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   硅迁移 在 农业基础科学 分类中 的翻译结果: 查询用时:1.487秒
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硅迁移    
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  silicon migration
Silicon migration during MBE growth of doped (A1, Ga)As films
      
Silicon migration during MBE growth of (Al, Ga)As and (Al, Ga)As/GaAs or AlAs/GaAs superlattices has been studied by electrochemical C-V and secondary ion mass spectrometry (SIMS) concentration-depth profiling.
      
On the basis of C-V, SIMS and TEM data we propose that silicon migration occurs as the result of a concentration-dependent diffusion process.
      
We observe that nitrogen implantation, along with the production of titanium nitride, induces silicon migration into the film.
      
Defects in the tungsten barrier were found to result in silicon migration to the front surface and gold migration toward the substrate at temperatures between 550°C-700°C .
      
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  silicon migration
Silicon migration during MBE growth of doped (A1, Ga)As films
      
Silicon migration during MBE growth of (Al, Ga)As and (Al, Ga)As/GaAs or AlAs/GaAs superlattices has been studied by electrochemical C-V and secondary ion mass spectrometry (SIMS) concentration-depth profiling.
      
On the basis of C-V, SIMS and TEM data we propose that silicon migration occurs as the result of a concentration-dependent diffusion process.
      
We observe that nitrogen implantation, along with the production of titanium nitride, induces silicon migration into the film.
      
Defects in the tungsten barrier were found to result in silicon migration to the front surface and gold migration toward the substrate at temperatures between 550°C-700°C .
      
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According to model of element removing in red earth forming process, removing intensity value (px) in mountain red earth process and formational ages of the mountain red earthes in various elevation belts have been calculated in the north part of Yunnan province 9 China.

根据红壤成土过程中的元素迁移模型,本文初步求解了云南北部山原红壤成土过程中的硅迁移强度值(Px),并对不同海拔高程上的山原红壤发育年龄进行了计算。

 
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