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   纳米氮化硼 的翻译结果: 查询用时:0.008秒
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纳米氮化硼
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  “纳米氮化硼”译为未确定词的双语例句
     This article presents the preparation and properties of BN/carbon nano-tubes (CNTs) contained Al-based alloys, the preparation of nano BN is also involved.
     本文系统研究了纳米氮化硼(BN)、碳纳米管(CNTs)增强铝基耐磨、减摩复合材料的制备及性能,并研究了纳米BN的制备方法。
短句来源
     By developing the spV tight-binding model, we study the band spectrum feature of the cagelike structure such as carbon clusters, carbon nanotubes, BN nanotubes in this thesis.
     本论文发展sp~3s~*紧束缚模型,着重研究笼状纳米结构如碳巴基球、碳纳米管、纳米氮化硼管的能谱特征。
短句来源
     Then we used boron nitride as additive of lube after surface modification.
     将合成的纳米氮化硼材料进行了表面改性,然后作为润滑油添加剂,并用该润滑油进行了摩擦磨损实验研究。
短句来源
     Boron nitride (BN) nanometer thin films are synthesized on Si (100) substrates by RF reactive magnetron sputtering. The surfaces of BN films are treated by hydrogen and oxygen plasma respectively and studied by Fourier transform infrared spectra (FTIR), atomic force microscopic (AFM) and field emission characteristics. The results show that the surface NEA of the films increased, the threshold field reduced and the emission current increased due to hydrogen plasma treatment.
     用RF磁控溅射的方法在Si(100)基底上沉积了纳米氮化硼薄膜,然后分别用氢、氧等离子体对薄膜表面进行了处理,用红外光谱、原子力显微镜、光电子能谱以及场发射试验对薄膜进行了研究,结果表明氢等离子体使BN薄膜表面NEA增加,阈值电场降低,发射电流明显增大.
  相似匹配句对
     Study on the Nanomaterial Synthesized and Application of Boron Nitride
     纳米材料合成及氮化硼的应用研究
短句来源
     Growth of Net-Shaped Boron Nitride Nanorods
     网络状氮化硼纳米棒的生长研究
短句来源
     Nano-foam plastics
     纳米泡沫塑料
短句来源
     Nano Scale Electronics Technology
     纳米电子技术
短句来源
     Improvement on Process Technology of BN,an EP Anti-wear Additive
     氮化硼生产工艺的改进
短句来源
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Nanometer boron nitride(BN) thin films with various thickness(54~124 nm) were fixed on the (100)oriented surface of nSi(ρ=0008~002 Ω·m) by r.f. magnetic sputtering physical vapor deposition(PVD). There are only two absorption peaks of the hexagonalBN(hBN) at about 1 380 cm-1 and 780 cm-1 in the FTIR spectra of the BN thin films. The field emission characteristics of the thin BN films were measured in a super high vacuum system. It was found that the field emission characteristics of the thin BN...

Nanometer boron nitride(BN) thin films with various thickness(54~124 nm) were fixed on the (100)oriented surface of nSi(ρ=0008~002 Ω·m) by r.f. magnetic sputtering physical vapor deposition(PVD). There are only two absorption peaks of the hexagonalBN(hBN) at about 1 380 cm-1 and 780 cm-1 in the FTIR spectra of the BN thin films. The field emission characteristics of the thin BN films were measured in a super high vacuum system. It was found that the field emission characteristics of the thin BN films depend evidently on the thickness of the films. A turnon electric field as low as 10 V/μm is obtained for the ~54 nmthick BN film, and the emission current density is estimated to be higher 240 μA/cm2 at an electric field of 23 V/μm. It is shown by FN curves that the electrons emitted from BN penetrate through the potential barrier at the surface of the BN thin film to vacuum tunneling under the exterior electric field action.

利用射频磁控溅射方法,在n型(100)Si基底上沉积了不同厚度(54~124nm)的纳米氮化硼(BN)薄膜.红外光谱分析表明,BN薄膜结构为六角BN(h-BN)相(1380cm-1和780cm-1)结构.在超高真空系统中测量了不同膜厚的场发射特性,发现阈值电压随着厚度的增加而增大.厚度为54nm的BN薄膜样品阈值电场为10V/μm,当外加电场为23V/μm时,最高发射电流为240μA/cm2.BN薄膜场发射F-N曲线表明,在外加电场作用下,电子隧穿了BN薄膜表面势垒发射到真空.

Nanometer Boron Nitride(BN) thin films with various thickness(54~135nm) were prepared on the (100)oriented surface of nSi(0.008~0.02Ω·m) by r.f. magnetic sputtering physical vapor deposition(PVD). There were only two absorption peaks of hBN at about 1 380 cm-1 and 780 cm-1 by Fourier transform infrared spectra for the BN thin films. The field emission characteristics of thin BN films were measured in a super high vacuum system. It is found that the field emission characteristics of thin BN films...

Nanometer Boron Nitride(BN) thin films with various thickness(54~135nm) were prepared on the (100)oriented surface of nSi(0.008~0.02Ω·m) by r.f. magnetic sputtering physical vapor deposition(PVD). There were only two absorption peaks of hBN at about 1 380 cm-1 and 780 cm-1 by Fourier transform infrared spectra for the BN thin films. The field emission characteristics of thin BN films were measured in a super high vacuum system. It is found that the field emission characteristics of thin BN films depends evidently on the thickness of the films. The threshold voltage increases with the increase of the thickness in nanometer thickness range. This is attributed to the work function difference between BN thin film and Si substrate. Electrons are transferred from substrate Si to conduction band of BN thin film, and are emitted from BN to vacuum tunneling through the potential barrier at the surface of the BN thin film under exterior electric field action. 

利用射频磁控溅射方法,在n型(100)Si基底上沉积了不同厚度(54~135nm)的纳米氮化硼(BN)薄膜。红外光谱分析表明,BN薄膜结构为六角BN(h BN)相(1380cm-1和780cm-1)。在超高真空系统中测量了不同膜厚BN薄膜的场发射特性,发现BN薄膜的场发射特性与膜厚关系很大,阈值电场随着厚度的增加而增大。由于BN薄膜和Si基底界面间存在功函数差,使得Si基底中电子转移到BN薄膜的导带,在外电场作用下隧穿BN表面势垒,发射到真空。

>=Boron nitride (BN) nanometer thin films are synthesized on Si (100) substrates by RF reactive magnetron sputtering. Then the film surfaces are treated in the case of the base pressure below 5×10-4Pa and the temperature of 800℃ and 1000℃ respectively. And the films are studied by fourier transform infrared spectra (FTIR), atomic force microscopic (AFM) and field emission characteristics at different annealing temperature. The results show that the surface heat treatment makes no apparent influence on the surface...

>=Boron nitride (BN) nanometer thin films are synthesized on Si (100) substrates by RF reactive magnetron sputtering. Then the film surfaces are treated in the case of the base pressure below 5×10-4Pa and the temperature of 800℃ and 1000℃ respectively. And the films are studied by fourier transform infrared spectra (FTIR), atomic force microscopic (AFM) and field emission characteristics at different annealing temperature. The results show that the surface heat treatment makes no apparent influence on the surface morpho!ogy of the BN films. The transformations of the sample emission characteristics have to do with the surface negative electron affinity (NEA) of the films possibly. The threshold electric fields are lower for BN samples without heat-treating than the treated films, which possibly ascribed to the surface negative electron affinity effect. A threshold field of 8V/μm and the emission current of 80μA are obtained. The surface NEA is stili presence at the heat treatment temperature of 800℃ and disappeared at temperature of 1000℃.

用RF磁控溅射的方法在最佳沉积条件下在Si(100)基底上沉积了纳米氮化硼薄膜,然后对薄膜在真空度低于5×10-4pa、温度分别为800℃和1000℃条件下进行了表面热处理,分别用红外光谱、原子力显微镜以及不同退火温度的场发射试验对薄膜进行了研究,结果表明表面热处理对BN薄膜的表面形貌没有明显影响,样品场发射特性的变化可能与表面负电子亲和势有关,未进行热处理的样品阚值电场较低,可能归因子表面负电子亲和势效应,阈值电场为8V/μm,发射电流为80μA,热处理温度为800℃时,负电子亲和势仍然存在,直到热处理温度达到1000℃时,表面负电子亲和势才消失.

 
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