热氮化      thermal nitridation(14) thermal nitrided(12) rapid thermal nitridation(9) thermal nitride(1)   thermal nitridation      Study on Nitrogen Distribution and Nitrided Mechanism for Ultrathin Nitrided SiO_2 by Rapid Thermal Nitridation      快速热氮化超薄SiO_2膜的氮分布和氮化机理的研究 短句来源      The Si SiO x N y Al capacitors are fabricated on both <100>and <111> oriented Si by Rapid Thermal Nitridation (RTN)10nm SiO 2 films with a tungsten halogen lamp as radiation source heating.      用卤素钨灯作辐射热源快速热氮化 (RTN) 10 nm Si O2 膜 ,制备了〈10 0〉和〈111〉晶向 Si衬底上的 Si- Si Ox Ny-Al电容结构 . 短句来源      SiO_xN_y ultra thin films were grown by thermal nitridation with NiO and NH_3 used as the react gas respectively.      本工作采用热氮化和热退火工艺,分别在N_2O和NH_3气氛中制备了薄至几个纳米的SiO_xN_y薄膜。 短句来源      A STUDY ON THE NITROGEN DIFFUSION IN THE THERMAL NITRIDATION SiO_2 FILM WITH AUGER ES      用俄歇能谱研究热氮化SiO_2膜中氮原子的扩散 短句来源      By the rapid thermal nitridation (RTN) of ultra thin (10 nm) SiO 2 films, the ultra thin SiO x N y dielectric films had been prepared with tungsten halogen lamp as radiation source, and the Al/n Si/SiO x N y /Al capacitors had been fabricated too.      用卤素钨灯作辐射热源 ,对超薄 (1 0nm )SiO2 膜进行快速热氮化 (RTN) ,制备了SiOxNy 超薄栅介质膜 ,并制作了Al/n Si/SiOxNy/Al结构电容样品 . 短句来源 更多          thermal nitrided      Electron Tunneling from the 〈100〉 and 〈111〉 Oriented Si into the Ultrathin Rapid Thermal Nitrided SiO_2 Films      电子从〈100〉和〈111〉晶向硅隧穿超薄快速热氮化SiO_2 膜(英文) 短句来源      BREAKDOWN CHARACTERISTICS OF RAPID THERMAL NITRIDED SiO_2 FILM OF 150 THICKNESS      150快速热氮化SiO_2膜的击穿特性 短句来源      Study of Trap Characteristics of Rapid Thermal Nitrided SiO_2 Film      快速热氮化SiO_2膜陷阱特性的研究 短句来源      Interface Nitridation Model of the Rapid Thermal Nitrided SiO_2 Film      快速热氮化SiO_xN_y薄膜界面氮化反应模型 短句来源      The Current Enhancement of the Tunneling Rapid Thermal Nitrided SiO_2 Films from Different Oriented Si and the Model Explaination      电子从不同晶向Si隧穿快速热氮化SiO_2膜的电流增强及模型解释 短句来源 更多          rapid thermal nitridation      Study on Nitrogen Distribution and Nitrided Mechanism for Ultrathin Nitrided SiO_2 by Rapid Thermal Nitridation      快速热氮化超薄SiO_2膜的氮分布和氮化机理的研究 短句来源      The Si SiO x N y Al capacitors are fabricated on both <100>and <111> oriented Si by Rapid Thermal Nitridation (RTN)10nm SiO 2 films with a tungsten halogen lamp as radiation source heating.      用卤素钨灯作辐射热源快速热氮化 (RTN) 10 nm Si O2 膜 ,制备了〈10 0〉和〈111〉晶向 Si衬底上的 Si- Si Ox Ny-Al电容结构 . 短句来源      By the rapid thermal nitridation (RTN) of ultra thin (10 nm) SiO 2 films, the ultra thin SiO x N y dielectric films had been prepared with tungsten halogen lamp as radiation source, and the Al/n Si/SiO x N y /Al capacitors had been fabricated too.      用卤素钨灯作辐射热源 ,对超薄 (1 0nm )SiO2 膜进行快速热氮化 (RTN) ,制备了SiOxNy 超薄栅介质膜 ,并制作了Al/n Si/SiOxNy/Al结构电容样品 . 短句来源      IMPROVEMENT OF GATE-OXIDE BREAKDOWN IN N-MOSFET'S USING RAPID THERMAL NITRIDATION      快速热氮化改善n-MOSFET栅氧化层的加速击穿 短句来源      The thermal-grow ultrathin (4 ～23nm) SiO2 was put in the rapid thermal processing (RTP) system in which there are tungstem--halogen lamps as thermal radiation sources system and the ultrathin SiO. N, films have been preparaed by rapid thermal nitridation (RTN) processing.      将热生长的超薄（4～23nm）SiO2置于用卤素钨灯作辐射热源的快速热工艺（RTP）系统中，用快速热氮化（RTN）工艺制备了超薄的SiOxNy膜。 短句来源 更多          thermal nitride      Charge Characteristics and Optical Properties of Rapid Thermal Nitride SiO_xN_y Thin Dielectric Film      快速热氮化SiO_xN_y薄介质膜的电荷特性与光学性质 短句来源     查询“热氮化”译词为其他词的双语例句   查询“热氮化”译词为用户自定义的双语例句     我想查看译文中含有：的双语例句 为了更好的帮助您理解掌握查询词或其译词在地道英语中的实际用法，我们为您准备了出自英文原文的大量英语例句，供您参考。   thermal nitridation Influence of Gas-Thermal Nitridation of Optical Lead Silicate Glass on Its Surface Properties 例句来源       It is shown that thermal nitridation of the surface layers of the glass samples at a temperature of 375-495°C and a pressure of 0.1-1.0 MPa for 1-20 h brings about the breaking of the Si-O-Si bonds and the formation of the Si-N-Si and Si-N bonds. 例句来源       The degree of structural transformation in the surface layer depends on the conditions of thermal nitridation and on the chemical composition of the glass. 例句来源       Rapid thermal nitridation of SiO2 (96 ?) has been performed at three different temperatures: 1150°, 1200°, and 1250°C for a nitridation time up to 150 s. 例句来源       Effect of additives on the thermal nitridation of sol-gel derived silica gel 例句来源       更多             thermal nitrided For enhanced radiation hardness and impurity masking capability as well as higher permittivity, rapid thermal nitrided oxides may be a potential choice deserving further evaluation. 例句来源         rapid thermal nitridation Rapid thermal nitridation of SiO2 (96 ?) has been performed at three different temperatures: 1150°, 1200°, and 1250°C for a nitridation time up to 150 s. 例句来源       The rapid thermal nitridation of titanium films used as diffusion barriers between aluminum and silicon, has a major impact on shallow junction complementary metal oxide semiconductor technologies. 例句来源       During the process of rapid thermal nitridation, the dopants in the junctions undergo a redistribution and affect the electrical properties of shallow junction structures. 例句来源       没有找到相关文摘     相关查询: 碳热氮化 快速热氮化 碳热还原氮化 热— 氮化 碳热还原———氮化 热 碳热还原—氮化反应 碳热还原氮化反应 碳热还原-氮化 微波碳热还原氮化 酸热  对查询结果不满意

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