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  silicon migration
Silicon migration during MBE growth of doped (A1, Ga)As films
      
Silicon migration during MBE growth of (Al, Ga)As and (Al, Ga)As/GaAs or AlAs/GaAs superlattices has been studied by electrochemical C-V and secondary ion mass spectrometry (SIMS) concentration-depth profiling.
      
On the basis of C-V, SIMS and TEM data we propose that silicon migration occurs as the result of a concentration-dependent diffusion process.
      
We observe that nitrogen implantation, along with the production of titanium nitride, induces silicon migration into the film.
      
Defects in the tungsten barrier were found to result in silicon migration to the front surface and gold migration toward the substrate at temperatures between 550°C-700°C .
      
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The starting material for the preparation of ultrastable zeolites was type-Y zeolite produced in Lanzhou Refinery, Lanzhou, Gansu, China. The effects of preparation conditions on the stability of products obtained were studied. It was found that the degree of crystallinity of the products decreased with the increase of treatment pressure; the Bronsted and Lewis acidity of them decreased with the increase of treatment temperature; the thermal stability of them was poor at treatment temperature below 500℃, but...

The starting material for the preparation of ultrastable zeolites was type-Y zeolite produced in Lanzhou Refinery, Lanzhou, Gansu, China. The effects of preparation conditions on the stability of products obtained were studied. It was found that the degree of crystallinity of the products decreased with the increase of treatment pressure; the Bronsted and Lewis acidity of them decreased with the increase of treatment temperature; the thermal stability of them was poor at treatment temperature below 500℃, but good at treattment temperature ranging from 600 to 650℃, and got worse and worse when reatment temperature increased beyond 650℃. For the purpose of in sight into the framework changes, an infrared spectroscopic study was also carried out.

用兰州炼油厂生产的NaY沸石为原料,制备超稳沸石。研究了稳定化过程的水蒸汽、压力和温度的影响。超稳沸石结晶度随压力增加而降低。处理温度升高时,质子酸和非质子酸都下降。在500℃以下处理时,热稳定性很差。600-650℃处理时,热稳定性和氨稳定性都较好。再提高温度,则结晶度下降,热稳定性和氨稳定性也变差。还研究了不同温度下处理样品的红外光谱,发现在较高温度下处理时,3600Cm~(-1)强度降低。超稳沸石、NaY和HY沸石300-1200Cm~(-1)的骨架振动光谱表明,从NaY到HY的硅铝比没有变化,而超稳沸石由于骨架脱铝和硅迁移,骨架振动谱带向高频移动。

The various etching reactions and depositing reactions for SiCl_4-H_2 epitaxial system have been studied by thermodynamical method.The results obtained may be useful in understanding the migration effect of silicon in the epitaxial growth.

本文用热力学方法研究了SiCl_4-H_2外延系统中的各种腐蚀反应和沉积反应。所得结果可以用于认识硅外延生长过程中的硅迁移效应。

According to the practice of blast furnaces in recent years, the slag action in the process of silicon transmission should not be ignored anyway. The effcts of the sinter and slag basicity, hot metal temperature, theoretical combustion temperature in the raceway and the coal injection rate on silicon content are seperately discussed. A quantitative method for claculating silicon content with relation to factors mentioned above is introduced.

根据近几年高炉的实践证明:任何情况下都不能忽视炉渣在硅迁移过程中的作用。讨论了烧结矿碱度、炉渣碱度、铁水温度、理论燃烧温度与喷煤量对控制生铁含硅量的不同作用。提出了与上连因素有关的生铁含硅量的定量计算。

 
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