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层状生长模式
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  “层状生长模式”译为未确定词的双语例句
     The simulation showed that when the temperature was 500℃and the growth rate was 0.64ML/s,the film grew in layer-by-layer mode.
     模拟发现,在T=500℃的情况下,当生长速率v=0.64ML/s时,薄膜以层状生长模式进行;
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     Finally, under the optimal preparation-parameter conditions: Ts=873K, DE=7J/cm2, DST=70mm, FL=5Hz, employing sintered MgO target and inserting a TiN seed layer, atomically smooth MgO films grown with layer-by-layer mode can be successfully obtained.
     最后在优化的制备工艺参数:衬底温度TS=873K,激光能量密度DE=7J/cm2,靶材与衬底间距离DST=70mm,激光脉冲频率FL=5Hz以及采用烧结陶瓷MgO靶材和添加TiN籽晶层的情况下,获得层状生长模式和表面具有原子级平整度的MgO薄膜.
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     3. The growth front evolution of GaN thin films deposited on sapphire substrates by hydride vapor phase epitaxity has been studied with atomic force microscope.
     4.随着时间的增加,GaN 表面变得越来越光滑,这意味着随着生长时间的增加,外延膜的沉积逐渐从二维生长层向层状生长模式转变。
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     After studying submonolayer film growth, we continue to study multilayers film growth on heterogenous substrate. The multilayers film growth process is so complicated that we are forced to simplify the model.
     通过对非均匀基底上多层薄的生长过程的模拟,我们发现控制薄膜采用那种生长模式(层状生长模式,岛状生长模式,混合生长模式)主要是控制层间的ES势的大小,同时还与生长速率与基底温度等多种生长参数有关。
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     The Growth modes of BaTiO\-3(BTO) and c Y\-1Ba\-2Cu\-3O\-\{7-δ\}(YBCO) thin films on the SrTiO\-3 substrates made by L MBE have been studied with RHEED and AFM. The intensity oscillation curves of RHEED have shown that the former grew with atomic layer by layer mode;
     用反射式高能电子衍射(RHEED) 和原子力显微镜(AFM) 研究激光分子束制备的铁电BaTiO3 和高Tc 超导c 取向Y1Ba2Cu3O7 薄膜的生长模式,BTO 铁电薄膜是原子级平整的层状生长模式
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     However at higher deposition temperatures the films without the nanoassembled structure grow in layer-by-layer mode and the self-assembled growth behavior of the films is restrained.
     而在较高的生长温度时,薄膜以层状模式进行生长自组装行为被抑止。
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     Normal Mode
     简正模式
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We have studied the growth of C 60 film on GaAs(001) 2×4 β phase surface epitaxially grown by MBE.Due to the delicate equilibrium between the interaction of C 60 molecules and the interaction of C 60 molecule with the substrate,the toplayer of C 60 film,unlike that on the metal and silicon substrate,shows a non close packed structure.The facet structure of C 60 film exhibits that the top two layers are hcp but the others are fcc,which implies an existence of the phase transition...

We have studied the growth of C 60 film on GaAs(001) 2×4 β phase surface epitaxially grown by MBE.Due to the delicate equilibrium between the interaction of C 60 molecules and the interaction of C 60 molecule with the substrate,the toplayer of C 60 film,unlike that on the metal and silicon substrate,shows a non close packed structure.The facet structure of C 60 film exhibits that the top two layers are hcp but the others are fcc,which implies an existence of the phase transition from hcp to fcc structure in the film growth.The measurement results that the lattice constant of fcc is 1.13 nm,larger of 13% than that of C 60 crystal,and hcp is not ideal which is compressed along c axis.The strain in C 60 film and the minimum of the total energy should be responsible for the existence of the phase transition.On GaAs(001) c(4×4) surface,the structure of C 60 film shows fcc(111) surface and the film grows in three dimensional mode which is quite different from that on other substrates.

利用扫描隧道显微镜(STM)系统地研究了C60薄膜在GaAs(001)表面的异质外延生长.在GaAs(001)2×4β相表面,观察到C60薄膜以非密排面进行生长,并在生长中有结构相变产生.实验数据表明,薄膜下层面心立方(fcc)的晶格常数比C60晶体的晶格常数要大13%;而薄膜的表层结构则展示了非理想的六角密堆(hcp)结构,其表面为hcp(1100)面,生长过程是非理想的层状生长模式.在GaAs(001)c(4×4)衬底上,C60薄膜的表面仍然是fcc(111)面,其结构参数与C60晶体一致,但C60薄膜采用了三维模式进行生长

The Growth modes of BaTiO\-3(BTO) and c Y\-1Ba\-2Cu\-3O\-\{7-δ\}(YBCO) thin films on the SrTiO\-3 substrates made by L MBE have been studied with RHEED and AFM. The intensity oscillation curves of RHEED have shown that the former grew with atomic layer by layer mode; but the latter grew with the Stranski Krastanov mode. Appropriate treatments of STO can change the morphology, structure and composition of STO surface, consequently change the growth mode of c YBCO to the step flow mode.

用反射式高能电子衍射(RHEED) 和原子力显微镜(AFM) 研究激光分子束制备的铁电BaTiO3 和高Tc 超导c 取向Y1Ba2Cu3O7 薄膜的生长模式,BTO 铁电薄膜是原子级平整的层状生长模式;c 取向YBCO 超导薄膜是SK生长模式 当薄膜厚度小于5 个原胞时,层状生长,然后是台阶岛状生长.处理SrTiO3 基片表面可以改变c 取向YBCO薄膜的生长模式

The BaTiO\-3 thin film was grown epitaxially on SrTiO\-3(001) substrate by laser molecular beam epitaxy (laser\|MBE). The film growth process was monitored by \%in situ\% reflection high\|energy electron diffraction (RHEED), the regular RHEED intensity oscillation from the 0th\|Bragg reflection shows an unit cell layer\|by\|layer growth mode. The crystalline structure and the surface morphology of the laser\|MBE BaTiO\-3 film were characterized by X\|ray diffraction (XRD) and by atomic force microscopy (AFM),...

The BaTiO\-3 thin film was grown epitaxially on SrTiO\-3(001) substrate by laser molecular beam epitaxy (laser\|MBE). The film growth process was monitored by \%in situ\% reflection high\|energy electron diffraction (RHEED), the regular RHEED intensity oscillation from the 0th\|Bragg reflection shows an unit cell layer\|by\|layer growth mode. The crystalline structure and the surface morphology of the laser\|MBE BaTiO\-3 film were characterized by X\|ray diffraction (XRD) and by atomic force microscopy (AFM), respectively. The XRD and AFM results show that laser\|MBE BaTiO\-3 film exhibit the tetragonal \%c\%\|axis oriented structure and an atomically smooth surface with a root mean square surface roughness of 0 16?nm. The topmost surface of the film was studied by angle\|resolved X\|ray photoelectron spectroscopy (ARXPS), indicating the laser\|MBE BaTiO\-3 film is predominantly terminated with TiO\-2 atomic plane. The topmost surface of laser\|ablated BaTiO\-3 film was also analyzed. The film growth mechanism was investigated in atomic scale.

用激光分子束外延技术在SrTiO3 (0 0 1)衬底上外延生长了高质量的BaTiO3 薄膜 ,薄膜的生长过程由反射式高能电子衍射仪 (RHEED)原位实时监测 ,表明薄膜具有二维层状生长模式 .薄膜的晶体结构和表面形貌分别由X射线衍射和原子力显微镜表征 ,显示该薄膜为完全c轴取向四方相晶体结构 ,其表面具有原子尺度光滑性 .采用角分辨X射线光电子谱技术 (ARXPS) ,研究了BaTiO3 薄膜表面最顶层原子种类和排列状况 .结果表明 ,BaTiO3 薄膜表面最顶层终止在TiO2 原子平面 .在此基础上 ,进一步在原子水平上探讨了BaTiO3 薄膜的层状外延生长机理 .

 
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