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自组织生长     
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  self-organized growth
     Self-organized growth of sub-monolayer Ge on Si(111)-(7×7)
     在Si(111)-(7×7)表面自组织生长二维Ge团簇超晶格
短句来源
     Self-Organized Growth of InAs Quantum Dots on GaAs (100)
     GaAs(100)衬底上自组织生长InAs量子点的研究
短句来源
     When etching weakly and distorted amorphous Si Si,C C and Si H bonding by high H 2 plasma the differential etch function of H plasma to nanocrystalline SiC and amorphous SiC makes the nanocrystalline SiC self-organized growth, hence the nc SiC films were crystallized.
     采用高H2 等离子体刻蚀弱的、扭曲的、非晶Si-C及Si-Si和Si-H等键时 ,由于H等离子体对纳米SiC晶粒与非晶态键的差异刻蚀作用 ,产生自组织生长 ,发生晶化。
短句来源
     Self-organized growth of sub-monolayer Ge on Si(111)-(7×7) surface has been investigated using ultra-high vacuum scanning tunneling microscopy (UHV-STM).
     利用超高真空扫描隧道显微镜研究了室温条件下亚单层Ge在Si(111) (7× 7)表面上的自组织生长 .
短句来源
     1. The prepared methods of ZnO self-organized growth were studied by details. Concentration of precursor was 0.5 Mol/L, temperature and holding times were 120℃(2 hours) and 185℃(6 hours) respectively . Under this condition ,regular ZnO microtubes were prepared.
     1.研究了自组织生长ZnO微米管的制备工艺,认为以前驱物浓度为0.5Mol/L,温度为120℃保温2小时,185℃保温6小时的条件下能够制备出形貌规则的ZnO微米管。
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  self organized growth
     Self Organized Growth of Semiconductor Quantum Dots and its Applications
     半导体量子点的自组织生长及其应用
短句来源
     This paper introduces ultimate principles of self organized growth on semiconductor quantum dots, self organized growth machnism on various quantum dots, optical properties and its applications in photoelectronic devices.
     本文主要介绍了纳米量子点的自组织生长自组织生长量子点的发光特性及其在光电器件中的应用。
短句来源
     The result of self organized growth of Ge quantum dots on Si substrate by Very Low Pressure Chemical Vapor Deposition (VLP CVD) is reported. The size distribution and density of Ge quantum dots have different dependences on the growth temperature compared with the results obtained by MBE. These phenomena could be ascribed to the effect of the surface controlled reaction by VLP CVD.
     对利用超低压化学气相淀积 (VLP CVD)技术在Si上自组织生长Ge量子点的特征进行了研究 ,发现生长温度对Ge量子点尺寸分布和密度的影响不同于分子束外延 (MBE)的结果 ,这种现象与VLP CVD表面控制反应模式有关。
短句来源
     This paper introduces ultimate principles of self organized growth of nanometer quantum dots, self organized growth mechanism of various quantum dots, and their photoluminescence properties.
     文中主要介绍了量子点自组织生长的基本原理、几种不同类型量子点的自组织生长及其光致发光特性。
短句来源
     The self organized growth nanometer quantum dots are spontaneous quantum dot structures formed by Stranki Krastanov growth mode. In general, the formed nanometer quantum dots are lattice mismatched systems with substrate material, and they have certain size , shape and density.
     所谓自组织生长纳米量子点 ,是具有较大晶格失配度的两种材料 ,依靠自身的应变能量 ,并以 Stranki- Krastanov(S- K)生长模式 ,在衬底表面上形成的具有一定形状、尺寸和密度的自然量子点结构。
短句来源
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  self-assembled growth
     Self-assembled growth of Ge quantum dots on Si(111)-(7×7) surface
     Si(111)-(7×7)表面上Ge量子点的自组织生长
短句来源
     Self-assembled growth of Ge quantum dots on the Si(111)-(7×7) surface has been investigated by using scanning tunneling microscopy (STM).
     用扫描隧道显微镜研究了Si(111) (7× 7)表面上Ge量子点的自组织生长 .
短句来源
     Si nanoquantum dots have been formed by self-assembled growth on the both Si— O—Si and Si—OH bonds terminated SiO 2 surfaces using the low-pressure chemic al vapor deposition (LPCVD) and surface thermal decomposition of pure SiH 4 gas .
     采用低压化学汽相沉积 (LPCVD)方法 ,依靠纯SiH4 气体分子的表面热分解反应 ,在由Si—O—Si键和由Si—OH键终端的两种SiO2 表面上 ,自组织生长了Si纳米量子点 .
短句来源
     Progress of Study on Nanometer Semiconductor Quantum Dots by Self-Assembled Growth
     自组织生长纳米半导体量子点的研究进展
短句来源
     The effects of pre-deposition of boron with different B 2 H 6 flux on the self-assembled growth of Ge islands on Si (100)substrate by UHV/CVD are studied by atomic force microscopy(AFM).
     研究了以不同B2H6流量预淀积硼对UHV/CVD自组织生长Ge量子点尺寸分布的影响。
短句来源
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  self assembling growth
     Recently, as a main fabricatting method of nanoquantum dots, self assembling growth has received wide attention.
     作为纳米量子点的一种主要制备工艺 ,自组织生长技术正在受到人们的普遍重视。
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  self-organized growth
Self-organized growth mechanism for porous aluminum anodic oxide
      
A Raman scattering method is used to investigate structures containing nanosize GaAs and AlAs clusters, which were grown by molecular-beam epitaxy on InAs substrates by the mechanism of self-organized growth under mechanical stress.
      
Upon exceeding the critical thickness, the self-organized growth of InAs quantum dots (QDs) set in.
      
Coherent InAs islands separated by GaAs spacer (d) layers are shown to exhibit self-organized growth along the vertical direction.
      
Self-organized growth of pyramidal clusters in epitaxial spinel CoCr2O4 films on rock salt MgO(001) substrates
      
更多          
  self-assembled growth
recently carried out self-assembled growth of epitaxial sub-10?nm erbium disilicide (C32, hP3) nanowires on Si(001).
      
Self-assembled growth of C60 nanowhiskers on anodic porous alumina membranes
      
It is revealed that the surface stress of the alumina membrane with a highly ordered nanopore arrangement due to thermal treatment is responsible for self-assembled growth of the observed C60 nanowhiskers.
      
Self-assembled growth of nanostructural Ge islands on bromine-passivated Si(111) surfaces at room temperature
      
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