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迁移率     
相关语句
  mobility
    A Study on the Modeling of AlGaN/GaN High Electron Mobility Transistors
    AlGaN/GaN高电子迁移率晶体管的模型研究
短句来源
    Measurements of Electron Drift Mobility in GD a-Si:H
    GD非晶硅电子迁移率的测量
短句来源
    Measurement Method on Mobility in the MOS Inversion Layers
    MOS反型层中迁移率的测试技术
短句来源
    HALL MOBILITY OF ZnS_x Se_(1-x) SINGLE CRYSTALS
    ZnS_x Se_(1-x)单晶的霍尔迁移率
短句来源
    The Conductivity and Hall Mobility of Te doped InSb-NiSb Eutectic Composite
    掺Te的InSb-NiSb共晶复合材料的电导率和霍耳迁移率
短句来源
更多       
  mobility of
    HALL MOBILITY OF ZnS_x Se_(1-x) SINGLE CRYSTALS
    ZnS_x Se_(1-x)单晶的霍尔迁移率
短句来源
    The Conductivity and Hall Mobility of Te doped InSb-NiSb Eutectic Composite
    掺Te的InSb-NiSb共晶复合材料的电导率和霍耳迁移率
短句来源
    Dependence of Electron Mobility of HEMT on Parameters of Device
    HEMT电子迁移率与器件参数关系
短句来源
    Study on the Mobility of Ternary Alloy In_0.53Ga_0.47As
    三元合金In_(0.53)Ga_(0.47)As迁移率的研究
短句来源
    Mobility of Holes in CoMnNiO Amorphous Film Deposited by R. F. Sputtering
    射频溅射CoMnNiO非晶薄膜中空穴的迁移率
短句来源
更多       
  hall mobility
    HALL MOBILITY OF ZnS_x Se_(1-x) SINGLE CRYSTALS
    ZnS_x Se_(1-x)单晶的霍尔迁移率
短句来源
    The Conductivity and Hall Mobility of Te doped InSb-NiSb Eutectic Composite
    掺Te的InSb-NiSb共晶复合材料的电导率和霍耳迁移率
短句来源
    Effect of Bias Voltage on Carrier Concentration and Hall Mobility in ITO Films
    偏压对溅射ITO膜载流子浓度和迁移率的影响
短句来源
    Contactless Measurement of Minority Carrier Diffusion Length and Hall Mobility of GaAs and Al_xGa_(1-x)As Epitaxial Layer
    GaAs、Al_xGa_(1-x)As外延层少子扩散长度及霍耳迁移率的无接触测
短句来源
    Contactless Measurement of Magnetoresistance and Calculating Method of the Hall Mobility for SiO x ,Si/Si 1- x Ge x
    SiO_x、Si/Si_(1-x)Ge_x的横向磁阻和迁移率的无接触测量
短句来源
更多       
  electron mobility
    A Study on the Modeling of AlGaN/GaN High Electron Mobility Transistors
    AlGaN/GaN高电子迁移率晶体管的模型研究
短句来源
    Dependence of Electron Mobility of HEMT on Parameters of Device
    HEMT电子迁移率与器件参数关系
短句来源
    Recent situation about applications and development of high electron mobility transistors
    高电子迁移率管(HEMT)的应用及研制近况
短句来源
    GaAs/AIGaAs Microwave High Electron Mobility Transistor
    微波GaAs/AlGaAs高电子迁移率晶体管
短句来源
    Development of Ka-Band High Electron Mobility Transistor
    Ka波段高电子迁移率晶体管的研制
短句来源
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  mobility
This is our first report on the high performance 1 mm AlGaN/GaN high electron mobility transistor (HEMT) which was developed using home-made AlGaN/GaN epitaxy structures based on SiC substrate.
      
According to current research, experiences and the lessons learned from applications, the five key performances of a search and rescue robot are survivability, mobility, sensing, communicability and operability.
      
The contradiction between mobility and load-bearing ability is analyzed, and the problem of self-adaptation to the curved face is solved using differential-driven wheeled locomotion with ferromagnetic adhesive devices.
      
The dispersibility and electrophoretic mobility of these particles in tetrachloroethylene (TCE) have been investigated by laser particle size analyzer, static sedimentation and electrophoretic instrument.
      
The dispersibility and electrophoretic mobility have been significantly improved, which means that the modified TiO2 is suitable for electrophoretic ink particles.
      
更多          
  mobility of
The dispersibility and electrophoretic mobility of these particles in tetrachloroethylene (TCE) have been investigated by laser particle size analyzer, static sedimentation and electrophoretic instrument.
      
Data of IR spectroscopy demonstrated that binding to cornstarch polysaccharides decreased the conformational mobility of odorants.
      
A relationship has been revealed between haplotypes of these genes and the mobility of anionic peroxidase isoforms.
      
Since the haplotypes of AtPrx53 gene code for proteins with two nonconservative amino acid substitutions, different mobility of anionic peroxidase isoforms could be due to diallelic polymorphism in the amino acid sequence of AtPrx53 protein.
      
The lowest pH and redox potential (RP) as well as the highest increase in the mobility of the elements was observed after soil incubation with glucose at 100% FC.
      
更多          
  hall mobility
It is determined that the films deposited on (0001)-oriented sapphire have a carrier concentration of 7.5 × 1018 cm-3 and a Hall mobility of 18.4 cm2/(V s).
      
It was established that the Hall mobility remains constant near Tc.
      
The magnetic field component normal to the plane was used to measure the Hall mobility and density.
      
It is found that the measured Hall mobility as a function of the ejecting magnetic field has a distinct maximum.
      
The temperature dependence of the Hall mobility reflects the competition between impurity and lattice mechanisms of hole scattering.
      
更多          
  electron mobility
This is our first report on the high performance 1 mm AlGaN/GaN high electron mobility transistor (HEMT) which was developed using home-made AlGaN/GaN epitaxy structures based on SiC substrate.
      
Under the same conditions for combustion products seeded with KNa eutectic, we have σel ≈ 9 S/m, σelν2 ≈ 65 (S/m)(km/s)2, and electron mobility of 0.09 T-1.
      
The possibilities of the spectroscope are demonstrated by studies of the semiconductor structures used to manufacture high electron mobility transistors and high-power semiconductor lasers.
      
The mean electron mobility in the top silicon layer was found to be 450-600 cm2/?(V s).
      
Electron mobility is evaluated by Hall-effect measurements for different quantum-well thicknesses.
      
更多          
  其他


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本文从晶体管饱和状态下的载流子分布与外部电流的关系出发,分析了合金管饱和区的直流特性;结果说明,在同样的集电极与基极电流比值下,在大电流情况的饱和压降将比小电流情况大一倍以上,这说明了Moll的饱和压降表达式在大电流情况误差大至一倍的原因。分析的结果,不论在小电流或大电流情况均与实验测量结果符合很好。分析结果说明了Miller所提出的测量发射极串联电阻的方法所测得的结果,对合金管来说,实际上不是发射极串联电阻,而主要是基极层纵向电阻和少子与多子迁移率比值的乘积,还包括基极层横向电阻的影响。分析结果还说明,对合金管从降低饱和压降的观点来说,集电极面积的多余部分(即集电极与基极重迭部分),在保持足够的电流放大系数下,应尽可能地减小。 最后对台面类型的晶体管在饱和状态下的特性也进行了计算,并与实测结果作了比较。计算结果可以用来分析台面类型晶体管饱和压降各有关因素的贡献,同时也可用来准确地测量集电极串联电阻等有关参数。

A study of the low temperature epitaxy process for GaAs has been made together with evaluation of the quality of the epitaxial layers obtained. The surface morphology, growth rate, residual impurity level, electronic mobility deep impurity level and carrier concentration profile for low temperature epitaxy are discussed and compared with those for high temperature epitaxy. The results indicate that the low temperature epitaxy process is an acceptable method for the preparation of device quality GaAs layers.

本文研究了GaAs低温气相外延过程和评价了外延层的质量。对低温外延时的表面形貌,生长速率,剩余杂质浓度,电子迁移率,深能级杂质和纵向浓度分布进行了讨论,并与高温外延进行了比较。结果表明,低温外延是制备较高质量外延层的一种可取方法。

This article is to report the results of study of the properties of the amorphous silicon film (GD-aSiHx) prepared by the glow discharge technique by measuring it electrical conductivity and photoconductivity. The experimental results indicate that the GD-aSiHx material prepared has obvious photoconductive effect. Under illumination, its electrical conductivity increases by 2 orders of magnitude. From the absorption and spectral response curve of the GD-aSiHx, the mobility gap Eg of 1.65 eV is obtained. Strong...

This article is to report the results of study of the properties of the amorphous silicon film (GD-aSiHx) prepared by the glow discharge technique by measuring it electrical conductivity and photoconductivity. The experimental results indicate that the GD-aSiHx material prepared has obvious photoconductive effect. Under illumination, its electrical conductivity increases by 2 orders of magnitude. From the absorption and spectral response curve of the GD-aSiHx, the mobility gap Eg of 1.65 eV is obtained. Strong photoresponse is found near Eg 1.65 eV, weak response is found at localized states between 1.65 eV and 0.75 eV and below 0.75 eV no response. These evidences show that the GD-aSiHx prepared is a weak n-type semiconductor. The relation of the photoconductivity versus light intensity shows that dimolecular recombining process plays a dominate role, when the photogenerated carriers move towards the Ec.High and low temperature electrical conductivity and photoconductivity are also measured. Under low temperature condition, the electrical conductivity of GD-aSiHx decreases as temperature decreases, and is a function of the reciprocal of the temperature. The curve may be devi-ded into three regions: activated,(with the activated energy about 0.66-0.73 eV) weakly activated and non-activated processes. Under high temperature condition, the electrical conductivity increases while the temperature increases. The relation of the temperature and the conductivity is non-linear. This fact indicates that electronic transfer within GD-aSiHx is brought about by the hopping transport mechanism. Photoconductivity can be demonstrated by the RD/RI. value. (RD: the dark resistivity, RL: the light resistivity).At low temperature, when T = 293-193 K, (RD/RL)L·T· (RD/RL)R·T·≈10, when T<193 K, RD/RLdecrease progressively until RD equal to RL. At high temperature, the RD/RL value decreases as the temperature increases. When temperature is higher than 373 K, RD≈RL.

本文报道了通过电导和光电导的测量,了解用硅烷辉光放电工艺制备非晶态硅薄膜(简称GD-aSiHx)的基本特性。试验结果指出,我们制备的GD-aSiHx本征薄膜具有显著的光电导效应,光照下可使其电导率增加两个数量级。从吸收系数和光谱灵敏度曲线得到GD-aSiHx的迁移率隙Eg为1.65eV。在Eg1.65eV处有强光响应,而在定域态1.65—0.75eV之间有弱光响应,低于0.75eV无光响应,足见我们制备的GD-aSiHx为弱n型半导体。发现光生载流子移向Ec时,双分子复合作用占主导地位。所进行的低温和高温电导和光电导测试结果表明,GD-aSiHx的低温电导随温度下降而降低,并与温度倒数1/T呈函数关系。电导由激活过程逐渐变为非激活过程,激活能为0.66—0.73eV。高温电导曲线表明电导随温度升高而增大,但电导与温度呈非线性关系,说明GD-aSiHx的电子传导是通过跃迁输运的。对低温下光电导用R_D/R_L表示时(R_D是暗阻,R_L是光阻),当T=293-193K,(R_D/R_L)低温:(R_D/R_L)室温≈10;T<193K,R_D≈R_L;高温下光电导R_D/R_L随温度升高而降低;当T...

本文报道了通过电导和光电导的测量,了解用硅烷辉光放电工艺制备非晶态硅薄膜(简称GD-aSiHx)的基本特性。试验结果指出,我们制备的GD-aSiHx本征薄膜具有显著的光电导效应,光照下可使其电导率增加两个数量级。从吸收系数和光谱灵敏度曲线得到GD-aSiHx的迁移率隙Eg为1.65eV。在Eg1.65eV处有强光响应,而在定域态1.65—0.75eV之间有弱光响应,低于0.75eV无光响应,足见我们制备的GD-aSiHx为弱n型半导体。发现光生载流子移向Ec时,双分子复合作用占主导地位。所进行的低温和高温电导和光电导测试结果表明,GD-aSiHx的低温电导随温度下降而降低,并与温度倒数1/T呈函数关系。电导由激活过程逐渐变为非激活过程,激活能为0.66—0.73eV。高温电导曲线表明电导随温度升高而增大,但电导与温度呈非线性关系,说明GD-aSiHx的电子传导是通过跃迁输运的。对低温下光电导用R_D/R_L表示时(R_D是暗阻,R_L是光阻),当T=293-193K,(R_D/R_L)低温:(R_D/R_L)室温≈10;T<193K,R_D≈R_L;高温下光电导R_D/R_L随温度升高而降低;当T>373K时,R_D≈R_L。

 
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