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     The MBE grown multilayered structures were incorporated into LW n-on-p,p-on-n as well as SW/MW dual color FPA fabrications,and the preliminary results are presented.
     采用碲镉汞多层材料已试制了长波n-on-p与p-on-n型掺杂异质结器件以及双色红外短波/中波焦平面探测器,本文报道了一些初步结果。
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     The paper introduces the research of GaInP2/GaAs tandem cells, emphases the study of GaInP2 top cells by using effect-aided numerical modeling.
     本文报道了作者近两年来对p-on-n型GaInP_2/GaAs叠层电池的研究结果,重点介绍利用场助收集模型对GaInP_2顶电池进行的模拟研究工作和取得的实验结果。
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     (2)C shape;
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Some results on molecular-beam epitaxial growth of HgCdTe focusing on the requirements by the 3~(rd)generation of infrared focal plane arrays are described,and the growth of HgCdTe on GaAs and Si wafers,surface defects as well as p-type doping are addressed.A good composition uniformity was observed over 3-in HgCdTe wafers,the deviation in x was 0.5%.The twins induced by the large lattice mismatch could be depressed by a proper procedure of low temperature nucleation.A typical value of FWHM of(422) x-ray diffraction...

Some results on molecular-beam epitaxial growth of HgCdTe focusing on the requirements by the 3~(rd)generation of infrared focal plane arrays are described,and the growth of HgCdTe on GaAs and Si wafers,surface defects as well as p-type doping are addressed.A good composition uniformity was observed over 3-in HgCdTe wafers,the deviation in x was 0.5%.The twins induced by the large lattice mismatch could be depressed by a proper procedure of low temperature nucleation.A typical value of FWHM of(422) x-ray diffraction was found to be 60~80 arc·sec for epilayers grown on GaAs and Si.The averaged density of surface defects of larger than 2μm for 3-in HgCdTe epilayers was obtained to be less than 300 cm~(-2).It was found that the surface sticking coefficient of arsenic during HgCdTe growth was very low and sensitive with temperature,being only about 1×10~(-4) at 170℃.The doped arsenic could be activated into acceptors by a proper condition of thermal annealing.The MBE grown multilayered structures were incorporated into LW n-on-p,p-on-n as well as SW/MW dual color FPA fabrications,and the preliminary results are presented.

文章叙述了第三代红外焦平面中所需求的碲镉汞分子束外延(MBE)的一些研究成果。对GaAs、Si基大面积异质外延、表面缺陷抑制、p型掺杂等MBE的主要难点问题进行了阐述。研究表明,3 in材料的组分均匀性良好,组分x的偏差为0.5%。晶格失配引发的孪晶缺陷可以通过合适的低温成核方法得到有效的抑制。在GaAs和Si衬底上外延的HgCdTe材料的(422)x射线衍射半峰宽(FWHM)的典型值为60~80arc.sec。大于2μm缺陷的表面密度可以控制在小于300cm-2水平。研究发现As的表面黏附系数很低,对生长温度十分敏感,在170℃下约为1×10-4。通过合适的退火,可以实现As的受主激活。采用碲镉汞多层材料已试制了长波n-on-p与p-on-n型掺杂异质结器件以及双色红外短波/中波焦平面探测器,本文报道了一些初步结果。

>=The paper introduces the research of GaInP2/GaAs tandem cells, emphases the study of GaInP2 top cells by using effect-aided numerical modeling. The modeling reveals the main factors impacting the photovoltaic performances of GaInP2 top cells. Then p+- p--n--n+ structure of GaInP2 top cell was applied. The cells were produced by low pressure MOVPE technique. The photovoltaic performances of cells with p+- p--n--n+ structure increased obviously. The efficiency of GaInP2/GaAs tandem cells is up to 23. 78% (AM0,...

>=The paper introduces the research of GaInP2/GaAs tandem cells, emphases the study of GaInP2 top cells by using effect-aided numerical modeling. The modeling reveals the main factors impacting the photovoltaic performances of GaInP2 top cells. Then p+- p--n--n+ structure of GaInP2 top cell was applied. The cells were produced by low pressure MOVPE technique. The photovoltaic performances of cells with p+- p--n--n+ structure increased obviously. The efficiency of GaInP2/GaAs tandem cells is up to 23. 78% (AM0, 2cm×2cm, 25℃).

本文报道了作者近两年来对p-on-n型GaInP_2/GaAs叠层电池的研究结果,重点介绍利用场助收集模型对GaInP_2顶电池进行的模拟研究工作和取得的实验结果。根据模拟分析,找到了影响GaInP_2顶电池光伏性能的主要因素,提出了p~+-p~--n~--n~+型的GaInP_2顶电池结构,采用MOVPE技术制备了电池样品。实验结果证明,p~+-p~--n~-n~+结构的GaInP_2顶电池的光伏性能和采用这种结构的GaInP_2/GaAs叠层电池的光伏性能都得到显著改善,叠层电池的效率达到了23.78%(AM0,2cm×2cm,25℃)。

 
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