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可控晶化
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     Its quality can be controlled.
     质量可控
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     The quality is controllable;
     质量可控
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     Salt:the movie
     盐粒的晶化
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     crystallization time,6 hours.
     晶化时间,6 h.
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  controlled crystallization
The ratios of the components at which the properties of the fluxes satisfy the requirements for controlled crystallization of these incongruently melting compounds are determined.
      
The nanocrystalline phase is formed upon controlled crystallization of the amorphous alloy prepared by quenching of the melt on a rapidly moving substrate.
      
The structure and chemical composition of the phases that form in the controlled crystallization of a bulk amorphous Fe72Al5P10Ga2C6B4Si1 alloy are studied by differential scanning calorimetry, transmission electron microscopy, and x-ray diffraction.
      
The structure forming under controlled crystallization of a bulk Fe72Al5P10Ga2C6B4Si1 amorphous alloy has been studied using differential scanning calorimetry, transmission electron microscopy, and x-ray diffraction.
      
Practicable methods for the preparation of polymeric nanostructures by controlled crystallization, microphase and nanophase separation of components, and their dispersion, as well as the formation of interfaces, are discussed.
      
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The method of laser_induced crystallization combining with the phase-shifting grating mask (PSGM) was carried out to fabricate nanocrystal silicon (nc-Si) with the two-dimensional (2D) patterned distribution within a-SiN_x/a-Si:H/a-SiN_x sandwiched structure grown on the SiO_2/Si or fused quartz substrate by plasma-enhanced chemical vapor deposition technique. The thicknesses of a-Si:H and a-SiN_x layer are 10 and 50?nm, respectively. The results of atomic force microscopy, cross-section transmission electron...

The method of laser_induced crystallization combining with the phase-shifting grating mask (PSGM) was carried out to fabricate nanocrystal silicon (nc-Si) with the two-dimensional (2D) patterned distribution within a-SiN_x/a-Si:H/a-SiN_x sandwiched structure grown on the SiO_2/Si or fused quartz substrate by plasma-enhanced chemical vapor deposition technique. The thicknesses of a-Si:H and a-SiN_x layer are 10 and 50?nm, respectively. The results of atomic force microscopy, cross-section transmission electron microscopy and high resolution transmission electron microscopy show that the controllable crystallized regions within the initial a-Si:H layer are selectively formed with a diameter of about 250 nm and are patterned with the same 2D periodicity of 2.0 μm as that of the PSGM. Si nano-crystallites,the size of which is almost the same as the thickness of the a-Si:H layer, are formed in the crystallized regions, and have <111> preferred orientation.

利用结合移相光栅掩模(PSGM)的激光结晶技术在超薄a-SiNx/a-Si:H/a-SiNx三明治结构样品中制备出二维有序分布的纳米硅阵列.原始样品是用等离子体增强化学气相淀积法生长.a-Si:H层厚为10nm,a-SiNx为50nm,衬底材料为SiO2/Si或熔凝石英.原子力显微镜、剖面透射电子显微镜、高分辨透射电子显微镜对样品表面形貌和微结构的观测结果表明,采用该方法可以在原始淀积的a-Si:H层中得到位置可控的晶化区域:每个晶化区域直径约250nm,具有同PSGM一致的2μm周期;晶化区域内形成的纳米硅颗粒尺寸接近原始淀积的a-Si:H层厚,且晶粒的择优取向为<111>.

 
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