Crystalline silicon samples were first implanted at room temperature with 160 keV He ions at a dose of 5×10 16ions/cm 2.Some of these samples were then co-implanted with 80 keV Si ions to a dose of 5×10 15ions/cm 2,or were co-treated with high density hydrogen plasma.
Crystalline silicon samples were implanted at room temperature with 1.55MeV 3He ions at different doses ranging from 5 × 1015 to 5 × 1016 /cm2. Damage production after subsequent high temperature annealing was studied by using cross-sectional transmission electron microscopy (XTEM).
Super hard (Ti,Al,V)N thin film is prepared on high speed steel,glass plate,single crystal silicon membrane substrate with Ti 6Al 4V target and N 2 gas by multi arc ion plating.
Single crystal silicon samples were implanted at room temperature with He ions of different energies (40, 160 and 1550keV) to the same fluence of 5×10~(16) ions/cm~2. Cross-sectional transmission electron microscopy was used to study on the formation of cavities after the subsequent annealing at 800℃ for 1h.
By mass analyzing low energy dual ion beam epitaxy technique,semiconductive manganese silicide,Mn 27 Si 47 and Mn 15 Si 26 ,is obtained. Auger electron spectroscopy depth composition measurement shows that some Mn ions deposited on the single crystal silicon can form a 37 5nm thick Mn film,and the other Mn ions can be successfully implanted into Si substrate with the depth of implantation of 618nm.
The influence of micro powder grain size of diamond used to substrate abrasive surface pretreatment on the diamond nucleation density is large on single crystal silicon substrate,but it is not too large on W and WC 6%Co cemented carbide.
用于衬底研磨预处理的金刚石微粉粒度对金刚石在单晶 Si 片上的成核密度有较大影响，而对在 W C6 ％ Co 硬质合金和金属 W 上的成核密度没有太大影响。
In the experiment, a layer of SiO2 film is formed on monocrystalline silicon by thermal growth, and an Al film is deposited on the SiO2 film using vacuumreaction evaporation Then, a porous Al2O3 film is formed with anodic oxidation A capacitive humidity sensor is designed and fabricated on the Al2O3 film The capacitance against humidity characteristics is obviously observed, and the humidity measurement range of the sensor is broad
Results showed that the refractive index n of Si films was lower, the extinction coefficient κ higher and the optical absorption larger than those of blocky monocrystalline silicon.
The semiconductor solid phase epitaxial model of continuous laser annealing is used to simulate the laser annealing process of monocrystalline silicon at the continuous Nd∶YAG laser. Specially,at lower power density of laser,quasi static model is used to simulate the radial heat dissipation from irradiated region to nonirradiated regions.
Lead zirconate titanate (PZT) thin films are prepared on the substrates of monocrystal Si,PLT/Si,PT/Si/and proton-exchanged(PE)LiNbO3 by sol-gel process. Interface diffusion and the effect of Pb content on the films crystallization were investigated.
The Co/Pt multilayers film was deposited on monocrystal Si(111) using electrocrystallization in boric acid system, in which Pt(NO2)2(NH3)2 and CoSO4 were used as main salts. The cross section morphology of the multilayers was characterized by SEM method.
The Debye temperature of crystalline silicon and the root-mean-square dynamic displacement of atoms from the equilibrium position in its crystal lattice are calculated using the available data on thermal expansion.
The use of an updated accelerator of the НГ-12И neutron generator as a high-current implanter of hydrogen ions (protons and deuterons) with energies of 175-210 MeV into wafers made of crystalline silicon is described.
Samples of macroporous ceramics based on crystalline silicon dioxide-(the pore diameter >amp;gt; 50 μm) with superficial membrane layers (the pore diameter 10-20 μm) are obtained.
Raman scattering and photoluminescence data are used to show that the radiation hardness of porous silicon layers is substantially greater than that of single crystal silicon.
Thermal conditions in a metallization layer deposited onto a single crystal silicon substrate were studied during the passage of single electric pulses with a current density of j=(1-8)×1010 A/m2 and a duration of τ=50-800 μs.
The temperature dependence of the internal friction in dislocation-free single crystal silicon after preliminary ultrasonic treatment exhibits a dominating peak at T≈510 K.
Electrochemical formation of deep layers of porous silicon (PS) in monocrystalline silicon of type KEF-20 in electrolytes containing formic and acetic acids is studied.
It has been suggested and realized a kinetic approach to the investigation of sorbostriction isotherms on plates of aluminum, glass, and monocrystalline silicon at the sorption of water from its vapor.
单晶si
crystalline silicon
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