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可控硅电路
相关语句
  circuit of silicon controlled
     Description of Voltage Wave in Circuit of Silicon Controlled
     可控硅电路中电压波形的画法
短句来源
  thyristor circuit
     ANALYSIS FOR THE PROBLEM OF COMMUTATION IN THYRISTOR CIRCUIT
     可控硅电路中的截流问题分析
短句来源
     The saturable-reactor controlled by a three-phase thyristor circuit may be considered as an element in a closed loop reactive power control system which consists of two controllers, the current controller and the reactive power controller.
     饱和电抗器作为无功闭环控制系统的调节元件,由三相可控硅电路控制,该系统有两个控制器,即:电流控制器与无功功率控制器。
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  “可控硅电路”译为未确定词的双语例句
     This paper introduces a SCR power supply for 1500W FAF CO 2 laser.
     本文介绍了可控硅电路应用于1500W 快轴流CO2 激光器直流电源系统。
短句来源
     TWO-WAY SILICON CONTROLLED ELECTRIC CIRCUIT IN THE MICROCOMPUTER INSPECTION SYSTEM WHICH ARISE STEPLESS CHANGE OF ILLUMINATION DENSITY
     微机监控系统中光照强度无级变化的双向可控硅电路
短句来源
     The description of voltage wave in circuit of controlled silicon
     可控硅电路中电压波形的画法
短句来源
     The IGBT-controlled chopper circuit can be greatly simplified as the smoothing inductor and commutation circuit of the thyristor-controlled chopper circuit are no more required.
     采用IGBT的斩波电路可以省去原来可控硅电路所需的平波电抗器和强迫关断电路,因此斩波电路结构可以得到极大的简化。
短句来源
  相似匹配句对
     THE MAGNETIC TRIGGER CIRCUIT OF SCR
     可控硅的磁性触发电路
短句来源
     Protective Circuitry For SCR Servosystem
     可控硅伺服系统保护电路
短句来源
     Basic Direct Current Circuits
     直流电路
短句来源
     Communication Circuits
     通信电路
短句来源
     The Trigger of Bidirectional Triode Thyristor
     双向可控硅的触发
短句来源
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  thyristor circuit
The joystick has two distinct actions: smooth control of forward and reverse speed via a thyristor circuit, and steering via a servo circuit.
      
When a dc source is used with a thyristor circuit, energy source facilitated commutation is clearly not possible.
      


The static compensator of reactive power is a new development of reactive power compensation technique in 1970's, In this paper, the static compensator consisting of a controlled saturable-reactor and static condensers is analyzed. This compensator is connected in parallel with the power network. The saturable-reactor controlled by a three-phase thyristor circuit may be considered as an element in a closed loop reactive power control system which consists of two controllers, the current controller and the reactive...

The static compensator of reactive power is a new development of reactive power compensation technique in 1970's, In this paper, the static compensator consisting of a controlled saturable-reactor and static condensers is analyzed. This compensator is connected in parallel with the power network. The saturable-reactor controlled by a three-phase thyristor circuit may be considered as an element in a closed loop reactive power control system which consists of two controllers, the current controller and the reactive power controller. The system is applicable to compensate the large fluctuation of shock reactive power in network at very short time. The dynamic process of the compensating SR has been analyzed and the optimal dimensional ratio of SR under the condition of minimum time constant has also been given.

静止无功补偿装置是七十年代无功功率补偿技术的新发展。本文讨论的静止补偿装置是由三相可控饱和电抗器及静止电容器组成,与电网并联。 饱和电抗器作为无功闭环控制系统的调节元件,由三相可控硅电路控制,该系统有两个控制器,即:电流控制器与无功功率控制器。该系统可以快速补偿电网冲击性无功负载的大幅度波动。 本文分析了补偿用单相饱和电抗器的动态过程,并给出最小时间常数条件下饱和电抗器的最佳几何尺寸比例。

The non-contact circuits must be used in some control parts, when the automated production line was controled by industrial control unit in the environment of high density of acid or alkai. A thyristor circuit and the analysis of mechanical characters, principle and connection of brake parts of its power lines are presented in this paper. The trigger circuit of thyristor was improved. In application the result is very good.

在酸碱浓度大的工作环境中,当使用“工业控制单元”控制的自动线时,某些控制环节必须使用无触点线路。本文提出了可控硅电路,并对它的动力回路的制动部份机械特性、原理、接线作了分析,对可控硅的触发脉冲电路作了一些改进。这一成果在实际应用中取得了较好效果。

This paper describes the principle of silicon dioxide deposition at low premature(420℃-450℃)on n-type GaAs epituial material in a plane type Gunn domain avalanche device. The sandwich structure of silicon dioxide as Well as deposition technology are given.We have also shown the circuit diagram of controllable silicon and some relaied important results.

采用“夹层结构”的方法制作平面型Gunn畴雪崩器件的n型GaAs外延材料,以及低温(420℃~450℃)淀积SiO2的原理、工艺条件和可控硅电路

 
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