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等离子体效应
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  plasma effect
     Plasma effect on the Kα group emission of He-like neon
     等离子体效应对类氦氖Kα线系电偶极辐射的影响
短句来源
     Influence of Plasma Effect on Energy Level of H-Like Ion C~(5+)
     等离子体效应对碳的类氢离子能级的影响
短句来源
     This paper deals with the physical mechanism f laser molten welding of L135 cemented carbides and high speed steel, the structure changes of both materials and welding quality affected by plasma effect. The welding result of heterogenous materials which proved good in our experiment is also discussed.
     通过对L135硬质合金与高速钢激光熔焊物理机理的探讨,研究了焊后两种材料的结构变化,等离子体效应对焊接质量的影响,给出良好冶金结合的异种材料焊接结果。
短句来源
  plasma effects
     The plasma effects induced by high power microwave
     高功率微波激励的等离子体效应的概述
短句来源
     By detailed theoretical analysis of character of high energy ion implantation and optical response of free-carrier plasma effects, electrical activaton of implanted boron ions has been investigated by computer simulation of the IR reflection interference spectra.
     通过分析高能离子注入体系和自由载流子等离子体效应的光学响应,应用计算机模拟红外反射谱,获得了载流子分布,迁移率和高能注入离子的电激活率。
短句来源
  “等离子体效应”译为未确定词的双语例句
     The Restoration of Symmetry and Plasmon Effects at High Temperature and High Density in The Weinberg-Salam Model
     高温高密下W-S模型的对称性恢复和等离子体效应
短句来源
     A novel formula to estimate the plasma density effects on the energy levels of H-like ions from Z=6 to 30
     估算等离子体效应对类氢离子束缚态能级能量影响的新公式(英文)
短句来源
     Themeasurements show that the simulated LEO plasma environment in the vacuum chamber isuniform and stable.
     对这个模拟环境测试的结果表明得到在模拟环境中的等离子体参数的分布是比较均匀、稳定的,在此环境中进行等离子体效应模拟实验研究是能够反映实际过程的。
短句来源
     Considering the transfer process of carriers and the plasmic effect, we derived a formula of calculating time response function to heavy charged particles in PIN semiconductor detectors. The method of determining the parameters in the formula was also discussed.
     本文中,在考虑载流子输运过程和等离子体效应条件下,导出了PIN半导体探测器对重带电粒子时间响应函数的计算公式,讨论了确定计算公式中参数的方法。
短句来源
     The sterilizing effects of the decontamination machine with the test place of common office is studied.
     以普通办公室作为试验场所,利用净化器中静电除尘器正电极产生的等离子体效应,激发光触媒的光催化作用,通过空气过滤器有效地结合静电除尘器和光催化技术,并加入等离子体效应
短句来源
  相似匹配句对
     METALLURGICAL EFFECT OF NON EQUILIBRIUM PLASMA
     非平衡态等离子体的冶金效应
短句来源
     An elementary analysis of characteristics of plasma and applications
     等离子体的振荡及流体效应的解释
短句来源
     Dusty plasmas
     尘埃等离子体
短句来源
     Gravitational Lens Effect
     引力透镜效应
短句来源
     PLASMA ECHO
     等离子体回波
短句来源
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  plasma effect
The plasma effect is taken care of by using a screened Coulomb potential obtained from the Debye model.
      
A theory using a cone model as the shock wave generator is presented to explain the observed plasma effect on shock wave.
      
The measurements also show that the plasma effect on the shock structure lasts much longer than the discharge period.
      
With only 20% Ar in He, a strong quenching of the He plasma by Ar occurs, and the Ar plasma effect is dominant.
      
A plasma effect in injection-mode selection of TEA CO2 lasers
      
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  plasma effects
General kinetic equations are derived for nuclear reactions in dense plasmas by taking into account first-order collective plasma effects.
      
Plasma effects in magnetoabsorption of D- centers in quantum wells
      
In addressing the issue of collective plasma effects on the thermonuclear reaction rates, the first critical overview of most of the work carried out so far is presented and the validity of the test particle approach is assessed.
      
Optical properties of doped bismuth telluride crystals in the region of plasma effects
      
Electromagnetic and plasma effects during a carrier rocket flight
      
更多          


Considering the transfer process of carriers and the plasmic effect, we derived a formula of calculating time response function to heavy charged particles in PIN semiconductor detectors. The method of determining the parameters in the formula was also discussed.

本文中,在考虑载流子输运过程和等离子体效应条件下,导出了PIN半导体探测器对重带电粒子时间响应函数的计算公式,讨论了确定计算公式中参数的方法。

Abstract Arsenic ions have been implanted into Si at an incident energy of 3MeV or 5MeV to a dose of 1×1016cm-2.Buried conductive layers are formed in Si substrate after annealing at 1050℃ for 20s.Infrared (IR) reflection spectra in the wavenumber range of 500-4000cm-1 were measured and interference fringes related to free-carrier plasma effects are observed. By detailed theoretical analysis and computer simulation of the IR reflection interference spectra, the depth profile of the carrier density,the carrier...

Abstract Arsenic ions have been implanted into Si at an incident energy of 3MeV or 5MeV to a dose of 1×1016cm-2.Buried conductive layers are formed in Si substrate after annealing at 1050℃ for 20s.Infrared (IR) reflection spectra in the wavenumber range of 500-4000cm-1 were measured and interference fringes related to free-carrier plasma effects are observed. By detailed theoretical analysis and computer simulation of the IR reflection interference spectra, the depth profile of the carrier density,the carrier mobility near maximum carrier density, and the carrier activation efficiency were obtained.The physical interpretation of the results and a critical discussion of the sensitivity of data fitted to the variation in parameters are given.

将能量分别为3MeV或5MeV,剂量为1×1016cm-2的砷离于注入<100>硅单晶,经1050℃,20s退火形成导电埋层.本文分析高能离子注入体系和自由载流子等离子体效应的光学5向应.在500─4000cm-1波数范围的红外反射谱中观测到由自由载流子等离子体效应所致的干涉现象.应用计算机模拟红外反射谱获得了导电埋层中的载流子分布,迁移率和高能注入离子的电激活率.

This paper deals with the physical mechanism f laser molten welding of L135 cemented carbides and high speed steel, the structure changes of both materials and welding quality affected by plasma effect. The welding result of heterogenous materials which proved good in our experiment is also discussed.

通过对L135硬质合金与高速钢激光熔焊物理机理的探讨,研究了焊后两种材料的结构变化,等离子体效应对焊接质量的影响,给出良好冶金结合的异种材料焊接结果。

 
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