When etching weakly and distorted amorphous Si Si,C C and Si H bonding by high H 2 plasma the differential etch function of H plasma to nanocrystalline SiC and amorphous SiC makes the nanocrystalline SiC self-organized growth, hence the nc SiC films were crystallized.
1. The prepared methods of ZnO self-organized growth were studied by details. Concentration of precursor was 0.5 Mol/L, temperature and holding times were 120℃(2 hours) and 185℃(6 hours) respectively . Under this condition ,regular ZnO microtubes were prepared.
This paper introduces ultimate principles of self organized growth on semiconductor quantum dots, self organized growth machnism on various quantum dots, optical properties and its applications in photoelectronic devices.
The result of self organized growth of Ge quantum dots on Si substrate by Very Low Pressure Chemical Vapor Deposition (VLP CVD) is reported. The size distribution and density of Ge quantum dots have different dependences on the growth temperature compared with the results obtained by MBE. These phenomena could be ascribed to the effect of the surface controlled reaction by VLP CVD.
The self organized growth nanometer quantum dots are spontaneous quantum dot structures formed by Stranki Krastanov growth mode. In general, the formed nanometer quantum dots are lattice mismatched systems with substrate material, and they have certain size , shape and density.
Si nanoquantum dots have been formed by self-assembled growth on the both Si— O—Si and Si—OH bonds terminated SiO 2 surfaces using the low-pressure chemic al vapor deposition (LPCVD) and surface thermal decomposition of pure SiH 4 gas .
Self-organized growth mechanism for porous aluminum anodic oxide
A Raman scattering method is used to investigate structures containing nanosize GaAs and AlAs clusters, which were grown by molecular-beam epitaxy on InAs substrates by the mechanism of self-organized growth under mechanical stress.
Upon exceeding the critical thickness, the self-organized growth of InAs quantum dots (QDs) set in.
Coherent InAs islands separated by GaAs spacer (d) layers are shown to exhibit self-organized growth along the vertical direction.
Self-organized growth of pyramidal clusters in epitaxial spinel CoCr2O4 films on rock salt MgO(001) substrates
recently carried out self-assembled growth of epitaxial sub-10?nm erbium disilicide (C32, hP3) nanowires on Si(001).
Self-assembled growth of C60 nanowhiskers on anodic porous alumina membranes
It is revealed that the surface stress of the alumina membrane with a highly ordered nanopore arrangement due to thermal treatment is responsible for self-assembled growth of the observed C60 nanowhiskers.
Self-assembled growth of nanostructural Ge islands on bromine-passivated Si(111) surfaces at room temperature