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高速激光器
相关语句
  high speed lasers
     In this paper, the present status of the high speed lasers, photonic integrated circuits (PICs) for optical transmitters and optoelectronic integrated circuits (OEICs) for photoreceivers are reviewen, and the integration technology and future trends are briefly discussed.
     本文介绍了高速激光器的现状,并综述了高速激光器的光集成和接收机的光电集成。 最后,讨论了光集成和光电集成技术及其今后的发展
短句来源
  “高速激光器”译为未确定词的双语例句
     Design of Material Structure and Epitexyial Growth of 1.55μm High Speed LD
     1.55μm高速激光器材料结构设计及外延生长
短句来源
     The Design of 1550nm Ridge Waveguide High Speed Laser Chip
     1550nm脊波导高速激光器芯片设计
短句来源
     This assignment selects GaInAsP/InP material system to grow 1550nm high-speed laser. We study the modulation characteristic and the waveguide structure of the laser.
     本课题采用了GaInAsP/InP材料体系生长1550nm的高速激光器,对激光器的波导结构和器件的调制特性进行了研究。
短句来源
     The main assignment is the design of the 1550nm RW laser chip.
     发射波长为1550nm的脊波导高速激光器芯片设计是本课题的主要任务。
短句来源
     The Research on the Kink of P-I Curve on LD Packages
     高速激光器组件P-I曲线扭折问题研究
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  相似匹配句对
     Matching technology for high speed laser diode
     高速半导体激光器的匹配技术
短句来源
     Design of high speed semiconductor laser
     高速半导体激光器的设计
短句来源
     High speed optical modulators
     高速光调制器
短句来源
     Laser Q-Switching
     激光器Q调
短句来源
     High-speed Filtration Equipment
     高速过滤装置
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In this paper, the present status of the high speed lasers, photonic integrated circuits (PICs) for optical transmitters and optoelectronic integrated circuits (OEICs) for photoreceivers are reviewen, and the integration technology and future trends are briefly discussed.

本文介绍了高速激光器的现状,并综述了高速激光器的光集成和接收机的光电集成。最后,讨论了光集成和光电集成技术及其今后的发展

Three kindsof P-I curve kink from the high-speed LD , w hich c an be able to be displayed in LD test, have been reported and analyzed in this paper. They pointed out that the small P-I curve kinksat the condition of t he driving-currents20~40 mA and the optical power 0.3~5mW are because of the reflects from the boundary of some optical elementsor the surface of the optical fiber end, some method to avoid or minimum P-I curve kind have been discussed.

报告和分析了高速激光器组件中可能出现的3种P-I曲线扭折;指出了在驱动电流20~40mA、光功率0.3~5mW范围内的较小的P-I曲线扭折,为光学元件表面(或界面)和光纤端面光反射所致;讨论了避免或减小P-I曲线扭折的几种方法。

The high-speed modulated semiconductor lasers are the key devices in the system of high-speed fiber communication and phase control radar systems,etc.The parasitic capacitance of the high speed laser is one of those factors which affect the modulation bandwidth.In order to reduce it,the capacitance of the ridge waveguide structure was analyzed and tested,computer simulation was performed.A conclusion is made that capacitance's value is related to not only the eroded depth of the insulation channel but also the...

The high-speed modulated semiconductor lasers are the key devices in the system of high-speed fiber communication and phase control radar systems,etc.The parasitic capacitance of the high speed laser is one of those factors which affect the modulation bandwidth.In order to reduce it,the capacitance of the ridge waveguide structure was analyzed and tested,computer simulation was performed.A conclusion is made that capacitance's value is related to not only the eroded depth of the insulation channel but also the area of the metallization,which is important for the realization of the high-speed modulation of the laser.

高速调制半导体激光器光源是光纤通信系统、相控阵雷达等的关键器件。高速激光器的寄生电容是影响其调制带宽的因素之一。为了减小寄生电容,针对脊波导结构激光器的电容,采用计算机模拟与实际测试相结合的方法,进行了理论分析和实验验证。结果表明,其寄生电容大小不仅与电极金属化面积有关,还与隔离沟的腐蚀深度有关。当腐蚀至波导层时,寄生电容减小到10pF以下。这一结论对实现激光器的高速调制是非常有意义的。

 
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