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金刚石形核及生长
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  相似匹配句对
     NUCLEATION AND GROWTH OF CVD DIAMOND
     CVD金刚石形核生长
短句来源
     Research of the Diamond Film Nucleation
     金刚石薄膜的形核研究
短句来源
     GRADATIONAL GROWTH OF DIAMOND THIN FILMS
     金刚石薄膜的分层生长
短句来源
     The gas-Phase Epitaxial Growth of Diamond Film
     金刚石薄膜气相外延生长
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     Studies of Nucleation of Diamond Films Grown by Chemical Vapor Deposition
     CVD金刚石形核的研究
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  diamond nucleation and growth
Experiments at 6.0-7.1 GPa and 1500-1700°C were carried out to explore the boundary conditions of diamond nucleation and growth in pyrrhotite-carbon melt-solutions.
      
Mechanisms of CVD diamond nucleation and growth on mechanically scratched Si(100) surfaces
      
The presence of various hydrocarbon species in the plasma and their reaction with atomic, excited or molecular hydrogen on the substrate surface decide the mechanism of diamond nucleation and growth.
      
Effect of deposition conditions on diamond nucleation and growth.
      
In this effort, static magnetic fields in excess of 15 T are observed to direct these carbon and metal intermediary microstates to promote nano-diamond nucleation and growth at atmospheric pressure and temperature of 900°C.
      
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Effect of Mo and Nb platings on diamond nucleation and growth in YG6 cemented carbide substrate is investigated. The experimental results show that Mo plating in the thickness of 3000A can promote diamond nucleation but Nb plating of the same thickness can not do it. However. these platings do not affect the morphology characteristics of diamond deposited on YG6 substrate.

研究了Mo、Nb镀层对YG6基体上金刚石形核及生长的影响。结果表明。厚度3000的Mo镀层促进了金刚石形核,而Nb镀层的存在却不利于金刚石形核。但是,两种镀层均不改变金刚石晶粒的形貌待征。

Transition-layers. were discovered ty TEM between diamondfiltns and substrates andthey offer favorable conditions for nucleating and growing of diamond films. In order toimprove the adhesion strength of diamond films with substrates, TiC, TiCN films weredeposited on the Mo-substrates as transition4ayers by various methods.

通过TEM观察发现在金刚石膜与单晶硅片、金刚石膜与A1N陶瓷之间存在一层过渡层,过渡层的存在为金刚石的形核及生长提供了有利的条件,受此启发,为了改善金刚石与基材的结合强度,采用磁控溅射、空心离子镀、真空蒸镀等方法在MO片上沉积TiC、TiCN(C/N=1/2)、TiCN(C/N=1/10)等薄膜,研究了它们对金刚石膜与基材的结合强度的影响.

 
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