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靶利用率
相关语句
  “靶利用率”译为未确定词的双语例句
     Influence of External Magnetic Field on Utilization Ratio ofTarget Materials in Magnetron Sputtering
     外加磁场对磁控溅射靶利用率的影响
短句来源
     おor the economic production of Flat-Panel-Displays a high target utilization beside the reliable process technology is absolutely mandatory This paper describes that a target utilization of >50% could be achieved with a moving magnet arrangement maintaining the film properties which were achieved with the standard cathode for the ITO process
     平板显示屏的经济生产,不仅要求可靠的工艺技术,而且绝对要求较高的靶利用率。 本文介绍了在保持ITO工艺的标准阴极法所获得的膜特性基础上,用移动磁场的方法可以获得>50%的靶利用率
短句来源
  相似匹配句对
     Target utilization ratio is improved to about 64%.
     而利用率可达64%左右。
短句来源
     ②utilization rate;
     ②利用率
短句来源
     Development of Cylindrical Rotating Magnetrons with High Target Utilization Rate
     高利用率的新型磁控溅射器
短句来源
     A New Type of Photoconductive Target
     新型光导
短句来源
     Phytute and mineral availability“The evalation of minerals in the diets of farm animals”
     植酸盐和矿物质利用率
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In this paper,a new magnetron sputtering apparatus with two annular magnets facing each other is introduced. The limited deposition rate and the lifetime of the target,which are the general troubles with conventional planar magnetrons,have been greatly improved. The deposition rate of Cu films is about 800nm/min at the sputtering power density of 11W/cm~2,and can reach a higher value with larger input power.Target utilization ratio is improved to about 64%. Furthermore,the angular distribution of the particles...

In this paper,a new magnetron sputtering apparatus with two annular magnets facing each other is introduced. The limited deposition rate and the lifetime of the target,which are the general troubles with conventional planar magnetrons,have been greatly improved. The deposition rate of Cu films is about 800nm/min at the sputtering power density of 11W/cm~2,and can reach a higher value with larger input power.Target utilization ratio is improved to about 64%. Furthermore,the angular distribution of the particles sputtered has been studied. According to the hypothesis of cos~nθ distribution,we found a good coincidence between the calculations and the experimental results when we set "n" equal to 3. 3.

介绍一种新型磁控溅射装置。它采用两块极性相对的环状磁铁的设计方法,通过扩大靶表面的等离子放电区域面积,使传统磁控溅射枪使用中经常受到的两个限制──溅射速率与靶的利用率得到了较大的改善。实验中铜靶在溅射功率密度为11W/cm~2时溅射速率约为800nm/min,如果继续提高功率则可获得更高的速率。而靶的利用率可达64%左右。另外,在认为出射粒子符合cos~nθ分布的前提下,发现当n=3.3时,实验数据和理论数据符合得较好。

おesults of low resistivity ITO films deposited by RF superimposed DC magnetron sputtering in combination with the Move Mag cathode for high target utilization are discussed in this paper The experiments were carried out on an ARISTO 500 S in line sputtering system with a usable substrate area of up to 570×1350mm2 Specific resistivities of less than 150μΩ·cm on glass (Floatglass) at 200℃ substrate temperature and a target utilization of more than 40% are achieved

对MoveMag阴极(旨在提高靶利用率)叠加RF的DC磁控溅射方法所淀积的低电阻率ITO膜的结果进行了讨论。实验是在一个串级溅射系统ARISTO500S上进行的,可用基片面积高达570×1350mm2,在基片温度200℃及靶利用率高于40%的条件下,在玻璃(浮法玻璃)上得到电阻率小于150μΩcm的ITO薄膜。

おor the economic production of Flat-Panel-Displays a high target utilization beside the reliable process technology is absolutely mandatory This paper describes that a target utilization of >50% could be achieved with a moving magnet arrangement maintaining the film properties which were achieved with the standard cathode for the ITO process

平板显示屏的经济生产,不仅要求可靠的工艺技术,而且绝对要求较高的靶利用率。本文介绍了在保持ITO工艺的标准阴极法所获得的膜特性基础上,用移动磁场的方法可以获得>50%的靶利用率

 
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