助手标题  
全文文献 工具书 数字 学术定义 翻译助手 学术趋势 更多
查询帮助
意见反馈
   本征吸收峰 的翻译结果: 查询用时:0.008秒
图标索引 在分类学科中查询
所有学科
仪器仪表工业
更多类别查询

图标索引 历史查询
 

本征吸收峰
相关语句
  “本征吸收峰”译为未确定词的双语例句
     All absorption peaks arising from hydrogen and hydrogen related defects of n-FZ Si(H2) before and after neutron irradiation have been both discussed and assigned.
     对于在n-FZSi(H_2)所引起的本征吸收峰和辐照损伤吸收峰,进行了讨论和指派。
短句来源
     , respectively. The ionization cnergy of acccptors is 0.22eV and 0.27eV evaluated from the relationship between conductivity and veciprocal temperature. The peak values of intrinsic optical absorption are 1.46eV at R.
     由光电导光谱得到的室温本征吸收峰为1.46 eV,低温本征吸收峰为1.51eV.
短句来源
  相似匹配句对
     A New Technology of Intrinsic Gettering Process
     本征吸收新工艺
短句来源
     Single bonded CN and triple bonded CN were identifies by infrared absorption spectra.
     红外吸收光谱呈现C—N和C≡N的吸收
短句来源
     A study of wavelength shift on absorption peak
     关于吸收波长移动的探讨
短句来源
     All absorption peaks arising from hydrogen and hydrogen related defects of n-FZ Si(H2) before and after neutron irradiation have been both discussed and assigned.
     对于在n-FZSi(H_2)所引起的本征吸收和辐照损伤吸收,进行了讨论和指派。
短句来源
     In addition,there also exist C=C vibra tion peak as the result of the de-hydrogen chloride reaction.
     C振动
短句来源
查询“本征吸收峰”译词为用户自定义的双语例句

    我想查看译文中含有:的双语例句
例句
没有找到相关例句


Hydrogen related defect states generated in n-FZ Si(H2) single crystal after neutron irradiation have been studied by IR absorption. We observed some new absorption peaks that have not yet been reported. These peaks appear at 1992cm-1 and 1857 cm-1 in non-irradiated and irradiated specimens respectively. All absorption peaks arising from hydrogen and hydrogen related defects of n-FZ Si(H2) before and after neutron irradiation have been both discussed and assigned. And the 2150cm-1 absorption peak is attributed...

Hydrogen related defect states generated in n-FZ Si(H2) single crystal after neutron irradiation have been studied by IR absorption. We observed some new absorption peaks that have not yet been reported. These peaks appear at 1992cm-1 and 1857 cm-1 in non-irradiated and irradiated specimens respectively. All absorption peaks arising from hydrogen and hydrogen related defects of n-FZ Si(H2) before and after neutron irradiation have been both discussed and assigned. And the 2150cm-1 absorption peak is attributed to the hydrogen donor.

对于中子辐照的n-FZSi(H_2),利用红外吸收光谱研究了由于辐照所产生的各种与氢有关的缺陷态。在未辐照的样品和辐照的样品中分别发现了未曾报道的1992cm~(-1)和1857cm~(-1)吸收峰。对于在n-FZSi(H_2)所引起的本征吸收峰和辐照损伤吸收峰,进行了讨论和指派。2150cm~(-1)吸收峰则被认为是由于氢施主所引起的。

The single crystal CdTe was grown by using Stockbarger-Bridgman technique and the structural and electrical properties of the crystal were studied by using optical and measuring Hall coefficient techniques. The main defects of the crystal are twin bands, sub-grain boundary, precipitates and dislocations. The electrical measurments showed that all crystal grown from melt is P-type semiconductor and that the resistivity is about 10~2~10~3Ωcm, the Hall mobility of holes is about 80 cm~2/v·s., the unconpensated...

The single crystal CdTe was grown by using Stockbarger-Bridgman technique and the structural and electrical properties of the crystal were studied by using optical and measuring Hall coefficient techniques. The main defects of the crystal are twin bands, sub-grain boundary, precipitates and dislocations. The electrical measurments showed that all crystal grown from melt is P-type semiconductor and that the resistivity is about 10~2~10~3Ωcm, the Hall mobility of holes is about 80 cm~2/v·s., the unconpensated concentration of carrier is about 10~(13)~10~(14)cm~(-3) at R. T., respectively. The ionization cnergy of acccptors is 0.22eV and 0.27eV evaluated from the relationship between conductivity and veciprocal temperature.The peak values of intrinsic optical absorption are 1.46eV at R. T. and 1.51eV at L. N. T. measured by photoconductive spectra.

本文叙述了从熔体生长CdTe单晶的方法,并对生长的单晶中存在的主要结构缺陷进行了显微观察。用霍尔系数及电导率测量的方法研究了单晶的电学性质。由光电导光谱得到的室温本征吸收峰为1.46 eV,低温本征吸收峰为1.51eV.

Transverse photocurrent spectra and absorption spectra of MBE GaAs/AlGaAs MQWshave been studied.The photocurrent spectra show various exciton peaks and an extrinsic absorptionfrom acceptor levels in the wells to the n=1 electron subband.From both allowed andforbidden transitions,two electron and five hole subbands are determined. Our data are inexcellent agreement with a square well calculation using Q_c=0.60, m_e=0.0665, m_h=0.45 andm-l=0.12. A comparison of absorption spectra with photoluminescence spectra...

Transverse photocurrent spectra and absorption spectra of MBE GaAs/AlGaAs MQWshave been studied.The photocurrent spectra show various exciton peaks and an extrinsic absorptionfrom acceptor levels in the wells to the n=1 electron subband.From both allowed andforbidden transitions,two electron and five hole subbands are determined. Our data are inexcellent agreement with a square well calculation using Q_c=0.60, m_e=0.0665, m_h=0.45 andm-l=0.12. A comparison of absorption spectra with photoluminescence spectra has been made.

研究了MBE GaAs/AlGaAs多量子阱结构的横向光电流谱和光吸收谱。在光电流谱中观测到多种允许和禁戒的激子吸收峰以及一个阱中受主态至n=1电子态的非本征吸收峰。确定出5个空穴子带至2个电子子带的跃迁以及这些子带的间距。采用简单带方势阱模型并取参数Q_c=0.6,m_c=0.0665,m_h=0.45和m_l=0.12的计算结果与实验数据符合得相当好。将光吸收谱与光荧光谱进行了比较。

 
<< 更多相关文摘    
图标索引 相关查询

 


 
CNKI小工具
在英文学术搜索中查有关本征吸收峰的内容
在知识搜索中查有关本征吸收峰的内容
在数字搜索中查有关本征吸收峰的内容
在概念知识元中查有关本征吸收峰的内容
在学术趋势中查有关本征吸收峰的内容
 
 

CNKI主页设CNKI翻译助手为主页 | 收藏CNKI翻译助手 | 广告服务 | 英文学术搜索
版权图标  2008 CNKI-中国知网
京ICP证040431号 互联网出版许可证 新出网证(京)字008号
北京市公安局海淀分局 备案号:110 1081725
版权图标 2008中国知网(cnki) 中国学术期刊(光盘版)电子杂志社