By analyzing microstructure, orientation and surface roughness, optimum processing parameters are gained as following:Substrate temperature ranging from 700 to 750℃, sputtering power ranging from 100 to 150(×2)w, sputtering pressure being 14Pa, Po2:PAr being about 1:2, CeO2 thin film thickness ranging from 10 to 40Pa.
The influence of the Sb thin film thickness on the readout signal was investigated, the results showed that the optimum Sb thin film thickness is 28～30 nm, and the maximum signal-noise ratio is 38～40 dB.
In this paper, by analyzing the relations between the thickness of film and the ratiosof X-ray diffraction intensity from each component of the composite polycrystalline thinfilms of Cu/Ag,Ag/Al and Al/Cu, it is shown that there is a linear relationship betweenthe thickness and the intensity ratios.
In the paper, polyethylene is used for the resin matrix of thermal infraredcamouflage coating and the effects of type, pigment, antioxidant, thickness of film on the emissivity are deeply analyzed. The mechanics performance, fluidity, aging are pilot studied.
In the optoelectronic detection of thin-film thickness monitoring control system, based on the characteristics of quar-optical path, an idea of dual-lock-phase detection to faint signal is proposed, the multi-stage amplifier and the dual-lock-phase amplifier are developed.
Integrating the modified variance analysis,uncertainty analysis,standard deviation and relative deviation with linear regression analysis,the stability in monitoring thin-film thickness are evaluated with six indexes showing different requirements. In addition,the control precision of thin-film thickness and variation of characteristic wavelength are analyzed.
Experimental results on measurements of thin film thickness are presented.
On the other hand, the enthalpy change approaches that of the bulk value as the thin film thickness increases just beyond the low nanometer regime.
At the same time, at micron or sub-micron scale, another effect, which is referred to as the geometrical size effects such as crystal grain size effect, thin film thickness effect, etc., also influences the measured material hardness.
The dependence of the relative intensityk on the thin film thickness has been measured.
A data processing method is presented making it possible to determine thin film thickness from GDOS depth profiles.
The thickness of film was measured to be approximately 30?±?10?nm.
In our result we can choose proper parameter in order to let the thickness of film tend to zero and have it approach the surface of horizon.
The technical solutions for controlling the thickness of film and fibre materials when the object measured exhibits transverse mechanical oscillations are reported.
Then via the improved brick-wall method, membrane model, we obtain that we can choose proper parameter in order to let the thickness of film tend to zero and have it approach the surface of its horizon.
Effect of thickness of film of fuel on the rate of heterogeneous (gas-film) detonation
The results show that there is a significant enhancement on the pressure field in the presence of viscoelasticity when the minimum thin-film thickness is sufficiently small.
Electron probe microanalysis (EPMA) measurement of thin-film thickness in the nanometre range
In particular, this approach improves substantially the thin-film thickness measurements and analysis accuracy.
In the second configuration one of the mirrors is replaced by SiO2 thin film on the silicon wafer and the recorded channelled spectrum is fitted to the theoretical one to determine the thin-film thickness.
We determine the thin-film thickness for four samples provided that the optical constants for all the materials involved in the experiment are known.