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亚微米     
相关语句
  submicron
     A12GHz l.5dB Submicron Gate GaAs MESFET
     12GHz 1.5dB亚微米栅GsAs MESFET
短句来源
     Diffusion bonding mechanism of submicron composite Al_2O_3p /6061Al
     亚微米级Al_2O_3p/6061Al复合材料的扩散焊接
短句来源
     Diffusion welding process of submicron aluminium matrix composite Al_2O_(3p)/6061 Al
     亚微米级Al_2O_(3p)/6061Al铝基复合材料扩散焊接工艺
短句来源
     FRACTURE BEHAVIOR OF 6061Al ALLOY MATRIX COMPOSITES REINFORCED WITH SUBMICRON Al_2O_3 PARTICULATES
     亚微米级Al_2O_(3P)/6061Al复合材料的断裂行为
短句来源
     TENSILE PROPERTIES AND STRENGTHENING MECHANISMS OF LD2 Al ALLOY COMPOSITES REINFORCED WITH SUBMICRON Al_2O_3 PARTICULATES
     亚微米级Al_2O_3颗粒增强LD2铝合金复合材料的拉伸性能与强化机制
短句来源
更多       
  sub-micron
     Preparation of Sub-micron Li_2O-Al_2O_3-SiO_2 Glass-ceramics
     亚微米Li_2O-Al_2O_3-SiO_2微晶玻璃制备
短句来源
     Microstructural of sub-micron Al_2O_3 particles and interfacial characteristic of Al_2O_(3p)/1070Al composites
     亚微米Al_2O_3颗粒的微观结构及Al_2O_(3p)/1070Al复合材料的界面
短句来源
     Aging Behavior of Sub-Micron Al_2O_(3P)/2024Al Composites
     亚微米级Al_2O_(3P)/2024Al复合材料的时效行为
短句来源
     Study on Synthesizing Sub-micronα-ZrW_2O_8 via Sol-gel Method
     溶胶-凝胶法合成亚微米α-ZrW_2O_8的研究
短句来源
     Microstructure and Properties of Sub-micron Al_2O_(3p)/Al Composites after Hot Extrusion
     热挤压对亚微米Al_2O_(3p)/2024Al复合材料组织和性能的影响
短句来源
更多       
  sub micron
     A12GHz l.5dB Submicron Gate GaAs MESFET
     12GHz 1.5dB亚微米栅GsAs MESFET
短句来源
     Diffusion bonding mechanism of submicron composite Al_2O_3p /6061Al
     亚微米级Al_2O_3p/6061Al复合材料的扩散焊接
短句来源
     Diffusion welding process of submicron aluminium matrix composite Al_2O_(3p)/6061 Al
     亚微米级Al_2O_(3p)/6061Al铝基复合材料扩散焊接工艺
短句来源
     FRACTURE BEHAVIOR OF 6061Al ALLOY MATRIX COMPOSITES REINFORCED WITH SUBMICRON Al_2O_3 PARTICULATES
     亚微米级Al_2O_(3P)/6061Al复合材料的断裂行为
短句来源
     TENSILE PROPERTIES AND STRENGTHENING MECHANISMS OF LD2 Al ALLOY COMPOSITES REINFORCED WITH SUBMICRON Al_2O_3 PARTICULATES
     亚微米级Al_2O_3颗粒增强LD2铝合金复合材料的拉伸性能与强化机制
短句来源
更多       
  submicron range
     Optically projected lines with linewidths in micron or submicron range can only be obtained with exactly precise focussing, and this is especially important for UV-exposure projection. For example, the lens used for an exposure wavelength r =404nm and the numerical aperture Na= 0.28 has only the focus depth of ±2.8 micron. The principle of the pneumatic automatic focussing system is described in this paper.
     微米及亚微米的线条用光学法投影时,只有在调焦十分精确的情况下才可能实现,这时对于紫外投影曝光更为重要,例如波长为404nm,孔径为0.28的镜头,焦深仅为±2.8微米,本文介绍的这种气动自动调焦系统其传感器的灵敏度达到每微米25厘米水柱。
短句来源
     Through quantitative calculation of fractal geometry, self-similarity morphological features in the submicron range were found on the surface of both samples. However, their fractal features were very different,the D-value of the former was about 2. 3 , and that of the latter was 2.6~2.7.The difference in the surface structure of the two samples is explained by difference in their condensation process.
     通过分形几何学的定量研究,发现在亚微米尺度铁陨石碎片和铁质宇宙尘的表面结构存在自相似性,但铁质宇宙尘与铁陨石线切割碎片的表面分数维特征却明显不同,前者分数维D值约为2.3,后者D值为2.6~2.7。 这与它们的热动力学过程的差异有关。
短句来源

 

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  submicron
Deep submicron process technology is widely being used and interconnect structures are becoming more and more complex.
      
A novel nano-scale alignment technique based on moiré signal for room-temperature imprint lithography in the submicron realm is proposed.
      
They can meet the requirements of alignment accuracy for submicron imprint lithography.
      
The negative ζ-potential of submicron droplets was so high that it prevented the droplets from coagulating with cells also possessing a high negative ζ-potential.
      
The dominant role of submicron n-alkane droplets in the kinetics of yeast growth could be accounted for by the existence of a mechanism regulating the contact interactions of individual cells with the droplets followed by the uptake of the substrate.
      
更多          
  sub-micron
The validity of these conditions is demonstrated for particles of sub-micron dimension executing orbital motion in the Earth's plasmasphere.
      
Noise estimation for deep sub-micron integrated circuits
      
As process technology scales down to very deep sub-micron (VDSM) in semiconductor manufacturing technology, intrinsic size becomes close to or even shorter than the wavelength used for optical lithography.
      
The wavelength dependence of AOT revealed wide variations in the Junge aerosol size exponent from 0.98 to 6.70 indicating the presence of both sub-micron and coarse-mode aerosol particles over the observational site.
      
It is convincible that the proposed method is well suitable for the characterization of deep sub-micron MOSFET's in the current ULSI technology.
      
更多          
  sub micron
Both scanning electron microscopy and atomic force microscopy (AFM) have shown that calcium oxalate monohydrate kidney stones are made up from arrangements of sub micron crystals.
      
Deep sub micron high aspect ratio polymer structures produced by hard X-ray lithography
      
Finally, a metal mesh with 2 μm thick Au-absorbers and 900 nm hexagonal holes was applied to pattern showpieces of sub micron features using a reduced electron energy of 1.3 GeV.
      
Contractions could be detected with high sub nanometric vertical sensitivity and changed shape dramatically within adjacent sub micron-sized areas.
      
Our results, combining imaging and real time recording in localized areas, reveal a new, non-invasive method for studying sub micron morphological activity in live biological samples.
      
更多          
  submicron range
Thermal stability of the films of polystyrene chemically bound to fullerene C60: Effect of film thickness in the submicron range
      
The thermal stability of polymer films with thicknesses in the submicron range was studied for a composition of polystyrene (PS) chemically bound (grafted) to fullerene C60.
      
It is concluded that this effect is indicative of an excessive film thickness and can serve as a probe for the critical film thickness and its inhomogeneity in a submicron range.
      
The average particle sizes (including NR and compatibilizer) tended to increase with SEBS and PSNR05 content, although the sizes were still in the submicron range.
      
In the submicron range, a correlation between thickness dependencies of residual stress and transformation temperatures is experimentally obtained.
      
更多          
  其他


It has been found that the molecular weight distribution was closely related to the photo-sensitivity, resolution and corrosion resistance of an inner photo-resist. When the molecular weight distribution is narrowed down to its smallest possible range, togetherwith non-homogeneity index (Mw/Mn) around 1. 6 and average polymerisation valueover 2100, photo-resists of high resolution and good corrosion resistivity can be obtained.

我们发现光致抗蚀剂内部分子量的分布与它的感光性,分辨率和抗蚀性有着密切的关系。当分子量分布控制在尽可能小的范围,如非均匀指数(M_w/M_n)为1.6左右,平均聚合度大于2100,就能制得高分辨率和高抗蚀性能的光致抗蚀剂。将工业聚乙烯醇进行一次和二次分级精制,这三种聚乙烯醇分别测其非均匀指数和平均聚合度为:2.0,1750;1.74,1900;1.65,2126。再分别将以上三种聚乙烯醇制成聚乙烯醇肉桂酸酯、测定其性能后得知非均匀指数越小,平均聚合度越大,则抗蚀性和分辨率越高。经过二次分级精制的聚乙烯醇原料制成的聚乙烯醇肉桂酸酯,当膜厚为6000A时,用紫外光或电子束曝光能容易地分别刻蚀出1.5微米或0.5微米的光栅线条。这一研究结果使负性光致抗蚀剂进入亚微米级光刻技术具有实用的价值。正性光致抗蚀剂利用同样的方式也能得到很好的结果。

A fabrication process of sub-micro silicon film used for 4mm IMPATT diode was described and some experimental results were given.

本文叙述了供4 mm雪崩二极管用的亚微米硅外延膜的制备过程。文中给出了若干结果。

In this paper, the major factor which affects the noise of a device is theoretically analysed from the equivalent circuit in which the trap effects at the interface between the GaAs expitaxial layer and the substrate are considered. The noise figure in the range of device design versus the elements of the equivalent circuit, the geometrical structure of the device, the material parameters and the operation frequency are described. The new planar devices using oxygen implantation are developed. Submicron gate...

In this paper, the major factor which affects the noise of a device is theoretically analysed from the equivalent circuit in which the trap effects at the interface between the GaAs expitaxial layer and the substrate are considered. The noise figure in the range of device design versus the elements of the equivalent circuit, the geometrical structure of the device, the material parameters and the operation frequency are described. The new planar devices using oxygen implantation are developed. Submicron gate lengths have been fabricated, by using conventional compensated contact photolithography. The microwave noise of the resulted device is much lower than that of the general mesa device. The noise figure of 3.5dB at 12GHz with associated gain of 5dB have been obtained. S-parameters of 2 to 12GHz are also presented. Mean time to failure of the device have been extrapolated to give 2×107 hours. The application experiments, such as that of oscillator, the mixer and the microwave low-noise amplifier at 2 to 12GHz, have been done, and the primary successful results have been achieved.

本文从考虑了GaAs外延层与衬底的界面陷阱效应的等效电路出发,对影响器件噪声的主要因素进行了理论分析,给出了器件设计范围内的噪声系数与等效电路参数、器件结构参数、材料参数和工作频率的关系曲线。提出了氧离子注入的新型平面器件结构,用普通接触式补偿光刻法制作了亚微米栅条,所得器件比普通台式器件具有更低的微波噪声。在12GHz下,噪声系数为3.5dB,相应的增益为5dB。给出了2~12GHz全套S参数。器件平均工作寿命达2×10~7小时。进行了2~12GHz范围内微波低噪声放大器、混频器和振荡器等应用试验,取得了初步的良好结果。

 
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