Equipment Based on DDS Technology
     基于DDS技术的气体传感器温度调制实验平台
短句来源
     To improve the selectivity of semiconductor gas sensors by using temperature modulation
     用温度调制提高半导体气敏传感器的选择性
     This dissertation pays attention to the selectivity improvement methods of the tin oxide based micro-hotplate gas sensors. Starting from the fabrication and characterization technology of the gas sensors, systematical studies have been performed on the gas sensing mechanism, gas sensor array and temperature modulation techniques, as well as their applications into the detection and analysis of the carbon monoxide and methane gas mixtures.
     本文主要研究微热板式二氧化锡薄膜气体传感器的选择性改善方法,从传感器的制造工艺、性能测试出发,在气敏机理、传感器阵列、温度调制等方面展开了系统的研究,并将其用于一氧化碳和甲烷混合气体的检测和分析。
短句来源
     The subtractive preprocessing method is proposed to restrain the strong signal caused by the temperature variation of the micro-hotplate and to extract the weak signal caused by the dynamic adsorption of gases on thin film surfaces at the temperature modulation modes.
     提出了差值预处理方法,该方法有效抑制了温度调制模式下微热板温度变化引起的强信号对气体传感器动态信号的影响,提取了敏感薄膜表面气体动态吸附引起的气体响应信号。
短句来源
     To realize the temperature modulation of gas sensors, "gas sensor temperature modulation equipment based on DDS technology" is designed, which is able to modulate gas sensors with 4 normal kinds of modulation waveforms and arbitrary waveforms defined by user, while sampling the sensors' response signal in real time.
     为实现对半导体气体传感器的温度调制,研制了“基于DDS技术的气体传感器温度调制实验平台”,该平台能够以4种常用的温度调制电压信号,以及用户定义的任意波形的调制电压信号调制传感器的工作温度,并实时采集传感器的响应数据。
短句来源
  temperature modulated
     The electrical properties of films were measured in temperature modulated mode and in simple temperature ramp mode. The results are used to evaluate the effects of Ag addition,environmental humidity and O 2 partial pressure on the electrical properties of SnO 2 thin films.
     用温度调制方式和锯齿波加热方式研究了薄膜的电学特性 ,讨论了银催化剂、湿度及氧分压对SnO2 电学特性的影响。
短句来源
     The variation of film resistance caused by thermally activated processes and by surface chemistry can be separated from the R T curves measured in temperature modulated mode.
     从温度调制方式下测得的电阻 温度曲线可以区分由热激发过程和由表面反应过程引起的膜电阻变化。
短句来源
     Using this module, the electrical properties and the sensitive mechanism of gas sensing film can be studied in the temperature modulated mode.
     利用这种微结构单元 ,可以在温度调制方式下 ,研究气敏薄膜的电学特性和敏感机理
短句来源
     In this model,the wavelet decomposition is applied for feature extraction from a single temperature modulated semiconductor gas sensor,and the support vector machine is introduced for pattern recognition between the feature variables and gas patterns.
     通过小波分解提取半导体气体传感器在温度调制下的动态响应特性的特征量,分别使用不同核函数和不同结构的支持向量机建立判断特征量与气体种类的模型。
短句来源
  temperature tuning
     Linear Temperature Tuning of a Semiconductor Laser for Optogalvanic Spectroscopy
     用于光电流光谱研究的半导体激光器的线性温度调制
短句来源
  “温度调制”译为未确定词的双语例句
     Measurement of Density Gap State in GD-a-Sic:H Films by Temperature-Modulated-Space-Charge-Limited-Current Method
     用温度调制空间电荷限制电流法研究GD-a-Sic∶H膜的隙态密度
短句来源
     When RBF Neural Network is applied in two kinds of dynamic data fusion, ratio of recognition can be enhanced from 89.7% and 70.4% to 100% and 95.3%, respectively.
     将径向基函数算法应用于处理恒温动态数据和动态温度调制数据时,采用多组预测可将识别率分别由89.7%和70.4%提高到100%和95.3%,可见多组预测的有效性。
短句来源
     At 0.02Hz,in the range of 250~300℃,dynamic response of the sensor to different volume fraction of propane-2-ol,acetyl acetone and ethanol is measured.
     在0.02Hz的调制频率、250~300℃的温度调制范围,测得传感器对不同体积分数异丙醇、乙酰丙酮和乙醇气体的动态响应。
短句来源
     Experimental results showed that high selectivity of the sensor achieved in the range of 250~300℃ and modulating frequency of 0.02 Hz, The quantitative analysis between the pure pesticide gas and mixture was performed by fast Fourier transform (FFT).
     实验结果表明 :在 0 .0 2Hz的调制频率和 2 5 0~ 3 0 0℃的温度调制范围 ,传感器表现出高的选择性和稳定性 ;
短句来源
     In virtue of domino offect of Raman scattering, it's scattering light intensity is modulated by temperature, so Raman scattering light can be considered carrier of temperature information and used for temperature demodulation and system of measure temperature.
     由于Raman散射具有温度效应,其散射光强度受温度调制,可作为温度信息的载体,用于温度解调及测温系统设计。
短句来源
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  temperature modulation
This points to subcritical branching and hysteresis effects in those cases in which the periodicity of the perturbations is determined by external factors (corrugation of the boundary, spatially periodic temperature modulation, etc.).
      
The temperature modulation method is used for the first time, together with the traditional magnetic modulation method, to detect microwave responses in single crystals.
      
Therapeutic temperature modulation in neurocritical care
      
Recent advances in technology have made therapeutic temperature modulation feasible.
      
In this review, current concepts of therapeutic temperature modulation are presented.
      
更多          
  temperature-modulated
The new defect density as well as the related strain-induced modifications of the order parameter are pushed in our experiment up to temperature-modulated damage thresholds.
      
We studied the effect of the crystal thickness employing temperature-modulated differential scanning calorimetry and heat wave spectroscopy, and by carrying out small-angle X-ray scattering experiments for the structural characterization.
      
The glassy dynamics of poly(propylene glycol) (PPG) and poly(dimethyl siloxane) (PDMS) confined to a nanoporous host system revealed by dielectric spectroscopy, temperature-modulated DSC and neutron scattering is compared.
      
For both systems the relaxation rates estimated from dielectric spectroscopy and temperature-modulated DSC agree quantitatively indicating that both experiments sense the glass transition.
      
An array of temperature-modulated semiconductor sensors was used to characterize the headspace above a cell culture.
      
更多          
  temperature modulated
Isolation and analysis of amplified cDNA fragments during detection of unknown polymorphisms with temperature modulated heterodu
      
Reversible melting probed by temperature modulated dynamic mechanical and calorimetric measurements
      
A description of the glass transition measured by temperature modulated differential scanning calorimetry
      
The temperature modulated differential scanning calorimetry (TMDSC) technique can be used for heat capacity spectroscopy in the low frequency range.
      
The glassy dynamics of poly(propylene glycol) (PPG) and poly(methyl phenyl siloxane) (PMPS) confined to nanoporous glasses (pore sizes 2.5-20?nm) investigated by dielectric spectroscopy, temperature modulated DSC and neutron scattering is compared.
      
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  其他


The distribution of the gap state density of GD a-Si_(1-x)C_x∶H and GD a-Si_(1-x)N_x∶H films with layer electrode configuration was measured by the space chargelimited current (SCLC) method,For GD a-Si_(1-x) C_x∶H films (d=1μm),when xwas 0,0.1,0.8,the density of gap states around equilibrium Fermi level N(E_F~0) wasabout 2×10~(15),4×10~(15),6.2×10~(16)/cm~3·eV respectively.While for GD a-Si_(1-x) N_x∶Hfimls (d=1μm) with various nitrogen compositions,x=0,0.05,0.2,N(E_F~0) wasabout 2×10~(15),3×10~(15) and 4.5×10~(16)/cm~3·eV.The...

The distribution of the gap state density of GD a-Si_(1-x)C_x∶H and GD a-Si_(1-x)N_x∶H films with layer electrode configuration was measured by the space chargelimited current (SCLC) method,For GD a-Si_(1-x) C_x∶H films (d=1μm),when xwas 0,0.1,0.8,the density of gap states around equilibrium Fermi level N(E_F~0) wasabout 2×10~(15),4×10~(15),6.2×10~(16)/cm~3·eV respectively.While for GD a-Si_(1-x) N_x∶Hfimls (d=1μm) with various nitrogen compositions,x=0,0.05,0.2,N(E_F~0) wasabout 2×10~(15),3×10~(15) and 4.5×10~(16)/cm~3·eV.The relationship between distribution ofgap state and thickness of GD a-Si∶H films,was also studied.It was found that N(E_F~0) decreaaed along with the increase of the thickness of the films.As for GD a-a-Si∶H films,when d<1μm,N(E_F~0)was about the order of 10~(16)/cm~3.eV∶but whend>1μm,N(E_F~0) was about the order of 10~(15)/cm~3.eV.The distribution of the gap state density of GD a-Si∶H film with the structureof coplanar contact was obtained by the temperature-modulated SCLC (TM-SCLC)method.It was found that light light-induced effect existed in the samples radiatedby strong light.The experimental results mentioned above were preliminarily analyzed anddiscussed.

利用常规的层状结构的空间电荷限制电流法,测得了具有一定厚度 d 的 GD-a-Si_(1-x)C_x∶H 和 GD-a-Si_(1-x)N_x∶H 膜不同含量 x 时的隙态分布 N(E):对 GD-a-Si_(1-x)C_x∶H 膜(d(?)1μm),当 x 为0、0.1、0.8时,平衡费米能级附近处的隙态密度 N(E_(?)~o)分别为2×10~(15)、4×10~(15)、6.2×10~(16)/cm~3·eV,对 GD-a-Si_(1-x)N_x∶H 膜(d(?)1μm),当 x 为0、0.05、0.2时,N(E_F~o)分别为2×10~(15)、3×10~(15)、4.5×10~(16)/cm~3·eV;得到了 GD-a-Si∶H 膜的隙态分布与膜厚度的关系,发现随着膜厚度的增加 N(E_F~o)在减小,当 d<1μm 时,N(E_F~o)约为10~(16)/cm~3·eV 的数量级,当 d>1μm 时,N(E_F~o)约为10~(15)/cm~3·eV 的数量级。对共面电极结构的样品,用温度调制空间电荷限制电流法(TM-SCLC),测得了 GD-a-Si∶H 膜的隙态分布,并对光处理前后...

利用常规的层状结构的空间电荷限制电流法,测得了具有一定厚度 d 的 GD-a-Si_(1-x)C_x∶H 和 GD-a-Si_(1-x)N_x∶H 膜不同含量 x 时的隙态分布 N(E):对 GD-a-Si_(1-x)C_x∶H 膜(d(?)1μm),当 x 为0、0.1、0.8时,平衡费米能级附近处的隙态密度 N(E_(?)~o)分别为2×10~(15)、4×10~(15)、6.2×10~(16)/cm~3·eV,对 GD-a-Si_(1-x)N_x∶H 膜(d(?)1μm),当 x 为0、0.05、0.2时,N(E_F~o)分别为2×10~(15)、3×10~(15)、4.5×10~(16)/cm~3·eV;得到了 GD-a-Si∶H 膜的隙态分布与膜厚度的关系,发现随着膜厚度的增加 N(E_F~o)在减小,当 d<1μm 时,N(E_F~o)约为10~(16)/cm~3·eV 的数量级,当 d>1μm 时,N(E_F~o)约为10~(15)/cm~3·eV 的数量级。对共面电极结构的样品,用温度调制空间电荷限制电流法(TM-SCLC),测得了 GD-a-Si∶H 膜的隙态分布,并对光处理前后的样品进行比较,发现强光照后存在有光诱导效应。我们对所得结果作了初步说明。

The distribution of the gap state density of GD-a-Si_(1-x)c_x∶H Films isobtained by Temperature-Modulated-Space-Charge-Limited-Currenttechnique.Changes of gap state density before and after prolonged illumination are found,It is seen that light induced defect state exists in thesamples.In this paper superiority of this method is discussed.

本文用温度调制空间电荷限制电流法测得了 GD-a-Si_(1-x)C_x∶H 膜不同碳含量 x 时的隙态密度,得到了光处理前后隙态密度的变化情况,发现强光照后存在有光诱导缺陷态效应,文中还就该方法本身的优越性进行了讨论.

This paper analyses the characters of SDPS (Silicon Diffused Pressure Micro-Sensors) and presents a simple method of the thermal offset and pressure sensitivity error correction for SDPS based on the resistor network. The related algorithms and formulae are also,provided. Finally, some simulation results are given to evaluate this method.

通过对扩散硅力敏器件(SDPS)建模,分析了其零点温漂和灵敏度温度调制的成因,提出了一种基于电阻网络的补偿方法并系统地叙述了电阻网络的配置及参数计算公式.最后给出了一组仿真结果.

 
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