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双极电路
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  bipolar circuit
     BiCMOS (Bipolar Complementary Metal-Oxide-Semiconductor) technology combines bipolar device with CMOS device effectively, so it not only holds CMOS circuit's virtues of low power, high integration density, but also obtain bipolar circuit's merits of high speed strong driving power. So people are increasingly attaching much importance to the technology in recent years.
     BiCMOS(Bipolar Complementary Metal-Oxide-Semiconductor)技术将双极型器件与CMOS器件有效结合,既保持了CMOS电路的低功耗和高集成度的优点,又获得了与双极电路相媲美的高速性能和强驱动能力,因此,近年来此技术正日益受到集成电路(IC)业界的重视。
短句来源
     BiCMOS (Bipolar Complementary Metal-Oxide-Semiconductor) technology combines bipolar device with CMOS device effectively, so it not only holds CMOS circuit's virtues of low power, high integration density, but also obtain bipolar circuit's merits of high speed strong driving power.
     BiCMOS(Bipolar Complementary Metal Oxide Semiconductor)是一种结合CMOS与双极型器件结构在单一集成电路内的技术。 它既保持了CMOS电路在功耗、噪声容限和封装密度上的优势,又获得了与双极电路相媲美的高开关速度、强电流驱动能力和较佳的模拟电路性能。
短句来源
     The test data is analyzed and the influence of ionization radiation for bipolar circuit, MOS circuit is indicated.
     对试验后的数据进行了分析,指出电离辐射对双极电路、MOS电路、CMOS电路的影响结果。
短句来源
  bipolar circuits
     Developments in analog IC's are reviewed in the paper,including analog-to-digital and digital-to-analog converters,very high-speed SOI devices and circuits,high-speed bipolar circuits,GeSi/Si heterojunction devices and circuits,and smart power IC's.
     本文介绍了A/D与D/A转换器、超高速SOI器件及电路、超高速双极电路、GeSi/Si异质结器件和电路、智能功率等模拟集成电路的发展概况。
短句来源
  “双极电路”译为未确定词的双语例句
     This exhibits the excellent performances than Si bipolar based A-D in speed and power loss.
     这说明它在速度和功耗方面已展现出比Si双极电路更为广阔的发展前景。
短句来源
  相似匹配句对
     Analysis and Development for Bipolar PROM
     双极PROM的电路分析与研制
短句来源
     Recognition and Circuit extracted of Bipolar IC Mask Pattern
     双极集成电路版图识别与电路提取
短句来源
     Basic Direct Current Circuits
     直流电路
短句来源
     Circuit Classical
     电路经典
短句来源
     Advance in Bipolar Transistors
     双极晶体管的进步
短句来源
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  bipolar circuit
Design physics and processing; basic CMOS and bipolar circuit structures.
      
Table 7 illustrates the lack of dependence of bipolar circuit SER cross sections on operating temperature.
      
The Si bipolar circuit makes use of a common base configuration with an inductive feedback element connecting the transistor's base to ground.
      
The comparator used an input differential pair with latch like bipolar circuit.
      
The power consumption is unacceptable and it will be replaced by bipolar circuit.
      
  bipolar ic
Based on the comparison and analysis of the circuit characteristics, it is shown that the method can be used for analysis and design of bipolar IC's.
      
CD117-immunoreactivity labeled bipolar IC and round-shaped mast cells (MC) throughout the adventitia, tunica muscularis and submucosa within the whole porcine urinary tract.
      
While MC were found continuously in all investigated segments, a gradient of bipolar IC was evident.
      
In addition, the relevant parameters of the DIMES-01 bipolar IC process are given.
      
Looking at the various isolators and couplers in the market they all consist of integrated CMOS or bipolar IC.
      
更多          
  bipolar circuits
A new VSi2/Ti: W/Pd/Rh/Au metallization scheme for use in bipolar circuits is described.
      
Bipolar circuits require a resistor in the collector path, adding to power consumption.
      
Thk zero is present in bipolar circuits as well, but is typically at a high frequency due to the higher transconductance of bipolar fievices.
      
The effect on bipolar circuits significant, less on MOS, but should increase with decreasing circuit size and higher density technologies.
      
The results for the small bipolar circuits are within the accuracy of the SER experiments, and show excellent reproducibility.
      
更多          


Annealing characteristics of boron ion implanted regions in bipolar IC's with arsenic-implanted polysilicon emitters have been studied. Experimental results showed that the characteristics of p-n junctions annealed in O2 atmosphere were better than those annealed in N2 atmosphere.

本文研究了注砷多晶硅发射区双极电路的硼离子注入区的退火特性。实验表明,在退火温度及时间相同的条件下,O_2气氛退火的注硼p-n结特性优于N_2气氛退火的p-n结特性

The analog-digital (A-D) converter is a critical component of signal processing systems. This paper describes the design of 2-bit A-D converter using GaAs VHSIC technology being commonly used. Monolithic integrated 2-bit A-D circuits were fabricated and successfully operated at gigahertz sampling rates. Its conversion time is less than 1.0ns and the power loss is not more than 340 mW. This exhibits the excellent performances than Si bipolar based A-D in speed and power loss.

模数(A-D)转换电路是信号处理系统中的一种关键性元件。本文结合现有GaAs起高速集成电路工艺,提出了一种2位GaAs A-D转换电路的设计方法,并制作出了单片形式的2位GaAs A/D转换电路。实验结果表明,该电路能正常工作在1Gs/s的转换速率下。它的转换时间小于1.0ns,电路功耗不高于340mW。这说明它在速度和功耗方面已展现出比Si双极电路更为广阔的发展前景。

Developments in analog IC's are reviewed in the paper,including analog-to-digital and digital-to-analog converters,very high-speed SOI devices and circuits,high-speed bipolar circuits,GeSi/Si heterojunction devices and circuits,and smart power IC's.

本文介绍了A/D与D/A转换器、超高速SOI器件及电路、超高速双极电路、GeSi/Si异质结器件和电路、智能功率等模拟集成电路的发展概况。

 
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