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小功率晶体管
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     Based on the theoretical model, a new type of the transistor with low temperature coefficient of the current gain has been manufactured successfully.
     据此理论模型研制成功了电流增益温度特性优良的中小功率晶体管系列。
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     The mechanism of the a-SiC:H/a-Si:H complex passivative film is described in brief. This film has been successful used in low-power silicon planer devices.
     本文简述了用α-SiC:H/α-Si:H复合膜钝化硅平面器件的钝化机理,并成功地应用于硅平面小功率晶体管的表面钝化,实验表明,钝化后的器件反向漏电流降低了2~3个数量级;
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     These measuers are discussed in this paper, also some ways for decreasing switching power consumption and storage time of power transistors are introduced.
     电流所采取的措施,同时也讨论了减小功率晶体管开关损耗和缩短晶体管贮存时间的方法。
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     This paper introduces a kind of large current and narrow width pulsed driving circuit which is based on the avalanche effect of high freguency and small power transistors.
     介绍利用高频小功率晶体管的雪崩效应设计激光器的大电流窄脉冲驱动电路 ,对该电路建立了数学模型 ,并对电路参数进行了仿真。
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     A low energy argon ion beam has been applied to bombard the backsurface of silicon wafers after the ultrahigh frequency low power transistors are fabricated, and the noise coefficient of low frequency and high frequency can be decreased effectively, the characteristics frequency and current gain of direction current can be increased.
     在完成超高频小功率晶体管的芯片和上部铝电极的制备工艺后 ,采用低能量氩离子束轰击芯片背面 ,能有效地降低其高频及低频噪声系数、提高其特征频率和电流放大系数 .
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  相似匹配句对
     Transistor
     晶体管
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     Avalanche Injection Transit Time Transistor
     崩越晶体管
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     A Study of UPS Series Power Supply for a New Type of Low-Powered Transistor
     一种新型晶体管小功率UPS系列电源的研究
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     In fact the multimeter can measureβof low power transistor.
     而应用万用表能迅速、准确地测量小功率晶体管的β值。
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     The Cross Swing Motion of the Small-power Diesel Engine
     小功率柴油机的横向摆动
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The factors influencing the current gain hFE temperature dependence in silicon bipolar transistors is investigated. Taking into account the effect of non-ideal factor n in the medium current range a concept of the "apparent amount of bandgap narrowing" is introduced and a theoretical model of the current gain hFE temperature dependence is presented. Experimental investigation on the heavy doping effect in silicon bipolar transistor is carried out.Based on the theoretical model, a new type of the transistor with...

The factors influencing the current gain hFE temperature dependence in silicon bipolar transistors is investigated. Taking into account the effect of non-ideal factor n in the medium current range a concept of the "apparent amount of bandgap narrowing" is introduced and a theoretical model of the current gain hFE temperature dependence is presented. Experimental investigation on the heavy doping effect in silicon bipolar transistor is carried out.Based on the theoretical model, a new type of the transistor with low temperature coefficient of the current gain has been manufactured successfully.

本文研究了影响双极型硅晶体管电流增益h_(FE)温度特性的各种因素。计及基极电流非理想因子n的影响,引入了“禁带宽度视在变窄量”△E_(8a)的概念,提出了描述h_(FE)温度特性的理论模型。实验表明,降低发射区掺杂浓度和改变发射区的图形结构,对改善h_(FE)的温度特性十分有利。据此理论模型研制成功了电流增益温度特性优良的中小功率晶体管系列。

The mechanism of the a-SiC:H/a-Si:H complex passivative film is described in brief. This film has been successful used in low-power silicon planer devices. After passivation, we get, two-to-three-orders-of-magnitude reduction in reverse leakage current, increase in low-level injection current gain evidently. Befor passivation, the current gain at 200℃ increase by 300% over room temperature(27℃), but after passivation, it only increase by 75%.

本文简述了用α-SiC:H/α-Si:H复合膜钝化硅平面器件的钝化机理,并成功地应用于硅平面小功率晶体管的表面钝化,实验表明,钝化后的器件反向漏电流降低了2~3个数量级;小注入下的电流放大系数提高了3~4倍;室温—200℃的BT实验表明,未钝化的器件200℃时的电流放大系数比室温时增加了300%,而钝化后的器件只增加了75%。这些结果主要归因于钝化膜中原子态氢在到达SiO_2-Si界面处与界面处悬挂键结合,降低了界面态密度。

when low energy argon ion beam bombards the backsurface of silicon wafers, after the high frequency low power transistor and ultrahigh frequency low power transistor are fabricated, it can increase effectively the D-C current gain hFE, the A-C current gain h21 and the character frequency fT, and improve the collector-base junction breakdown characteristics. Our experimental results show that the improvement of parameter as above is owing to the increasing of minority carrier lifetime and the decreasing of interface...

when low energy argon ion beam bombards the backsurface of silicon wafers, after the high frequency low power transistor and ultrahigh frequency low power transistor are fabricated, it can increase effectively the D-C current gain hFE, the A-C current gain h21 and the character frequency fT, and improve the collector-base junction breakdown characteristics. Our experimental results show that the improvement of parameter as above is owing to the increasing of minority carrier lifetime and the decreasing of interface state density, and the improvement is relevant to the bombardment time and the beam current density for the same energy of bombardment.

在制造硅npn型高频、超高频小功率晶体管管芯和形成铝电极后,用低能量氩离子束进行背面轰击,能显著增大晶体管的直、交流电流放大系数,提高特征频率和使击穿特性变硬。实验结果表明,上述参数的改善,是轰击后界面态密度减小和基区少数载流子寿命增长的结果,而且与轰击时间及束流密度有关。

 
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